Modeling and Simulation of Liquid Pulsed Particulate Fluidized Beds

Pulsed fluidization is of considerable interest in process engineering for improving fluidization quality. Quantitative understanding of the pulsed two-phase flow behaviors is very important for proper design and optimum operation of such contactors. The

Stability Of Adhesion Clusters And Cell Reorientation Under Lateral Cyclic Tension

This work is motivated by experimental observations that cells on stretched substrate exhibit different responses to static and dynamic loads. A model of focal adhesion that can consider the mechanics of stress fiber, adhesion bonds, and substrate was developed at the molecular level by treating the focal adhesion as an adhesion cluster. The stability of the cluster under dynamic load was studied by applying cyclic external strain on the substrate. We show that a threshold value of external strain amplitude exists beyond which the adhesion cluster disrupts quickly. In addition, our results show that the adhesion cluster is prone to losing stability under high-frequency loading, because the receptors and ligands cannot get enough contact time to form bonds due to the high-speed deformation of the substrate. At the same time, the viscoelastic stress fiber becomes rigid at high frequency, which leads to significant deformation of the bonds. Furthermore, we find that the stiffness and relaxation time of stress fibers play important roles in the stability of the adhesion cluster. The essence of this work is to connect the dynamics of the adhesion bonds (molecular level) with the cell's behavior during reorientation (cell level) through the mechanics of stress fiber. The predictions of the cluster model are consistent with experimental observations.

Singularity of dynamic stress fields around an interface crack between viscoelastic bodies

The singular nature of the dynamic stress fields around an interface crack located between two dissimilar isotropic linearly viscoelastic bodies is studied. A harmonic load is imposed on the surfaces of the interface crack. The dynamic stress fields around the crack are obtained by solving a set of simultaneous singular integral equations in terms of the normal and tangent crack dislocation densities. The singularity of the dynamic stress fields near the crack tips is embodied in the fundamental solutions of the singular integral equations. The investigation of the fundamental solutions indicates that the singularity and oscillation indices of the stress fields are both dependent upon the material constants and the frequency of the harmonic load. This observation is different from the well-known -1/2 oscillating singularity for elastic bi-materials. The explanation for the differences between viscoelastic and elastic bi-materials can be given by the additional viscosity mismatch in the case of viscoelastic bi-materials. As an example, the standard linear solid model of a viscoelastic material is used. The effects of the frequency and the material constants (short-term modulus, long-term modulus and relaxation time) on the singularity and the oscillation indices are studied numerically.

A new dynamic model for study of dislocation pattern formation

Based on the principle given in nonlinear diffusion-reaction dynamics, a new dynamic model for dislocation patterning is proposed by introducing a relaxation time to the relation between dislocation density and dislocation flux. The so-called chemical potential like quantities, which appear in the model can be derived from variation principle for free energy functional of dislocated media, where the free energy density function is expressed in terms of not only the dislocation density itself but also their spatial gradients. The Linear stability analysis on the governing equations of a simple dislocation density shows that there exists an intrinsic wave number leading to bifurcation of space structure of dislocation density. At the same time, the numerical results also demonstrate the coexistence and transition between different dislocation patterns.

Gain saturation in gas flow and chemical lasers

A theoretical model for gain saturation in gas flow and chemical lasers is presented. The theory is applicable to all possible numerical values of τ/τc, where τ is the characteristie flow time for the flowing gas to move across the laser action region and τc is the characteristic collision relaxation time. The saturation effects of the convection and the "source flow" of the inverted population are revealed. A general relation of gain coefficient and some new gain saturation laws are obtained. For the special case of τ/τc1, the present theoretical results agree with the experimental results on the "anomalous" saturation phenomena in the supersonic diffusion HF chemical laser determined recently by Gross and Coffer[8]. The theory also agrees with the measured results of saturation intensity varying with τ/τc in gas flow CO2 lasers[7]. For the special case of τ/τc1, the present theory is consistent with both the standard theory[1] for gas lasers where the gas has no macroscopic motion and the known gain saturation theory[2-5] for gas flow and chemical lasers.

在激波波面中氧分子的非平衡离解

对强激波作用下双原子分子振动与离解耦合的非平衡离解过程进行了理论计算.本工作的特点是将计算起点建立在分子基本参数上,采用主方程理论处理振动与离解的耦合,振动跃迁几率用SSH理论计算,在离解限附近考虑多量子数跃迁并计及原子复合的影响.对O2-Ar体系,计算给出了在正激波后O2分子振动能级分布、振动弛豫时间、离解孕育时间、离解产物浓度、离解速率系数等物理量随时间的演化.计算结果分别与Camac和Wray的实验相符.计算显示,在激波作用的后期,有准稳态的振动能级布居分布.计算结果显示,Park模型低估了非平衡离解速率系数,Hansen模型则高估了非平衡离解速率系数.

Polaron effects on the optical absorptions in asymmetrical semi-parabolic quantum wells

The linear and nonlinear optical absorptions considering the weak-coupling electron-LO-phonon interaction in asymmetrical semiparabolic quantum wells are theoretically investigated. The numerical results for the typical GaAs/AlxGa1-xAs material show that the factors of Al content x, the relaxation time and the photon energy have great influence on the optical absorption coefficients. Moreover, the theoretical values of the optical absorptions are more than a factor of 2-3 higher than the one in the structure without considering the electron-LO-phonon interaction by calculating. (C) 2007 Elsevier B.V. All rights reserved.

半导体激光器热弛豫时间测试技术研究

利用脉冲工作状态下半导体激光器激射光谱随结温升高发生红移的原理，用Boxcar扫描在一定波长下的半导体激光器光功率随脉冲时间的变化信号，测得其时间分辨光谱；根据对应的峰值光功率出现时刻随波长变化的曲线，计算得到热弛豫时间参量值．利用此方法对一种半导体激光器进行了测试，得到其热弛豫时间为1．2ms．

Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

The femtosecond pump-probe technique was used to study the carrier dynamics of amorphous Ge2Sb2Te5 films. With carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. On the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. The relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). A possible interpretation of the relaxation processes is elucidated. In the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. It is followed by a recombination process of trapped carriers at later delay time. (c) 2007 American Institute of Physics.

Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 rum at the bias current of 500 mA. The influences of them electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin-relaxation time shows several peaks with increasing the Fermi wave vector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin-relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

Exciton spin splitting in ultrathin InAs layers

Unique spin splitting behaviors in ultrathin InAs layers, which show very different spin splitting characteristics between the InAs monolayer (ML) and submonolayer (SML) have been observed. While distinct spin splitting is observed in an InAs ML, no visible spin splitting is found in a 1/3 ML InAs SML. In addition, the spin relaxation time in the 1/3 ML InAs is found to be much longer than that in the 1 ML sample. These results are in good agreement with the theoretical prediction that the interexcitonic exchange interaction plays a dominant role in energy splitting, while the intraexciton exchange interaction controls the spin relaxation. (c) 2007 American Institute of Physics.

Nonlinear optical response of nc-Si-SiO2 films studied with femtosecond four-wave mixing technique

Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. the off-resonant third-order nonlinear susceptibility chi((3)) is observed to be 1.3 x 10(-10) esu at 800 nm. The relaxation time of the film is fast as short as 50 fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.

Exciton dynamics in self-organized InAs/GaAs quantum dots

Using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized InAs/GaAs quantum dots (QDs). It is found that the exciton lifetime in self-organized InAs/GaAs QDs is around 1 ns, almost independent of InAs layer thickness. The temperature dependence of the exciton lifetime varies from sample to sample, but no obvious experimental evidence was found that the lifetime is related to the delta-function of density of states in QDs. We have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the QDs.

High-frequency ferromagnetic resonance on ultrafine cobalt particles

We report on high-frequency (300-700 GHz) ferromagnetic resonance (HF-FMR) measurements on cobalt superparamagnetic particles with strong uniaxial effective anisotropy. We derive the dynamical susceptibility of the system on the basis of an independent-grain model by using a rectangular approach. Numerical simulations give typical line shapes depending on the anisotropy, the gyromagnetic ratio, and the damping constant. HF-FMR experiments have been performed on two systems of ultrafine cobalt particles of different sizes with a mean number of atoms per particles of 150 +/- 20 and 310 +/- 20. In both systems, the magnetic anisotropy is found to be enhanced compared to the bulk value, and increases as the particle size decreases, in accordance with previous determinations from magnetization measurements. Although no size effect has been observed on the gyromagnetic ratio, the transverse relaxation time is two orders of magnitude smaller than the bulk value indicating strong damping effects, possibly originating from surface spin disorders.