Theoretical study of determining orientation and alignment of symmetric top molecule using laser-induced fluorescence

General expressions used for extracting the orientation and alignment parameters of a symmetric top molecule from laser-induced fluorescence (LIF) intensity are derived by employing the density matrix approach. The molecular orientation and alignment are described by molecular state multipoles. Excitation and detection are circularly and linearly polarized lights, respectively. In general cases, the LIF intensity is a complex function of the initial molecular state multipoles, the dynamic factors and the excitation-detection geometrical factors. It contains a population, ten orientation and fourteen alignment multipoles. The problem of how to extract the initial molecular state multipoles from the resolved LIF intensity is discussed.

Theory for determining alignment parameters of symmetric top molecule using (n+1) LIF

Expressions used for extracting the population and alignment parameters of a symmetric top molecule from (n + 1) laser-induced fluorescence (LIF) are derived by employing the tensor density matrix method. The molecular population and alignment are described by molecular state multipoles. The LIF intensity is a complex function of the initial molecular state multipoles, the dynamic factors, and the excitation-detection geometrical factors. The problem of how to extract the initial molecular state multipoles from (2 + 1) LIF, as an example, is discussed in detail. (C) 2000 American Institute of Physics. [S0021-9606(00)30744-9].

Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich SiO2 matrix is reported. The PL spectra consist of three Gaussian bands (peaks A,B, and C), originated from the quantum confinement effect of Si NCs, the interface state effect between a Si NC and a SiO2 matrix, and the localized state transitions of amorphous Si clusters, respectively. The size and the surface chemistry of Si NCs are two major factors affecting the transition of the dominant PL origin from the quantum confinement effect to the interface state recombination. The larger the size of Si NCs and the higher the interface state density (in particular, Si = O bonds), the more beneficial for the interface state recombination process to surpass the quantum confinement process, in good agreement with Qin's prediction in Qin and Li [Phys. Rev. B 68, 85309 (2003)]. The realistic model of Si NCs embedded in a SiO2 matrix provides a firm theoretical support to explain the transition trend.

Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 American Institute of Physics.

Size evolution and optical properties of self-assembled InAs quantum dots on different matrix

InAs quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. High density of 1.02 x 10(11) cm(-2) of InAs islands on In0.15Ga0.85As and In0.15Al0.85As underlying layer has been achieved. Atomic force microscopy and photoluminescence spectra show the size evolution of InAs islands on In0.15Ga0.85As underlying layer. A strong 1.3 mum photoluminescence from InAs islands on In0.15Ga0.85As underlying layer and with InGaAs strain-reduced layer has been obtained. Single-mirror light emitting diode structures with InAs quantum dots capped by InGaAs grown on InGaAs layer as active layer were fabricated and the corresponding radiative efficiency was deduced to be as high as 20.5%. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2003 Elsevier B.V. All rights reserved.

High-density InAs nanowires realized in situ on (100) InP

High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5 x 10 nm(2). The linear density is as high as 70 wires/mu m. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)04134-0].

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

A transfer matrix approach to conductance in quantum waveguides

A transfer matrix approach is presented for the study of electron conduction in an arbitrarily shaped cavity structure embedded in a quantum wire. Using the boundary conditions for wave functions, the transfer matrix at an interface with a discontinuous potential boundary is obtained for the first time. The total transfer matrix is calculated by multiplication of the transfer matrix for each segment of the structure as well as numerical integration of coupled second-order differential equations. The proposed method is applied to the evaluation of the conductance and the electron probability density in several typical cavity structures. The effect of the geometrical features on the electron transmission is discussed in detail. In the numerical calculations, the method is found to be more efficient than most of the other methods in the literature and the results are found to be in excellent agreement with those obtained by the recursive Green's function method.

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Surface Initiated Polymerization from Substrates of Low Initiator Density and Its Applications in Biosensors

Surface initiated polymerization (SIP) has become an attractive method for tailoring physical and chemical properties of surfaces for a broad range of applications. Most of those application relied on the merit of a high density coating. In this study we explored a long overlooked field of SIP. SIP from substrates of low initiator density. We combined ellipsometry with AFM to investigate the effect of initiatior density and polymerization time on the morphology of polymer coatings. In addition, we carefully adjusted the nanoscale separation of polymer chains to achieve a balance between nonfouling and immobilization capacities. We further tested the performance of those coating on various biosensors, such as quartz crystal microbalance, surface plasmon resonance, and protein microarrays. The optimized matrices enhanced the performance of those biosensors. This report shall encourage researches to explore new frontiers in SIP that go beyond polymer brushes.

Brittle-ductile transition of particle toughened polymers: influence of the matrix properties

It was theoretically pointed out that the product of the yield stress and yield strain of matrix polymer that determined the brittle-ductile transition (BDT) of particle toughened polymers. For given particle and test condition, the higher the product of the yield stress and the yield strain of the matrix polymer, the smaller the critical interparticle distance (IDc) of the blends was. This was why the IDc (0.15 mum) of the polypropylene (PP)/rubber blends was smaller than that (0.30 mum) of the nylon 66/rubber blends, and the IDc of the nylon 66/rubber blends was smaller than that (0.60 mum) of the high density polyethylene (HDPE)/rubber blends.

Controlling dispersed state and exfoliation process of clay in polymer matrix

In the present review, the authors do not try to provide a comprehensive review of researches on polymer/clay nanocomposites (PCNs), but some examples to demonstrate different exfoliation processes of the clay in various polymer matrixes and the dispersed state of clay. Interaction between polymers and layered silicates plays an important role in adjusting the exfoliation process of layered silicates and the microstructure of polymer nanocomposites. Properties of polymer/layered silicate nanocomposites mainly depend on the dispersed state of layered silicates. The authors will also address the outline of the present research in the direction of PCNs including the discussion of technical problems and their possible solutions.

Mechanical and thermal properties of high-density polyethylene toughened with glass beads

Glass beads were used to improve the mechanical and thermal properties of high-density polyethylene (HDPE). HDPE/glass-bead blends were prepared in a Brabender-like apparatus, and this was followed by press molding. Static tensile measurements showed that the modulus of the HDPE/glass-bead blends increased considerably with increasing glass-bead content, whereas the yield stress remained roughly unchanged at first and then decreased slowly with increasing glass-bead content. Izod impact tests at room temperature revealed that the impact strength changed very slowly with increasing glass-bead content up to a critical value; thereafter, it increased sharply with increasing glass-bead content. That is, the lzod impact strength of the blends underwent a sharp transition with increasing glass-bead content. It was calculated that the critical interparticle distance for the HDPE/glass-bead blends at room temperature (25degreesC) was 2.5 mum. Scanning electron microscopy observations indicated that the high impact strength of the HDPE/glass-bead blends resulted from the deformation of the HDPE matrix. Dynamic mechanical analyses and thermogravimetric measurements implied that the heat resistance and heat stability of the blends tended to increase considerably with increasing glass-bead content.