37 resultados para TAYLOR VALLEY


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To study the immunologic function of bursin, we analyzed the effects of anti-bursin monoclonal antibody (mAb) on the immunosuppression in ducks (Cherry Valley duck) by injecting various doses of the anti-bursin mAb into 13-d duck embryos. After hatch, cell-mediated immune activity and humoral responses were studied using lymphocyte proliferation test, tube agglutination test, and indirect enzyme-linked immuno-sorbent assay to detect anti-Escherichia coli antibodies and antibodies to Riemerella anatipester, respectively. Simultaneously, relative weights (BW-adjusted) of bursa of Fabricius (BF), spleen, and thymus were determined. Additionally, the morphology of BF, spleen, and thymus was examined at various ages using conventional histology. Follicle morphology of BF was analyzed by image analysis. The results indicated that anti-bursin mAb markedly decreased duck lymphocyte proliferation, the antibody-producing ability to bacteria, as well as the relative BF weight. Moreover, the anti-bursin mAb hindered the development of BF follicles.

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We investigate the couplings between different energy band valleys in a metal-oxide-semiconductor field-effect transistor (MOSFET) device using self-consistent calculations of million-atom Schrodinger-Poisson equations. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. The MOSFET device is under nonequilibrium condition with a source-drain bias up to 2 V and a gate potential close to the threshold potential. We find that all the intervalley couplings are small, with the coupling constants less than 3 meV. As a result, the system eigenstates derived from different bulk valleys can be calculated separately. This will significantly reduce the simulation time because the diagonalization of the Hamiltonian matrix scales as the third power of the total number of basis functions. (C) 2008 American Institute of Physics.

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This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

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We put forward a two-terminal valley filter based on a bulk graphene sheet under the modulations of both a local perpendicular magnetic field and a substrate strain. When only one of the two modulations is present, no valley polarization can be generated. A combination of the two modulations leads to a different (but not opposite) shifts of the K and K' valleys, which could be utilized to generate a valley-polarized current. The degree of the valley polarization can be tuned by the strain strength and the inclusion of a scalar potential. The valley polarization changes its polarity as the local magnetic field switches its direction.

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The space-time cross-correlation function C-T(r, tau) of local temperature fluctuations in turbulent Rayleigh-Benard convection is obtained from simultaneous two-point time series measurements. The obtained C-T(r, tau) is found to have the scaling form C-T(r(E), 0) with r(E)=[(r-U tau)(2)+ V-2 tau(2)](1/2), where U and V are two characteristic velocities associated with the mean and rms velocities of the flow. The experiment verifies the theory and demonstrates its applications to a class of turbulent flows in which the requirement of Taylor's frozen flow hypothesis is not met.