One-step digit-set-restricted modified signed-digit adder using an incoherent correlator based on a shared content-addressable memory

An efficient one-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In this technique, carry propagation is avoided by introducing reference digits to restrict the intermediate carry and sum digits to {1,0} and {0,1}, respectively. The proposed technique requires significantly fewer minterms and simplifies system complexity compared to the reported one-step MSD addition techniques. An incoherent correlator based on an optoelectronic shared content-addressable memory processor is suggested to perform the addition operation. In this technique, only one set of minterms needs to be stored, independent of the operand length. (C) 2002 society or Photo-Optical Instrumentation Engineers.

Efficient two-step digit-set-restricted modified signed-digit algorithm based on optoelectronic shared content-addressable memory

A two-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In the proposed addition algorithm, carry propagation is avoided by using reference digits to restrict the intermediate MSD carry and sum digits into {(1) over bar ,0} and {0, 1}, respectively. The algorithm requires only 12 minterms to generate the final results, and no complementarity operations for nonzero outputs are involved, which simplifies the system complexity significantly. An optoelectronic shared content-addressable memory based on an incoherent correlator is used for experimental demonstration. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Efficient two-step digit-set-restricted modified signed-digit algorithm based on optoelectronic shared content-addressable memory

A two-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In the proposed addition algorithm, carry propagation is avoided by using reference digits to restrict the intermediate MSD carry and sum digits into {(1) over bar ,0} and {0, 1}, respectively. The algorithm requires only 12 minterms to generate the final results, and no complementarity operations for nonzero outputs are involved, which simplifies the system complexity significantly. An optoelectronic shared content-addressable memory based on an incoherent correlator is used for experimental demonstration. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

蔷薇类的分子系统学研究—兼论系统发育基因组学的原理和方法(以SET基因超家族为例)

分子系统发育分析的主要任务包括：（1）帮助建立生命之树（tree of life）;（2）追踪基因和基因家族（gene family）的起源和进化, 以获知基因在进化过程中的功能分化和伴随发生的重要分子事件（key molecular events）和形态性状的关键创新（key innovation）。这两个方面在本研究中都有所涉及。对于前者，选用植物线粒体matR基因重建被子植物蔷薇类群的系统发育关系;对于后者，则以SET基因超家族为例，探讨其在真核生物中的进化分类以及与功能多样性的关系。 I 蔷薇类的分子系统学 蔷薇类（rosids）是基于分子数据建立的被子植物的主要分支之一，包含13个目，大约三分之一的被子植物物种。两个主要蔷薇类内部分支是豆类fabids（包含7个目）和锦葵类malvids（包含3个目）。然而，这两个分支内部，以及这两个分支与蔷薇类基部类群，包括牻牛儿苗目（Geraniales）、桃金娘目（Myrtales）和流苏子目（Crossosomatales）之间的关系大多是不清楚的。本研究中，我们选取174个物种来代表72个蔷薇类（rosids）的科，利用两个数据集，即线粒体matR单基因数据集和包括线粒体matR基因、两个质体基因(rbcL、 atpB)和一个核基因(18S rDNA) 的4基因数据集，重建蔷薇类在科以上分类阶元水平的系统发育关系。同时，还对线粒体matR基因的进化特征和用于大尺度系统发育分析的适合度和潜力进行了评价。 线粒体matR单基因数据支持malvids和大多数蔷薇类目的单系性质，然而，豆类（fabids）成员没有形成一个分支，其COM亚支，包括卫矛目（Celastrales）、酢浆草目（Oxalidales）、金虎尾目（Malpighiales）和蒜树科（Huaceae），分辨为锦葵类（malvids）的姐妹群。这个关系在最近根据花结构特征曾被提出过，但从未在之前的分子系统发育分析中得到分辨。4基因数据集支持首先是牻牛儿苗目（Geraniales），接着是桃金娘目（Myrtales）作为蔷薇类（rosids）的最基部的分支;流苏子目（Crossosomatales）是锦葵类（malvids）姐妹群，以及蔷薇类（rosids）的核心部分包括豆类（fabids），锦葵类（malvids）和流苏子目（Crossosomatales）。线粒体matR基因的进化特征分析显示，与两个叶绿体基因(rbcL 和atpB)比较，同义替代速率约是它们的1/4，而非同义替代速率接近于自身的同义替代速率，表明matR 基因具有松弛的选择压力。线粒体matR基因相对慢速的进化使非同源相似（homoplasious）突变减少，提高了系统发育信息的质量，同时，松弛的选择压力使非同义替代数量增加，弥补了慢速进化导致的系统发育信息数量不足的缺陷，这两个方面的结合使线粒体matR基因非常适用于被子植物在科以上水平的系统发育研究。 II SET基因超家族的系统发育基因组学分析 SET基因超家族基因编码含有SET结构域的蛋白，在真核生物中，SET-domain蛋白一般是多结构域（multi-domain）的。SET-domain蛋白具有对组蛋白H3和H4的N末端尾部进行赖氨酸残基甲基化修饰的酶活性;从异染色质形成到基因转录，甲基化的组蛋白广泛影响染色质水平的基因调控。依据SET结构域一级序列的相似性和结构域组织（domain architecture）特征，目前，SET-domain基因超家族被划分为4-7个家族。由于这些划分或者使用动物或者使用植物SET基因，只有少数其它类群的物种加入分析，因此这样的划分可能是不完整的。本研究采用系统发育基 因组学方法（phylogenomic approach），在真核生物范围内广泛取样，期望获得相对完整的SET-domain基因家族的 进化分类方案，在此基础上加深理解SET-domain基因的进化机制和功能多样性。 在提取了17个物种，代表5个真核超群的SET蛋白序列基础上，系统发育分析结合“结构域组织特征”鉴别了9个SET基因家族，其中一个是新的SET基因家族。以前的SET8和Class VI家族,及SMYD和SUV4-20家族分别合并为一个家族。大部分家族在进化过程中发生了2次以上的基因重复事件，通过获得不同的结构域产生具有不同功能的新基因。一个SET基因家族在进化过程中推测发生了从脊椎动物祖先向盘基网柄菌（Dictyostelium discoideum）的水平基因转移。

Effects of rhFSH regimen and time interval on ovarian responses to repeated stimulation cycles in rhesus monkeys during a physiologic breeding season

We studied the effects of repeated stimulation by recombinant human FSH (rhFSH) at various time intervals during a physiologic breeding season in rhesus monkeys. Ovarian recovery and responses were assessed by ultrasonography, serum steroid concentrations

Birth seasonality and interbirth interval of captive Rhinopithecus bieti

This study, which is based on 10 years of birth records, shows that black-and-white snub-nosed monkeys (Rhinopithecus bieti) in captivity display marked birth seasonality. The birth season starts in December and ends in June, with a peak from March to May

东湖生态系统污染状况的FUZZY聚类分析

以水色、透明度、五日生化需氧量、总氮、总磷、悬浮物等感官的和生物学的6个参数为依据,用fuzzy聚类分析方法对武汉东湖生态系统的污染状况进行了分析研究,所获得的结果与实际情况相符。同时也简单地介绍和讨论了用于生态学的fuzzy聚类分析的一般方法。

Smart universal multiple-valued logic gates by transferring single electrons

This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on MOSFET based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the MOSFET based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.

Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.

Study on Closed-set Speaker Identification Based on Biomimetic Pattern Recognition

In this paper, a new classifier of speaker identification has been proposed, which is based on Biomimetic pattern recognition (BPR). Distinguished from traditional speaker recognition methods, such as DWT, HMM, GMM, SVM and so on, the proposed classifier is constructed by some finite sub-space which is reasonable covering of the points in high dimensional space according to distributing characteristic of speech feature points. It has been used in the system of speaker identification. Experiment results show that better effect could be obtained especially with lesser samples. Furthermore, the proposed classifier employs a much simpler modeling structure as compared to the GMM. In addition, the basic idea "cognition" of Biomimetic pattern recognition (BPR) results in no requirement of retraining the old system for enrolling new speakers.

Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor

This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.