CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS)

Neutron irradiated high resistivity (4-6 kOMEGA-cm) silicon detectors in the neutron fluence (PHI(n)) range of 5 X 10(11) n/cm2 to 1 X 10(14) n/cm2 have been studied using a laser deep level transient spectroscopy (L-DLTS). It has been found that the A-center (oxygen-vacancy, E(c) = 0.17 eV) concentration increases with neutron fluence, reaching a maximum at PHI(n) almost-equal-to 5 X 10(12) n/cm2 before decreasing with PHI(n). A broad peak has been found between 200 K and 300 K, which is the result of the overlap of three single levels: the V-V- (E(c) = 0.38 eV), the E-center (P-V, E(c) = 0.44 eV), and a level at E(c) = 0.56 eV that is probably V-V0. At low neutron fluences (PHI(n) < 5 X 10(12) n/cm2), this broad peak is dominated by V-V- and the E-centers. However, as the fluence increases (PHI(n) greater-than-or-equal-to 5 X 10(12) n/cm2), the peak becomes dominated by the level of E(c) = 0.56 eV.

Experimental study of the beta-delayed neutron decay of N-21

The first spectroscopic study for the beta decay of N-21 is carried out based on beta-n, beta-gamma, and beta-n-gamma coincidence measurements. The neutron-rich N-21 nuclei are produced by the fragmentation of the E/A=68.8 MeV Mg-26 primary beam on a thick Be-9 target and are implanted into a thin plastic scintillator that also plays the role of beta detector. The time of flight of the emitted neutrons following the beta decay are measured by the surrounding neutron sphere and neutron wall arrays. In addition, four clover germanium detectors are used to detect the beta-delayed gamma rays. Thirteen new beta-delayed neutron groups are observed with a total branching ratio of 90.5 +/- 4.2%. The half-life for the beta decay of N-21 is determined to be 82.9 +/- 7.5 ms. The level scheme of O-21 is deduced up to about 9 MeV excitation energy. The experimental results for the beta decay of N-21 are compared to the shell-model calculations.

beta-delayed neutron decay of N-21

The beta-delayed neutron and gamma spectra of neutron-rich nucleus N-21 using beta-gamma and beta-n coincidence measurements were presented in this paper. Thirteen new neutron groups ranging from 0.28 MeV to 4.98 MeV and with a total branching ratio 88.7 +/- 4.2% were observed. One gamma transition among the excited states of O-21 and foury transitions among the excited states of O-20 were identified in the beta decay chain of N-21. The ungated half-life of 83.8 +/- 2.1 ms was also determined for N-21.

beta-delayed proton decays of Sm-133 and Yb-149

Sm-133 was produced via fusion evaporation in the reaction Ca-40+Ru-96. Its P-delayed proton decay was studied by means of "p-gamma" coincidence in combination with a He-jet tape transport system, including half-lives, proton energy spectra, gamma-transitions following the proton emissions, and the branching ratios to the low-lying states in the grand-daughter nuclei. The possible spins and parities of 133Sm were extracted by fitting the experimental data with a statistical model calculation. The configuration-constrained nuclear potential energy surfaces of Sm-133 were calculated by using the Woods-Saxon Strutinsky method. Comparing the experimental and calculated results, the spins and parities Of Sm-133 were assigned to be 5/2(+) and 1/2(-), which is reconciled with our published simple (EC+beta(+)) decay scheme Of Sm-113 in 2001. In addition, our experimental data on the beta-delayed proton decay of Yb-149 reported in Eur. Phys. J., 2001, A12: 1-4 was also analyzed by using the same method. The spin and parity of Yb-149 was assigned to be 1/2-.

beta-delayed proton decays and spin assignments for Sm-133 and Yb-149

The proton-rich isotope Sm-133 was produced via the fusion evaporation reaction Ca-40 + Ru-96. Its beta-delayed proton decay was studied by p-gamma coincidence in combination with a He-jet tape transport system, and half-lives, proton energy spectra, gamma-transitions following the proton emission, as well as beta-delayed proton branching ratios to the low-lying states in the grand-daughter nucleus were determined. Comparing the observed beta-delayed proton branching ratios with statistical model calculations, the best agreement is found assuming that only one level with the spin of 3/2 in Sm-133 decays or two levels with the spins of 1/2 and 5/2 decay with similar half-lives. The configuration-constrained nuclear potential energy surfaces of Sm-133 were calculated using the Woods-Saxon-Strutinsky method, which suggests a 1/2-ground state and a 5/2(+) isomer with an excitation energy of 120 keV. Therefore, the simple(EC+beta(+)) decay scheme of Sm-133 in Eur. Phys. J.A 11,277(2001) has been revised. In addition, our previous experimental data on the beta-delayed proton decay of Yb-149 reported in Eur. Phys. J. A 12,1 ( 2 0 0 1) was also analyzed using the same method. The spin-parity of Yb-149 is suggested to be 1/2(-).

Spectroscopic and fluorescence decay behaviors of Yb3+ -doped SiO2-PbO-Na2O-K2O glass

The spectroscopic and fluorescent decay behaviors of Yb3+-doped SiO2-PbO-Na2O-K2O glass is reported in this work. Yb2O3 contents of 1, 1.5 and 2mol% are added into the glass. Through the measurement of absorption and fluorescence spectra, and fluorescent decay rate at room temperature and at low temperature (18 K), it is found that the nonradiative decay rate of Yb3+ ions is mainly determined by the interaction between residual hydroxyl groups and Yb3+ ions. Concentration quenching effect can be omitted in this glass up to the Yb3+ ion concentration of 8.98 x 10(20)/cm(3). Multiphonon decay rate is also very small because of the large energy gap between F-2(5/2) and F-2(7/2) levels of Yb3+ ions. (c) 2004 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

Competition in rotation-alignment between high-j neutrons and protons in transfermium nuclei

The study of rotation-alignment of quasiparticles probes sensitively the properties of high-j intruder orbits. The distribution of very-high-j orbits, which are consequences of the fundamental spin-orbit interaction, links with the important question of single-particle levels in superheavy nuclei. With the deformed single-particle states generated by the standard Nilsson potential, we perform Projected Shell Model calculations for transfermium nuclei where detailed spectroscopy experiments are currently possible. Specifically, we study the systematical behavior of rotation-alignment and associated band-crossing phenomenon in Cf, Fm, and No isotopes. Neutrons and protons from the high-j orbits are found to compete strongly in rotation-alignment, which gives rise to testable effects. Observation of these effects will provide direct information on the single-particle states in the heaviest nuclear mass region.

~(153)Er, ~(157)Yb(EC+#beta#~+)衰变纲图的首次建立

用蒸发中子反应产生~(157)Tb和~(153)Er，收集活性样品，作x, #gamma# 单谱及符合谱测量，对~(157)Yb和~(153)Er的(EC+#beta#~+)衰变进行了研究，给出了~(157)Yb及~(153)Er的衰变纲图，其中~(157)Yb的衰变纲图包括25条新#gamma#射线，分析~(157)Yb的衰变纲图，~(153)Er的衰变纲图包括15条#gamma#射线，并指定出~(153)Er半衰变期值，该值与文献给出值符合得很好。指定了~(153)Er的衰变纲图中能级状况

Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.