Critical Biot's number for Determination of the Sensitivity of Spherical Ceramics to Thermal Shock

A critical Biot number, which determines both the sensitivity of spherical ceramics to quenching and the durations of the temperature-wave propagation and the thermal stresses in the ceramics subjected to thermal shock, is theoretically obtained. The results prove that once the Biot number of a ceramic sphere is greater than the critical number, its thermal shock failure will be such a rapid process that the failure only occurs in the initial regime of heat conduction, whereas the thermal shock failure of the ceramic sphere is uncertain in the course of heat conduction. The presented results provide a guide to the selection of the ceramics applied in the thermostructural engineering with thermal shock.

Investigation of some critical parameters of buffer conditions for the development of quantum dots-based optical sensors

The unique surface-sensitive properties make quantum dots (QDs) great potential in the development of sensors for various analytes. However, quantum dots are not only sensitive to a certain analyte, but also to the surrounding conditions. The controlled response to analyte may be the first step in the designing of functional quantum dots sensors. In this study, taking the quenching effect of benzoquinone (BQ) on CdTe QDs as model, several critical parameters of buffer solution conditions with potential effect on the sensors were investigated. The pH value and the concentration of sodium citrate in the buffer solution critically influenced the quenching effects of BQ.

Critical crystallization temperature for the occurrence of epitaxy between high-density polyethylene and isotactic polypropylene

The crystallization behavior of high-density polyethylene (HDPE) on highly oriented isotactic polypropylene (iPP) at elevated temperatures (e.g., from 125 to 128 degrees C), was studied using transmission electron microscopy and electron diffraction. The results show that epitaxial crystallization of HDPE on the highly oriented iPP substrates occurs only in a thin layer which is in direct contact with the iPP substrate, when the HDPE is crystallized from the melt on the oriented iPP substrates at 125 degrees C. The critical layer thickness of the epitaxially crystallized HDPE is not more than 30 nm when the HDPE is isothermally crystallized on the oriented iPP substrates at 125 degrees C. When the crystallization temperature is above 125 degrees C, the HDPE crystallizes in the form of crystalline aggregates and a few individual crystalline lamellae. But both the crystalline aggregates and the individual crystalline lamellae have no epitaxial orientation relationship with the iPP substrate. This means that there exists a critical crystallization temperature for the occurrence of epitaxial crystallization of HDPE on the melt-drawn oriented iPP substrates (i.e., 125 degrees C). (C) 1997 John Wiley & Sons, Inc.