46 resultados para Vulpius, Christiane, 1765-1816.


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GaAsSb/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (SEPL) measurement. For the first time, we have simultaneously observed the PL, from both type I and type II transitions in GaAsSb/GaAs heterostructure in the SEPL. The two transitions exhibit different PL, behaviours under different excitation energy. As expected, the peak energy of type I emission remains constant in the whole excitation energy range we used, while type U transition shows a significant blue shift with increasing excitation energy. The observed blue shift is well explained in terms of electron-hole charge separation model at the interface. Time-resolved(TR) PL exhibits more type 11 characteristic of GaAsSb/GaAs QW. Moreover, the results of the excitation-power-dependent PL and TRPL provide more direct information on the type-II nature of the band alignment in GaAsSb/GaAs quantum-well structures. By combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of Q(v) = 1.145 and Q(v)(0) = 0. 76 in our samples, respectively.

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提出了一种基于加同态公钥密码算法的匿名数字指纹方案,并给出了具有匿名功能的公钥和私钥对的具体构造方法,从而使该匿名指纹方案在发现盗版的情况下,销售商不需要第三方的帮助就能鉴别出数字多媒体作品的非法分发者,解决版权纠纷时也不需要购买者参与并提供相关的秘密信息,从而达到实现两方审判的目的.分析结果表明,该方案具有用户匿名及不可关联、销售商的可保证安全性和用户的可保证安全性等特点.

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消息认证码是保证消息完整性的重要工具,它广泛应用于各种安全系统中.随着可证明安全理论的逐渐成熟,具备可证明安全的消息认证码无疑成为人们的首选.本文基于XOR MAC和PMAC的构造方法,使用分组密码构造了一种确定性、可并行的消息认证码-DXOR MAC(Deterministic XOR MAC).在底层分组密码是伪随机置换的假设下,本文使用Game-Playing技术量化了攻击者成功伪造的概率,从而证明了其安全性.

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根据中小型工业窑炉的经济条件和发展现状,本文设计一种粉料流量采用纯气动控制方式的气力输送装置,并在此实验台上做了一些基础性的理论和实验研究。从管内两相流体受力平衡的角度,推导出了不同雷诺数下(Rex<1000)颗粒与气体间拖曳体积力公式,以此为基础,提出了管内压降的计算模型,找出了压降的影响因素。同时根据质量守恒和气体动力学关系,得出了管内气流速度、颗粒速度、固气比、孔隙率等输送特性参数的理论计算式。在不同的条件下,通过实验研究了输送风量、流化风量、下降管长度对固体质量流量、固气比、单位管长压降、摩擦阻力

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延安地区是黄土高原水土流失最为严重的地区之一。利用延安气象站1951-2005年的日降雨量数据,采用日雨量侵蚀力模型估算延安地区降雨侵蚀力,结果表明:该地区降雨侵蚀力主要集中在6-9月,占到了全年的85.6%。年降雨侵蚀力的平均值为1765.73MJ.mm/(hm2.h),55年间,年降雨侵蚀力变异程度适中,从整体上看,趋势保持平稳,其离差系数Cv和变异趋势系数r分别为0.41和-0.071。

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利用近50年来西沙、南沙海域SST及全球温度资料,分析西沙、南沙海域SST的

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用选择激发光荧光研究了分子束外延生长的GaAsSb/GaAs单量子阱的光学性质,第一次同时观察到空间直接(Ⅰ类)和间接(Ⅱ类)跃迁.它们表现出不同的特性:Ⅰ类跃迁具有局域化特性,其发光能量不随激发光能量而变;Ⅱ类发光的能量位置随激发功率的增大而蓝移,也随激发光能量的增加而蓝移,复合发光发生在位于异质结GaAs一侧的电子和GaAsSb中的空穴之间,实验结果可以很好地用电荷分离造成的能带弯曲模型来解释,这也是空间间接跃迁的典型特性.还用光荧光的激发强度关系和时间分辨光谱进一步论证了GaAsSb/GaAs能带排列的Ⅱ类特性,并通过简单计算得到了应变和非应变状态下GaAsSb/GaAs异质结的带阶系数.