Mode properties of off-axis one-sided hybrid resonator for novel high average power dual-slab laser

A novel dual-slab laser with off-axis one-sided hybrid resonator is presented. The mode properties of the hybrid resonator are calculated using a fast Fourier transform method (FFT). The influence of wavefront distoration on the output beam quality is considered. Results indicate that the novel dual-slab laser is better than the normal dual-slab laser with off-axis one-sided hybrid resonator.

Dual-wavelength competitive output in Nd:Y3Sc1.5Al3.5O12 ceramic disk laser

In this paper, we demonstrated a dual-wavelength competitive output in Nd:Y3SC1.5Al3.5O12 ceramic disk laser. Different dual-wavelength output behaviors for Nd:YSAG and Nd:YAG ceramic disk laser were investigated and discussed. By applying the energy transfer model, we suggested the reasonable explanation for this new phenomenon as the disordered replacing of Al3+ ions by Sc3+ ions. The main advantage of the dual-wavelength ceramic laser is the possibility to serve as the seed source to generate Terahertz radiation. (C) 2008 Elsevier B.V. All rights reserved.

Study on eight-pass dual-frequency laser interferometer with nanometer precision

A new dual-frequency laser displacement measurement interferometer with nanometer precision has been developed. An eight-pass optical subdivision technology is proposed to improve resolution based on commercial interferometers. A static positioning error measuring method has been used to examine the precision and repeatability of the laser interferometer. An optical resolution of 1.24 nm and an accuracy of nanometer scale have been achieved.

Modelling and simulation of the second-order Doppler error of a laser dual-frequency interferometer

Only the first- order Doppler frequency shift is considered in current laser dual- frequency interferometers; however; the second- order Doppler frequency shift should be considered when the measurement corner cube ( MCC) moves at high velocity or variable velocity because it can cause considerable error. The influence of the second- order Doppler frequency shift on interferometer error is studied in this paper, and a model of the second- order Doppler error is put forward. Moreover, the model has been simulated with both high velocity and variable velocity motion. The simulated results show that the second- order Doppler error is proportional to the velocity of the MCC when it moves with uniform motion and the measured displacement is certain. When the MCC moves with variable motion, the second- order Doppler error concerns not only velocity but also acceleration. When muzzle velocity is zero the second- order Doppler error caused by an acceleration of 0.6g can be up to 2.5 nm in 0.4 s, which is not negligible in nanometric measurement. Moreover, when the muzzle velocity is nonzero, the accelerated motion may result in a greater error and decelerated motion may result in a smaller error.

A novel optical subdivision method for dual-frequency interferometer

The theory of optical subdivision techniques of dual-frequency laser interferometers is stated. And a novel optical subdivision technique is proposed originally to enhance resolution of a commercial interferometer by adding some corner-cubes. Then the performance of the interferometer is tested. The interferometer resolution of 1.24 nm and the average error of below 2 nm are achieved by using the technique. The most novel of the optical subdivision technique is without lambda/4 plates. It is less sensitive to environmental changes, it has prodigious potential to improve resolution farther and it can reduce polarization mixing error. (C) 2007 Elsevier GmbH. All rights reserved.

Isolation, expression and characterization of a novel dual serine protease inhibitor, OH-TCI, from king cobra venom

Snake venom Kunitz/BPTI members are good tools for understanding of structure-functional relationship between serine proteases and their inhibitors. A novel dual Kunitz/BPTI serine proteinase inhibitor named OH-TCI (trypsin- and chymotrypsin-dual inhibito

Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

1.55-mu m ridge DFB laser integrated with a buried-ridge-stripe dual-core spot-size converter by quantum-well intermixing

A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size converter operating at 1.55 mu m was successfully fabricated by means of low-energy ion implantation quantum-well intermixing and dual-core technologies. The passive waveguide was optically combined with a laterally exponentially tapered active core to control the mode size. The devices emit in a single transverse and single longitudinal mode with a sidemode suppression ratio of 38.0 dB. The threshold current was 25 mA. The beam divergence angles in the horizontal and vertical directions were as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.0-dB coupling loss with a cleaved single-mode optical fiber.

Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

A 1.60-mu m laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3x10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Society of Photo-optical Instrumentation Engineers.