Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Electronic investigation of self-organized InAs quantum dots

Deep Level Transient Spectroscopy (DLTS) has been applied to investigate the electronic properties of self-organized InAs quantum dots. The energies of electronic ground states of 2.5ML and 1.7ML InAs quantum dots (QDs) with respect to the conduction band of bulk GaAs are about 0.21 eV and 0.09 eV, respectively. We have found that QDs capture electrons by lattice relaxation through a multi-phonon emission process. The samples are QDs embedded in superlattices with or without a 500 Angstrom GaAs spacing layer between every ten periods of a couple of GaAs and InAs layers. The result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.

1ST-PRINCIPLES CALCULATIONS FOR QUASI-PARTICLE ENERGIES OF GAP AND GAAS

We have applied the Green-function method in the GW approximation to calculate quasiparticle energies for the semiconductors GaP and GaAs. Good agreement between the calculated excitation energies and the experimental results was achieved. We obtained calculated direct band gaps of GaP and GaAs of 2.93 and 1.42 eV, respectively, in comparison with the experimental values of 2.90 and 1.52 eV, respectively. An ab initio pseudopotential method has been used to generate basis wave functions and charge densities for calculating the dielectric matrix elements and self-enegies. To evaluate the dynamical effects of the screened interaction, the generalized-plasma-pole model has been utilized to extend the dielectric matrix elements from static results to finite frequencies. We presen the calculated quasiparticle energies at various high-symmetry points of the Brillouin zone and compare them with the experimental results and other calculations.

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML. The fast redshift of PL energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled InAs quantum dots. The measured thermal activation energies of different samples demonstrated that the InAs wetting layer may act as a barrier for the thermionic emission of carriers in high-quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to escape thermally from the localized states.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.

Electronic investigation of self-organized InAs quantum dots

Deep Level Transient Spectroscopy (DLTS) has been applied to investigate the electronic properties of self-organized InAs quantum dots. The energies of electronic ground states of 2.5ML and 1.7ML InAs quantum dots (QDs) with respect to the conduction band of bulk GaAs are about 0.21 eV and 0.09 eV, respectively. We have found that QDs capture electrons by lattice relaxation through a multi-phonon emission process. The samples are QDs embedded in superlattices with or without a 500 Angstrom GaAs spacing layer between every ten periods of a couple of GaAs and InAs layers. The result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.

Study of morphology and phase diagram of the H-shaped (AC)B(CA) ternary block copolymers using self-consistent field theory

By using a combinatorial screening method based on the self-consistent field theory (SCFT) for polymer systems, the micro-phase morphologies of the H-shaped (AC)B(CA) ternary block copolymer system are studied in three-dimensional (3D) space. By systematically varying the volume fractions of the components A, B, and C, six triangle phase diagrams of this H-shaped (AC)B(CA) ternary block copolymer system with equal interaction energies among the three components are constructed from the weaker segregation regime to the strong segregation regime, In this study, thirteen 3D micro-phase morphologies for this H-shaped ternary block copolymer system are identified to be stable and seven 3D microphase morphologies are found to be metastable.

Self-assembly of diblock copolymer mixtures in confined states: A Monte Carlo study

The self-assembly of diblock copolymer mixtures (A-b-B/A-b-C or A-b-B/B-b-C mixtures) subjected to cylindrical confinement (two-dimensional confinement) was investigated using a Monte Carlo method. In this study, the boundary surfaces were configured to attract blocks A but repel blocks B and C. Relative to the structures of the individual components, the self-assembled structures of mixtures of the diblock copolymers were more complex and interesting. Under cylindrical confinement, with varying cylinder diameters and interaction energies between the boundary surfaces and the blocks, we observed a variety of interesting morphologies. Upon decreasing the cylinder's diameter, the self-assembled structures of the A(15)B(15)/A(15)C(15) mixtures changed from double-helix/cylinder structures (blocks B and C formed double helices, whereas blocks A formed the outer barrel and inner core) to stacked disk/cylinder structures (blocks B and C formed the stacked disk core, blocks A formed the outer cylindrical barrel), whereas the self-assembled structures of the A(15)B(7)/B7C15 mixtures changed from concentric cylindrical barrel structures to screw/cylinder structures (blocks C formed an inside core winding with helical stripes, whereas blocks A and B formed the outer cylindrical barrels) and then finally to the stacked disk/cylinder structures.

A self-consistent field theory study on the morphologies of linear ABCBA and H-shaped (AB)(2)C(BA)(2) block copolymers

By using a combinatorial screening method based on the self-consistent field theory, we investigate the equilibrium morphologies of linear ABCBA and H-shaped (AB)(2)C(BA)(2) block copolymers in two dimensions. The triangle phase diagrams of both block copolymers are constructed by systematically varying the volume fractions of blocks A, B, and C. In this study, the interaction energies between species A, B, and C are set to be equal. Four different equilibrium morphologies are identified, i.e., the lamellar phase (LAM), the hexagonal lattice phase (HEX), the core-shell hexagonal lattice phase (CSH), and the two interpenetrating tetragonal lattice phase (TET2). For the linear ABCBA block copolymer, the reflection symmetry is observed in the phase diagram except for some special grid points, and most of grid points are occupied by LAM morphology. However, for the H-shaped (AB)(2)C(BA)(2) block copolymer, most of the grid points in the triangle phase diagram are occupied by CSH morphology, which is ascribed to the different chain architectures of the two block copolymers. These results may help in the design of block copolymers with different microstructures.

Investigation of the structures of the product ions produced via self-CI of acetone

The ion-molecule reactions in acetone were investigated which were induced under the chemical ionization. The structural information of the reaction products were obtained by using collision-induced dissociation (CID) technique performed at ion kinetic energies of 30eV.