Enhanced photocatalytic activity of TiO2 nano-structured thin film with a silver hierarchical configuration

TiO2 sol-gels with various Ag/TiO2 molar ratios from 0 to 0.9% were used to fabricate silver-modified nano-structured TiO2 thin films using a layer-by-layer dip-coating (LLDC) technique. This technique allows obtaining TiO2 nano-structured thin films with a silver hierarchical configuration. The coating of pure TiO2 sol-gel and Ag-modified sol-gel was marked as T and A, respectively. According to the coating order and the nature of the TiO2 sol-gel, four types of the TiO2 thin films were constructed, and marked as AT (bottom layer was Ag modified, surface layer was pure TiO,), TA (bottom layer was pure TiO,, surface layer was Ag modified), TT (pure TiO, thin film) and AA (TiO, thin film was uniformly Ag modified). These thin films were characterized by means of linear sweep voltammetry (LSV), X-ray diffraction (XRD), scanning electron microscopy (SEM), electrochemical impedance spectroscopy and transient photocurrent (I-ph). LSV confirmed the existence of Ago state in the TiO, thin film. SEM and XRD experiments indicated that the sizes of the TiO,, nanoparticles of the resulting films were in the order of TT > AT > TA > AA, suggesting the gradient Ag distribution in the films. The SEM and XRD results also confirmed that Ag had an inhibition effect on the size growth of anatase nanoparticles. Photocatalytic activities of the resulting thin films were also evaluated in the photocatalytic degradation process of methyl orange. The preliminary results demonstrated the sequence of the photocatalytic activity of the resulting films was AT > TA > AA > TT. This suggested that the silver hierarchical configuration can be used to improve the photocatalytic activity of TiO2 thin film.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Weak epitaxy growth and phase behavior of planar phthalocyanines on p-sexiphenyl monolayer film

We systematically investigated the weak epitaxy growth (WEG) behavior of a series of planar phthalocyanine compounds (MPc), i.e., metal-free phthalocyanine (H2PC), nickel phthalocyanine (NiPc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), iron phthalocyanine (FePc); cobalt phthalocyanine (CoPc), grown on a p-sexiphenyl (p-6P) monolayer film by selected area electron diffraction (SAED) and atomic force microscopy (AFM). Two types of epitaxial relations, named as incommensurate epitaxy and commensurate epitaxy, were identified between phthalocyanine compounds and the substrate of the p-6P film.

Electrodeposition of platinum nanoclusters on type I collagen modified electrode and its electrocatalytic activity for methanol oxidation

We firstly reported a novel polymer matrix fabricated by type I collagen and polymers, and this matrix can be used as nanoreactors for electrodepositing platinum nanoclusters (PNCs). The type I collagen film has a significant effect on the growth of PNCs. The size of the platinum nanoparticles could be readily tuned by adjusting deposition time, potential and the concentration of electrolyte, which have been verified by field-emitted scanning electron microscopy (FE-SEM). Furthermore, cyclic voltammetry (CV) has demonstrated that the as-prepared PNCs can catalyze methanol directly with higher activity than that prepared on PSS/PDDA film, and with better tolerance to poisoning than the commercial E-TEK catalyst. The collagen-polymer matrix can be used as a general reactor to electrodeposit other metal nanostructures.

Synthesis, crystal structures and spectroscopic properties of copper(I) complexes containing beta-dialdiminato supporting ligands

Two mononuclear neutral copper(I) complexes, Cu(L-1)PPh3 (1), Cu(L-2)(PPh3)(2) (2) ([L-1](-) = [{N((C6H3Pr2)-Pr-i-2,6)C(H)}(2)CPh](-); [L-2](-) = [{N(C6H5)C(H)}(2)CPh](-)) have been synthesized and structurally characterized by X-ray crystallography. In complex 1, the copper(I) atom is in a distorted three-coordinate trigonal planar environment, whereas in complex 2 with the less sterically hindered beta-dialdiminato ligand, the copper(I) atom is the centre of a four-coordinate distorted tetrahedron. At room temperature complexes 1 and 2 in a film of PMMA exhibit green emission at 543 and 549 nm with lifetimes of 5.28 and 5.32 ns, respectively.

Autophobic Dewetting of a Poly(methyl methacrylate) Thin Film on a Silicon Wafer Treated in Good Solvent Vapor

The wettability of thin poly(methyl methacrylate) (PMMA) films on a silicon wafer with a native oxide layer exposed to solvent vapors is dependent on the solvent properties. In the nonsolvent vapor, the film spread on the substrate with some protrusions generated on the film surface. In the good solvent vapor, dewetting happened. A new interface formed between the anchored PMMA chains and the swollen upper part of the film. Entropy effects caused the upper movable chains to dewet on the anchored chains. The rim instability depended on the surface tension of solvent (i.e., the finger was generated in acetone vapor (gamma(acetone) = 24 mN/m), not in dioxane vapor (gamma(dioxane) = 33 mN/m)). The spacing (lambda) that grew as an exponential function of film thickness h scaled as similar to h(1.31) whereas the mean size (D) of the resulting droplets grew linearly with h.

Suppression of phase separation in PC/PMMA blend film by thermoset oligomer

Phase separation of bisphenol A polycarbonate (PC) and poly(methyl methacrylate) (PMMA) thin blend film is suppressed by addition of solid epoxy oligomer. Epoxy has strong intermolecular interactions with both PC and PMMA, while PC and PMMA are quite incompatible with each other. Consequently, phase separation in the PC/PMMA blend film pushes epoxy to the interface; at the same time, PC and epoxy react readily at the interface to form a cross-linking structure, binding PMMA chains together. Therefore, the interface between PC and PMMA is effectively reinforced, and the PC/PMMA thin blend film is stabilized against phase separation. On the other hand, only an optimal content of epoxy (i.e., 10 wt %) can serve as an efficient interfacial agent. In contrast to the traditional reactive compatibilization, here we observed that the cross-linking structure along the interface is much more stable than block or graft copolymers. Atomic force microscopy (AFM) is used to characterize the morphological changes of the blend films as a function of annealing time. Two-dimensional fast Fourier transform (2D-FFT) of AFM data allows quantitative investigation of the scaling behavior of phase separation kinetics.

Electro-assisted precipitation of electrolytes in poly(3,4-ethylenedioxythiophene) film

The electrolyte, NaBF4, can be enriched into the matrix of poly(3,4-ethylenedioxythiophene) (PEDOT) film during the p-doping potential cycling between 0.6 and -0.9 V. It has been demonstrated that this enrichment is originated from the mixed ion transfer between doping and dedoping, i.e. BF4- anion migrate into the PEDOT film during the oxidation process, the Ne cation insert into the film during the reduction process, and then, the electrolyte is accumulated into the film matrix after the multiple CV cycling. The quantitative analysis of energy-dispersive X-ray spectroscopy (EDX) confirmed the enrichment of NaBF4 in the PEDOT film.

Two- and three-dimensional Au nanoparticle/CoTMPyP self-assembled nanotructured materials: Film structure, tunable electrocatalytic activity, and plasmonic properties

Two- and three-dimensional Au nanoparticle/[tetrakis(N-methylpyridyl)porphyrinato]cobalt (CoTMPyP) nanostructured materials were prepared by "bottom-up" self-assembly. The electrocatalytic and plasmonic properties of the Au nanoparticle/CoTMPyP self-assembled nanostructured materials (abbreviated as Au/CoTMPyP SANMs) are tunable by controlled self-assembly of the An nanoparticles and CoTMPyP on indium tin oxide (ITO) electrode. The electrocatalytic activity of the Au/CoTMPyP SANMs can be tuned in two ways. One way is that citrate-stabilized An nanoparticles are positioned first on ITO surface with tunable number density, and then positively charged CoTMPyP ions are planted selectively on these gold sites. The other way is that An nanoparticles and CoTMPyP are deposited by virtue of layer-by-layer assembly, which can also tune the amount of the as-deposited electrocatalysts. FE-SEM studies showed that three-dimensional SANMs grow in the lateral expansion mode, and thermal annealing resulted in both surface diffusion of nanoparticles and atomic rearrangement to generate larger gold nanostructures with predominant (I 11) facets.

Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography

The dewetting process of thin polystyrene (PS) film with built-in ordered disturbance by capillary force lithography (CFL) has. been investigated in situ by AFM. Two different phenomena are observed depending on the excess surface energy (DeltaF(gamma)) of the system. When DeltaF(gamma) is less than a certain critical value (i.e., the disturbance amplitude is under a critical value), the PS film would be flattened and become stable finally by heating above T-g. While, if the size of the disturbance amplitude is larger than the critical value, ordered PS liquid droplets form by further dewetting. The pattern formation mechanisms and influencing factors have been discussed in detail.

Fabrication and luminescent properties of rare earths-doped Gd-2(WO4)(3) thin film phosphors by Pechini sol-gel process

Rare earth ions (Eu3+ and Dy3+)-doped Gd-2(WO4)(3) phosphor films were prepared by a Pechini sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting powders and films. The results of XRD indicate that the films begin to crystallize at 600degreesC and the crystallinity increases with the elevation of annealing temperatures. The film is uniform and crack-free, WO(4)(2-)mainly consists of closely packed fine particles with an average grain size of 80 nm. Owing to an energy transfer from 4 groups, the rare earth ions show their characteristic emissions in crystalline Gd-2(WO4)(3) phosphor films, i.e., D-5(J) -F-7(J), (J = 0, 1, 2, 3; J' = 0 1, 2, 3, 4, not in all cases) transitions for Eu3+ and F-4(9/2)-H-6(J) (J = 13/2, 15/2) transitions for D Y3+, with the hypersensitive transitions D-5(0)-F-7(2) (Eu3+) and F-4(9/2) - H-6(13/2) (Dy3+) being the most prominent groups, respectively.

Highly efficient green phosphorescent organic light-emitting diodes based on Cu-I complexes

Mononuclear Cu-I complexes with mixed ligands are used to fabricate green phosphorescent organic light-emitting diodes. The electroluminescence (EL) maximum at 524 nm coincides well with its photoluminescent (PL) spectrum in poly(methyl methacrylate) film (see Figure). A maximum current efficiency of 10.5 cd A(-1) at 105 cd m(-2) and a maximum brightness up to 1663 cd m(-2) are