Fabrication of high quality two-dimensional photonic crystal mask layer patterns

This work discusses the fabrication of two-dimensional photonic crystal mask layer patterns. Photonic crystal patterns having holes with smooth and straight sidewalls are achieved by optimizing electron beam exposure doses during electron beam lithography process. Thereafter, to precisely transfer the patterns from the beam resist to the SiO2 mask layer, we developed a pulse-time etching method and optimize various reaction ion etching conditions. Results show that we can obtain high quality two-dimensional photonic crystal mask layer patterns.

Laterally confined modes in wet-etched, metal-coated, quantum-dot-inserted pillar microcavities

We report the fabrication and the measurement of microcavities whose optical eigenmodes were discrete and were well predicted by using the model of the photonic dot with perfectly reflected sidewalls. These microcavities were consisted of the semiconductor pillar fabricated by the simple wet-etched process and successive metal coating. Angle-resolved photoluminescence spectra demonstrate the characteristic emission of the corresponding eigenmodes, as its pattern revealed by varying both polar (0) and azimuthal (45) angles. It is shown that the metal-coated sidewalls can provide an efficient way to suppress the emission due to the leaking modes in these pillar microcavities.

Investigation of mode characteristics for a square cavity with a pedestal by a three-dimensional finite-difference time-domain technique

Mode characteristics of a strongly confined square cavity suspended in air via a pedestal on the substrate are investigated by a three-dimensional finite-difference time-domain technique. The mode wavelengths and mode quality factors (Q factors) are calculated as the functions of the size of the pedestal and the slope angle 0 of the sidewalls of the square slab, respectively For the square slab with side length of 2 mu m, thickness of 0.2 mu m, and refractive index of 3.4, on a square pedestal with refractive index of 3.17, the Q factor of the whispering-gallery (WG)-like mode transverse-electric TE(3.5)o first increases with the side length b of the square pedestal and then quickly decreases as b > 0.4 mu m, but the Q factor of the WG-like mode TE(4.6)o drops down quickly as b > 0.2 mu m, owing to their different symmetries. The results indicate that the pedestal can also result in mode selection in the WG-like modes. In addition, the numerical results show that the Q factors decrease 50% as the slope angle of the sidewalls varies from 90 degrees to 80 degrees. The mode characteristics of WG-like modes in the square cavity with a rectangular pedestal are also discussed. The results show that the nonsquare pedestal largely degrades the WG-like modes. (c) 2006 Optical Society of America

Analysis of mode characteristics for deformed square resonators by FDTD technique

The mode frequencies and quality factors (Q-factors) in two-dimensional (2-D) deformed square resonators are analyzed by finite-difference time-domain (FDTD) technique. The results show that the deformed square cavities with circular and cut corners have larger Q-factors than the perfect ones at certain conditions. For a square cavity with side length of 2 mu m and refractive index of 3.2, the mode Q-factor can increase 13 times as the perfect corners are replaced by a quarter of circle with radius of 0.3 pm. Furthermore the blue shift with the increasing deformations is found as a result of the reduction in effective resonator area. In square cavities with periodic roughness at sidewalls which maintains the symmetry of the square, the Q-factors of the whisperin gallery (WG)-like modes are still one order of magnitude larger that those of non-WG-like modes. However, the Q-tactors of these two types of modes are of the same order in the square cavity with random roughness. We also find that the rectangular and rhombic deformation largely reduce the Q-factors with the increasing offset and cause the splitting of the doubly degenerate modes due to the breaking of certain symmetry properties.

Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy

Selective area growth (SAG) of GaN on SiO2 stripe-patterned GaN/GaAs(001) substrates was carried out by metalorganic vapor-phase epitaxy. The SAG samples were investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). SEM observations showed that the morphology of SAG GaN is strongly dependent on the window stripe orientation and slightly affected by the orientation relationship between the window stripes and the gas flow. The (I 1 1)B sidewalls formed on the SAG GaN stripes are found to be stable. XRD measurements indicated the full-widths at half-maximum (FWHMs) of cubic GaN (0 0 2) rocking curves are reduced after SAG. The measured FWHMs with omega-axis parallel to [1(1) over bar 0] are always larger than the FWHM values obtained with omega-axis parallel to [I 10], regardless of the orientation relationship between the w-axis and the GaN stripes. (C) 2003 Elsevier Science B.V. All rights reserved.

Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD

The lateral epitaxial overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition, and the cross section shape of the stripes was characterized by scanning electron microscopy. Inclined {11-2n} facets (n approximate to 1-2.5) were observed in the initial growth, and they changed gradually into the vertical {11-20} sidewalls in accordance with the process of the lateral overgrowth. A model was proposed utilizing diffusion equations and boundary conditions to simulate the concentration of the Ga species constituent throughout the concentration boundary layer. Solutions to these equations are found using the two-dimensional, finite element method. We suggest that the observed evolution of sidewall facets results from the variation of the local V/III ratio during the process of lateral overgrowth induced by the lateral supply of the Ga species from the SiNx mask regions to the growing GaN regions.

Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates

The formation of triangular-shaped dot-like (TD) structures grown by molecular beam epitaxy on GaAs (311)A substrates patterned with square- and triangular-shaped holes is compared. On substrates patterned with square-shaped holes, TD structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)A sidewalls of the as-etched holes develop a rough morphology during growth. The evolution of the rough ( 1 1 1)A sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar TD structures with highly improved uniformity over the entire pattern. Spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the TD structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. Formation of TD structures provides a new approach Do fabricate three-dimensionally confined nanostructures in a controlled manner.

Domains in ferroelectric nanodots

Almost free-standing single crystal mesoscale and nanoscale dots of ferroelectric BaTiO(3) have been made by direct focused ion beam patterning of bulk single crystal material. The domain structures which appear in these single crystal dots, after cooling through the Curie temperature, were observed to form into quadrants, with each quadrant consisting of fine 90 degrees stripe domains. The reason that these rather complex domain configurations form is uncertain, but we consider and discuss three possibilities for their genesis: first, that the quadrant features initially form to facilitate field-closure, but then develop 90 degrees shape compensating stripe domains in order to accommodate disclination stresses; second, that they are the result of the impingement of domain packets which nucleate at the sidewalls of the dots forming "Forsbergh" patterns (essentially the result of phase transition kinetics); and third, that 90 degrees domains form to conserve the shape of the nanodot as it is cooled through the Curie temperature but arrange into quadrant packets in order to minimize the energy associated with uncompensated surface charges (thus representing an equilibrium state). While the third model is the preferred one, we note that the second and third models are not mutually exclusive.

InGaAsP-InP Square Microlasers With a Vertex Output Waveguide

InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO2 and p-electrode TiAu metals. For a square microlaser with a side length of 30 mu m and a 2-mu m-wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 mu m, respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 degrees at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO2-Ti-Au, and SiO2-Au are compared by FDTD simulations.

Numerical study on onset of oscillatory thermocapillary flow in rectangular liquid pool

Thermocapillary flow in a rectangular liquid pool of large Prandtl fluid (Pr = 105.6) is numerically studied in microgravity. Oscillatory thermocapillary flow arises when the imposed temperature difference between the sidewalls exceeds a critical value. The fluctuations of the oscillatory flow, accompanied by the propagation of the hydrothermal wave from the cold sidewall to the hot one, are much smaller than the time-averaged velocity and temperature fields. The corresponding disturbance cells arise in the centre of the liquid pool initially, and extend to the whole region with the increasing imposed temperature difference. The present study reveals the different characteristics of the oscillatory themocapillary flow in the rectangular liquid pool as compared to the cases in other configurations.

In situ PEI and formic acid directed formation of Pt NPs/MWNTs hybrid material with excellent electrocatalytic activity

A hybrid material based on Pt nanoparticles (Pt NPs) and multi-walled carbon nanotubes (MWNTs) was fabricated with the assistance of PEI and formic acid. The cationic polyelectrolyte PEI not only favored the homogenous dispersion of carbon nanotubes (CNTs) in water, but also provided sites for the adsorption of anionic ions PtCl42- on the MWNTs' sidewalls. Deposition of Pt NPs on the MWNTs' sidewalls was realized by in situ chemical reduction of anionic ions PtCl42- with formic acid. The hybrid material was characterized with TEM, XRD and XPS. Its excellent electrocatalytic activity towards both oxygen reduction in acid media and dopamine redox was also discussed.

Thionine-interlinked multi-walled carbon nanotube/gold nanoparticle composites

Multi-walled carbon nanotube (MWCNT)/thionine/gold nanoparticle composites were prepared by binding gold nanoparticles to the surfaces of thionine-coated carbon nanotubes. TEM images show gold nanoparticles distributed uniformly on nanotube walls and ends. UV-Vis, Raman, FT-IR, and zeta potential measurements were used to examine the properties of the resulting products. The composites demonstrate significant electrocatalytic activity for oxygen reduction. Although only gold nanoparticles were investigated here, the method could be easily extended to attach other metallic nanoparticles to the sidewalls of carbon nanotubes.

In situ synthesis and characterization of multiwalled carbon nanotube/Au nanoparticle composite materials

An effective and facile in Situ reduction approach for the fabrication of carbon nanotube-supported Au nanoparticle (CNT/Au NP) composite nanomaterials is demonstrated in this article. Linear polyethyleneimine (PEI) is ingeniously used as both a functionalizing agent for the multiwalled carbon nanotubes (MWNTs) and a reducing agent for the formation of An NPs. This method involves a simple mixing process followed by a mild heating process. This approach does not need the exhaustive surface oxidation process of CNTs. The coverage of Au NPs on CNTs is tunable by varying the experimental parameters, such as the initial molar ratio of PEI to HAuCl4, the relative concentration of PEI and HAUCl(4) to MWNTs, and the temperature and duration of the heat treatment. More importantly, even the heterogeneous CNT/Au composite nanowires are obtainable through this method. TEM, XPS, and XRD are all used to characterize the CNT/Au composite materials. In addition, the optical and electrocatalytic properties are investigated.

Preparation of cobalt hexacyanoferrate nanowires using carbon nanotubes as templates

A simple and convenient method for preparation of cobalt hexacyanoferrate (CoHCF) nanowires by electrodeposition was reported. Multiwall carbon nanotubes (MWNTs) were used as templates to fabricate CoHCF nanowires. MWNTs could affect the size of CoHCF nanoparticles and made them grow on the sidewalls of carbon nanotubes during the process of electrodeposition. Thus CoHCF nanowires could be obtained by this method. Field-emission scanning electron microscopy, UV-vis spectroscopy, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to characterize these nanowires. These results showed the CoHCF nanowires could be easily and successfully obtained and it gave a novel approach to prepare inorganic nanowires.