Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals

The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

Electromagnetic-field-induced cohesive force enhancement in a metallic nanowire

We theoretically study the conducting electronic contribution to the cohesive force in a metallic nanowire irradiated under a transversely polarized external electromagnetic field at low temperatures and in the ballistic regime. In the framework of the free-electron model, we have obtained a time-dependent two-level electronic wavefunction by means of a unitary transformation. Using a thermodynamic statistical approach with this wavefunction, we have calculated the cohesive force in the nanowire. We show that the cohesive force can be divided into two components, one of which is independent of the electromagnetic field (static component), which is consistent with the existing results in the literature. The magnitude of the other component is proportional to the electromagnetic field strength. This extra component of the cohesive force is originally from the coherent coupling between the two lateral energy levels of the wire and the electromagnetic field.

Intraband relaxation and its influences on quantum dot lasers

A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2ps, 7.5ps and 20ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.

Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.

InAs/GaAs single-electron quantum dot qubit

The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.

Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well

Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostatic pressure up to 9 GPa. Both the emissions from the GaNAs well and GaAs barrier are observed. The GaNAs-related peak shows a much weaker pressure dependence compared to that of the GaAs band gap. A group of new peaks appear in the spectra when the pressure is beyond 2.5 GPa, which is attributed to the emissions from the N isoelectronic traps in GaAs. The pressure dependence of the GaNAs-related peaks was calculated using the two-level model with the measured pressure coefficients of the GaAs band gap and N level as fitting parameters. It is found that the calculated results deviate seriously from the experimental data. An increasing of the emission intensity and the linewidth of the GaNAs-related peaks was also observed and briefly discussed. (C) 2001 American Institute of Physics.

Determination of the macroscopic optical properties for the NAEC/PEK-c guest-host polymer films

The polyetherketone (PEK-c) guest-host polymer films doped with (4'-nitro)-3-azo-9-ethyl-carbazole (NAEC) were prepared. The films were poled by corona-onset poling at elevated temperature (COPET). The orientational order parameter of the chromophores NAEC in poled polymer film was determined by measuring the absorption spectra of the films before and after being poled. By using the two-level model, the measured dispersion of the refractive index of the polymer film, and the dispersion of the first hyperpolarizability of chromophore NAEC, the dispersion of the macroscopic second-order nonlinear optical (NLO) and linear electrooptic (EO) coefficients was evaluated for the NAEC/PEK-c guest-host polymer film. (C) 2001 Elsevier Science Ltd. All rights reserved.

Investigation on the nonlinear optical properties of the DCNP/PEK-c guest-host polymer films

The polyetherketone (PEK-c) guest-host polymer thin films doped with 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pryazole (DCNP) were prepared. The polymer films were investigated with in situ second-harmonic generation (SHG) measurement. The corona poling temperature was optimized by the temperature dependence of the in situ SHG signal intensity under the poling electric field applying. The temporal and temperature stability of the second-order properties of the poled polymer film were measured by the in situ SHG signal intensity probing. The second-order NLO coefficient chi ((2))(33) = 32.65 pm/V at lambda = 1064 nm was determined by using the Makel fringe method after poling under the optimal poling condition. The dispersion of the NLO coefficient of the guest-host polymer system was determined by the measured value of chi ((2))(33) at 1064 nm and the two-level model.

Electro-optical properties and temporal stability of the guest-host DCNP/PEK-c polymer thin film

The polyetherketone (PEK-c) guest-host system thin films in which the range of the weight percent of 3-(1,1-dicyanothenyl)-1-phenyl-4, 5- dihydro-1H-pryazole (DCNP) is from 20% to 50% were prepared. The predicted high value of electro-optical (EO) coefficient gamma(33) = 48.8 pm/V by using two-level model was obtained when the weight percent of DCNP in the polymer system is 40%, whereas EO coefficients are attenuated at higher chromophore loading then 40%. The temporal stability of the EO activity of the guest-host polymer was evaluated by probing the decay of the orientational order of the chromophores in the polymer system.

Low power design in 100 MHz embedded SRAM

Low power design method is used in a 100MHz embedded SRAM. The embedded SRAM used in a FFT chip is divided into 16 blocks. Two-level decoders are used and only one block can be selected at one time by tristate control circuits, while other blocks are set stand-by. The SRAM cell has been optimized and the cell area has been minimized at the same time.

Two mechanisms for population inversion via two-colour coherent excitation in three-level systems

We analyse the physical origin of population inversion via continuous wave two-colour coherent excitation in three-level systems by dressing the inverted transition. Two different mechanisms are identified as being responsible for the population inversion. For V-configured systems and cascade (E) configured systems with inversion on the lower transition, the responsible mechanism is the selective trapping of dressed states, and the population inversion approaches the ideal value of 1. For Lambda-configured systems and Xi-configured systems with inversion on the upper transition, population inversion is based on the selective excitation of dressed states, with the population inversion tending towards 0.5. As the essential difference between these two mechanisms, the selective trapping of dressed states occurs in systems with strong decay into dressed states while the selective excitation appears in systems with strong decay out of dressed states.

Optimization of multi-cycle two-color laser fields for the generation of an isolated attosecond pulse

The effect of the mixing of pulsed two color fields on the generation of an isolated attosecond pulse has been systematically investigated. One main color is 800 nm and the other color (or secondary color) is varied from 1.2 to 2.4 mu m. This work shows that the continuum length behaves in a similar way to the behavior of the difference in the square of the amplitude of the strongest and next strongest cycle. As the mixing ratio is increased, the optimal wavelength for the extended continuum shifts toward shorter wavelength side. There is a certain mixing ratio of intensities at which the continuum length bifurcates, i.e., the existence of two optimal wavelengths. As the mixing ratio is further increased, each branch bifurcates again into two sub-branches. This 2D map analysis of the mixing ratio and the wavelength of the secondary field easily allows one to select a proper wavelength and the mixing ratio for a given pulse duration of the primary field. The study shows that an isolated sub-100 attosecond pulse can be generated mixing an 11 fs full-width-half-maximum (FWHM), 800 laser pulse with an 1840 nm FWHM pulse. Furthermore the result reveals that a 33 fs FWHM, 800 nm pulse can produce an isolated pulse below 200 as, when properly mixed. (c) 2008 Optical Society of America.

Dynamic storage performance of two cyanine dye films and optimization design for a recordable compact disk

The optical constants of two cyanine dye films that we prepared were measured with a RAP-1-type (RAP is rotating analyzer and polarizer) spectroscopic ellipsometer. Toward making a simplified model for the wafers of a recordable compact disk (CD-R), we give their optimization designs developed with the cyanine dye films. in addition, the dynamic storage performances of two sample disks were tested by our dynamic storage testing system. Measurement results of the sample disks were obtained to test and verify our film designs. (C) 2000 Optical Society of America. OCIS codes: 160.4890, 160.4760, 210.4810.