Optical Diagnostic and Modeling Solution Growth Process of Sodium Chlorate Crystals

Both a real time optical interferometric experiment and a numerical simulation of two-dimension non-steady state model were employed to study the growth process of aqueous sodium chlorate crystals. The parameters such as solution concentration distribution, crystal dimensions, growth rate and velocity field were obtained by both experiment and numerical simulation. The influence of earth gravity during crystal growth process was analyzed. A reasonable theory model corresponding to the present experiment is advanced. The thickness of concentration boundary layer was investigated especially. The results from the experiment and numerical simulation match well.

Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet

A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

Determination Ofinterfacial Mechanical Parameters For An Al/Epoxy/Al2O3 System Byusing Peel Test Simulations

Peel test measurements and simulations of the interfacial mechanical parameters for the Al/Epoxy/Al2O3 system are performed in the present investigation. A series of Al film thicknesses between 20 and 250 microns and three peel angles of 90, 135 and 180 degrees are considered. Two types of epoxy adhesives are adopted to obtain both strong and weak interface adhesions. A finite element model with cohesive zone elements is used to identify the interfacial parameters and simulate the peel test process. By simulating and recording normal stress near the crack tip, the separation strength is obtained. Furthermore, the cohesive energy is identified by comparing the simulated steady-state peel force and the experimental result. It is found from the research that both the cohesive energy and the separation strength can be taken as the intrinsic interfacial parameters which are dependent on the thickness of the adhesive layer and independent of the film thickness and peel angle.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Dissipative particle dynamics simulation of wettability alternation phenomena in the chemical flooding process

Wettability alternation phenomena is considered one of the most important enhanced oil recovery (EOR) mechanisms in the chemical flooding process and induced by the adsorption of surfactant on the rock surface. These phenomena are studied by a mesoscopic method named as dissipative particle dynamics (DPD). Both the alteration phenomena of water-wet to oil-wet and that of oil-wet to water-wet are simulated based on reasonable definition of interaction parameters between beads. The wetting hysteresis phenomenon and the process of oil-drops detachment from rock surfaces with different wettability are simulated by adding long-range external forces on the fluid particles. The simulation results show that, the oil drop is liable to spread on the oil-wetting surface and move in the form of liquid film flow, whereas it is likely to move as a whole on the water-wetting surface. There are the same phenomena occuring in wettability-alternated cases. The results also show that DPD method provides a feasible approach to the problems of seepage flow with physicochemical phenomena and can be used to study the mechanism of EOR of chemical flooding.

Fast growing mode of stimulated Raman scattering in a pure three-wave process

Stimulated Raman scattering (SRS) of a relativistic laser in plasmas is studied in the framework of the standard equation set of a three-wave process. As far as every wave involved in the process is concerned, its evolution has two aspects: time-dependent amplitude and time-dependent frequency. These two aspects affect each other. Strict analysis and numerical experiment on the full three-wave equation set reveal that a fast growing mode of the instability, which could reach a balance or saturation point during a period far shorter than an estimation based on conventional analysis, could take place in a standard three-wave process without coupling with a fourth wave. This fast growing mode is found to stem from the constraint set by the background density on the amplitude of the driven Langmuir wave. The effect of various parameters on the development of the SRS instability is studied by numerical calculation of the history of the instability in different cases. (c) 2007 American Institute of Physics.

Photobleaching process of xanthene dyes initiated by N-phenylglycine in the polyvinylalcohol film

The parameters such as quantum yield and molar absorption coefficients of the photoinitiator that are responsible for holographic sensitivity in photopolymer material are investigated with a single beam exposure experiment. The influence of exposure intensity, the concentrations of N-phenylglycine and dye on the photobleaching process of xanthenes dyes are presented. In addition, the effect of diphenyliodonium hexafluorophosphate salt on the quantum yield and molar absorption of xanthene dyes is studied. (c) 2005 Elsevier Ltd. All rights reserved.

Modeling and optimization of semiconductor manufacturing process with neural networks

A neural network-based process model is proposed to optimize the semiconductor manufacturing process. Being different from some works in several research groups which developed neural network-based models to predict process quality with a set of process variables of only single manufacturing step, we applied this model to wafer fabrication parameters control and wafer lot yield optimization. The original data are collected from a wafer fabrication line, including technological parameters and wafer test results. The wafer lot yield is taken as the optimization target. Learning from historical technological records and wafer test results, the model can predict the wafer yield. To eliminate the "bad" or noisy samples from the sample set, an experimental method was used to determine the number of hidden units so that both good learning ability and prediction capability can be obtained.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

Effect of pulse heating parameters on the microscale bubble dynamics at a microheater surface

We study the effects of pulse heating parameters on the micro bubble behavior of a platinum microheater (100 mu m x 20 mu m) immersed in a methanol pool. The experiment covers the heat fluxes of 10-37 MW/m(2) and pulse frequencies of 25-500 Hz. The boiling incipience is initiated at the superheat limit of methanol, corresponding to the homogeneous nucleation. Three types of micro boiling patterns are identified. The first type is named as the bubble explosion and regrowth, consisting of a violent explosive boiling and shrinking, followed by a slower bubble regrowth and subsequent shrinking, occurring at lower heat fluxes. The second type, named as the bubble breakup and attraction, consists of the violent explosive boiling, bubble breakup and emission, bubble attraction and coalescence process, occurring at higher heat fluxes than those of the first type. The third type, named as the bubble size oscillation and large bubble formation, involves the initial explosive boiling, followed by a short periodic bubble growth and shrinking. Then the bubble continues to increase its size, until a constant bubble size is reached which is larger than the microheater length. 

Study on methane hydration process in a semi-continuous stirred tank reactor

The methane hydration process is investigated in a semi-continuous stirred tank reactor. Liquid temperatures and reaction rates without stirrer are compared with those occurring with stirrer, while at the same time better stirring conditions of the methane hydration process are given by the experiments. Some basic data of fluid mechanics, for example, stirring Reynolds number, Froucle number and stirrer power, are calculated during the methane hydration process, which can be applied to evaluate stirrer capacity and provide some basic data for a scaled up reactor. Based on experiment and calculations in this work, some conclusions are drawn. First, the stirrer has great influence on the methane hydration process. Batch stirring is helpful to improve the mass transfer and heat transfer performances of the methane hydration process. Second, induction time can be shortened effectively by use of the stirrer. Third, in this paper, the appropriate stirring velocity and stirring time were 320 rpm and 30 min, respectively, at 5.0 MPa, for which the storage capacity and reaction time were 159.1 V/V and 370 min, respectively. Under the condition of the on-flow state, the initial stirring Reynolds number of the fluid and the stirring power were 12,150 and 0.54 W, respectively. Fourth, some suggestions, for example, the use of another type of stirrer or some baffles, are proposed to accelerate the methane hydration process. Comparing with literature data, higher storage capacity and hydration rate are achieved in this work. Moreover, some fluid mechanics parameters are calculated, which can provide some references to engineering application.

Time-resolved synchrotron SAXS observations on sheared syndiotactic poly(propylene) crystallization process

The in situ crystallization kinetics of syndiotactic poly(propylene) (sPP) has been investigated by synchrotron small-angle X-ray scattering (SAXS). The structure evolutions during the isothermal crystallization of sPP with different shear rates have been observed. The results show that shear accelerates the process of crystallization kinetics. Even under low shear rate, the lamellae can be distinctly oriented. In contrast, the lamellar parameters such as the long period, lamellar thickness, and the scattering invariant 0 can change obviously only under high shear rate.

Oriented growth and luminescence of ZnO : Eu films prepared by sol-gel process

A series of Eu3+-doped ZnO films have been prepared by a sol-gel method. These films were characterized by X-ray diffraction (XRD) and photoluminecent spectra (PL). Effects of synthetic parameters, such as annealing atmosphere, temperature and concentration of doped ions, on the highly oriented crystal growth were studied in detail. The crystalline structures of films annealed in vacuum have a wurtzite symmetry with highly c-axis orientation. A characteristic D-5(0) -> F-7(J)(J = 1, 2, 3 and 4) red emission is observed due to energy transfer from the ZnO host to the doped Eu3+ in the c-oriented ZnO films.

In-situ circular dichroism spectroelectrochemical study on the redox process of norepinephrine

The redox process of norepinephrine in pH = 7.0 phosphate buffer solution at glassy carbon electrode was studied by circular dichroism spectroelectrochemistry with a long optical path thin layer cell. The spectroelectrochemical data were analyzed with the double logarithm method. According to the double logarithsmic plot results, the mechanism of electrochemical oxidation of norepinephrine is an irreversible process with a subsequent chemical reaction (EC) to form a norepinephrinechrome. Both of norepinephrinequinone and norepinephrinechrome are followed E mechanisms. Some kinetic parameters about the electrochemical process, i.e. the electron transfer coefficient and number of electron transfered, alpha n = 0.38, the formal potential, E-1(0)' = 0.20 V, the standard heterogenous electron transfer rate constant, k(1)(0) = 1.2 x 10(-4) cm s(-1) for the oxidation of norepinephrine, alpha n = 0.37, E-2(0)' = 0.25 V and k(2)(0) = 4.4 x 10(-5) cm . s(-1) for the reduction of norepinephrinequnone and alpha n = 0.33, E-3(0)' = -0.25V and k(3)(0) = 1.1 x 10(-4) cm . s(-1) for the reduction of norpinephrinechrome, were also estimated.

A double logarithmic method for studying the adsorption effects in an irreversible electrochemical process

The adsorption of an electroinactive product greatly influences an irreversible electrochemical reaction in three ways, including self-block, self-inhibition, and self-acceleration, and changes not only the heterogeneous electron-transfer rate constant but also the modified formal potential and electron-transfer coefficient of the electrochemical reaction. In order to study these adsorption effects, a double logarithmic method was suggested to be used in processing the potential-controlled thin layer spectroelectrochemical data. The result shows three types of double logarithmic plots for three kinds of adsorption effects. These double logarithmic plots can be a diagnostic criterion of the adsorption effects and enable us to determine some thermodynamic and kinetic parameters. The combination of nonlinear regression with double logarithmic method is a convenient way to examine the suggested mechanism and to extract more information from the limited experimental data. Some examples are given to test the theoretical results. (C) 1999 The Electrochemical Society. S0013-4651(98)05-012-5. All rights reserved.