Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

ARM处理器在AFM纳米操作系统中的应用

文章介绍了在原子力显微镜(AFM)纳米操作系统中ARM处理器的应用及开发,在此基础上搭建了具有3D力反馈的纳米操作系统。结合AFM纳米操作系统的实时性问题,进行了ARM开发板的系统软件架构和PSD(四象限光电检测器)信号的PID控制结果的分析,使纳米操作系统在实时性和成像的质量等方面都得到相应改进。