DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy

Al-related DX-like centers were observed in n-type Al-doped ZnS1-xTex epilayers grown by molecular-beam epitaxy on GaAs substrates. The capacitance-voltage measurement, deep-level transient spectroscopy, and photoconductivity spectroscopy revealed that the behaviors of Al donors in ZnS1-xTex were similar to the so-called DX centers in AlxGa1-xAs. The optical ionization energies (E-i) and emission barriers (E-e) for the observed two Al-related DX-like centers were determined as E-i similar to 1.0 and 2.0cV and E-e similar to 0.21 and 0.39 eV, respectively. It was also shown that the formation of Al-related DX-like centers resulted in a significantly large lattice relaxation in ZnS1-xTex. (C) 2000 Elsevier Science B.V. All rights reserved.

A Low Power Baseband Chain for CMMB Application

This paper presents experimental results of an analog baseband circuit for China Multimedia Mobile Broadcasting (CMMB) direct conversion receiver in 0.35um SiGe BiCMOS process. It is the first baseband of CMMB RFIC reported so far. A 8(th)-order chebyshev low pass filter (LPF) with calibration system is used in the analog baseband circuit, the filter provides 0.5 dB passband ripple and -35 dB attenuation at 6MHz with the cutoff frequency at 4MHz, the calibration of filter is reported to achieve the bandwidth accuracy of 3%. The baseband variable gain amplifier (VGA) achieves more than 40 dB gain tuning with temperature compensation. In addition, A DC offset cancellation circuit is also introduced to remove the offset from layout and self-mixing, and the remaining offset voltage and current consumption are only 6mV and 412uA respectively. Implemented in a 0.35um SiGe technology with 1.1 mm(2) die size, this tuner baseband achieves OIP3 of 25.5 dBm and dissipate 16.4 mA under 2.8-V supply.