Stability of GaAs photocathodes under different intensities of illumination

The photocurrent curves of reflection-mode GaAs photocathodes as a function of time, when were illuminated by white light with an intensity of 0, 33 and 100 Ix, respectively, were measured using a multi-information measurement system. The calculated lifetimes of cathodes are 320, 160 and 75 min, respectively, showing that the stability of cathodes degraded with the increase of light intensity. The lifetime of cathode, illuminated by white light with an intensity of 100 Ix, while no photocurrent was being drawn during the illumination, was 100 min. Through comparison, we found that the influence of illumination on cathodes stability is greater than that of photocurrent. The quantum-yield curves of cathodes as a functions of time, when illuminated by white light with an intensity of 33 Ix, were measured also. The measured results show that the shape of the yield curves changes with increasing illumination time due to the faster quantum-yield degradation rate of low energy photons. Based on the revised quantum-efficiency equations for the reflection-mode cathodes, the variation of yield curves are analyzed to be due to the intervalley diffusion of photoelectrons and the evolution of the surface potential barrier profile of the photocathodes during degradation process.

The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity

A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. Accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 Elsevier B.V. All rights reserved.

Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on alpha-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

Oscillation flow induced by underwater supersonic gas jets

This paper describes an experimental study on the oscillation flow characteristics of submerged supersonic gas jets issued from Laval nozzles. The flow pattern during the jet development and the jet expansion feedback phenomenon are studied using a high-speed camera and a pressure measurement system. The experimental results indicate that along the downstream distance, the jet has three flow regimes: (1) momentum jet; (2) buoyant jet; (3) plume. In the region near the nozzle exit a so-called bulge phenomenon is found. Bulging of the jet occurs many times before the more violent jet expansion feedback occurs. During the feedback process, the jet diameter can become several times that of the original one depending on the jet Mach number. The frequencies of the jet bulging and the jet expansion feedback are measured.

基于电路复用结构的NIM\ECL\TTL电平适配器

In this paper,a multi-functional adapter circuit which can be used to accomplish level adaptation between the NIM,TTL,ECL levels will be described briefly.This circuit is designed based on the multiple-using structure of circuit unit.It is signal-width NIM standard module.The module is used for level adaptation between the different digital signals in the measurement system of nuclear physics experiments.中文文摘：基于单元电路复用结构,设计了NIM、ECL、TTL电平多功能适配器,介绍了电路复用结构和单元电路的设计原理。该插件用于核物理实验测量系统中不同逻辑电平的数字信号的适配与转换。

CSR中磁铁线圈温度测量系统的研制

本论文主要讲述了一种服务于CSR磁铁保护的多路（64路）磁铁线圈温度测量系统。根据CSR工程的要求，该温度测量系统能对磁铁线圈中的数百个点进行测温，并达到±1℃的测温精度。文中详细阐述了该系统软硬件的研究、设计和实现。该测量系统中，主控芯片采用了美国德州仪器公司的16位低功耗单片机MSP430F149，论文中详细介绍了该单片机的结构特性、功能和基于该单片机的硬件组成和软件设计。硬件主要包括前端信号处理电路、A/D转换电路、VCO电路、液晶显示电路、数字键盘电路、以及为实现远程实时监测而采用的RS-485串行通信电路。在软件设计方面，利用IAR公司的C430 为开发工具 ，采取模块化设计方法，用C语言编制了温度测量系统的主控程序以及液晶驱动、键盘驱动、串行通信等程序模块，并配合硬件系统进行了多次调试（论文软件设计中给出了部分源程序清单）。论文最后讨论了适用于CSR现场工作环境的软硬件抗干扰措施及其实现。通过试验，该温度测量系统表现良好，满足设计要求。其特点是低成本、低功耗、可靠性高、并可根据不同需要应用于多种工程检测系统中

CSR闭轨测量系统的建立

本文给出用于CSR系统的闭轨测量系统，内容包括shoe-box类型的位置探针介绍、宽带信号处理系统介绍、实验室刻度结果和在线测试结果。论文首先介绍了基于不同工作原理的几种位置探针和信号处理方式，探针包括容式探针、感式探针、条带型探针和wave-guide类型。考虑到CSR系统的实际情况，确定CSR系统的闭轨测量系统选用容式探针以及宽带信号处理系统。比较常用的几种容式探针的性能，可以看出linear-cut类型的shoe-box位置探针在灵敏度和线性方面较为理想，因此选定shoe-box位置探针作为CSR系统的位置探针。电子学系统采用分路信号处理，信号通过宽带低噪声放大器放大之后直接使用采样率为60MS/s的采样卡采样，数字信号的处理使用软件作离线处理，方便灵活且各种功能容易扩展。接下来给出了实验室标定和在线测量的结果。实验室测试结果表明，在实验室噪声水平下，在整个CSR系统束流回旋频率范围内，由于频率的不同对位置测量带来的误差小于40μm；而由于信号强度变化带来的误差小于20μm；在固定频率条件下系统的分辨率好于20μm。在线测量结果表明，系统的分辨率好于20μm；系统除了能够实现闭轨测量以外，还可以实现对束团的监测、tune值的测量以及频率分散的测量。在此基础之上的其他工作，比如闭轨反馈控制系统、逐束团位置测量以及束团中心的横向相空间测量正在进行之中。最后，论文介绍了作者在博士论文期间所作的其他一些工作，包括束运线上的环形位置探针、CSR系统中的单丝剖面测量系统以及HIRFL浅层肿瘤治疗系统中的束诊控制系统

CSR磁场测量系统的建立及运行

CSR磁场测量系统是国家大科学工程兰州重离子加速器冷却储存环（HIRFL-CSR）的一个重要组成部分，它的建立对工程建设有着重要的现实意义。磁场测量数据是加速器束流动力学模拟、磁铁准直安装以及调束参数预置的根本依据，准确可靠的磁场参数测量更是加速器运行的一个重要保证。本论文从磁场测量的基本理论出发介绍了用于加速器磁铁各个方面参数测量的基本方法，并根据CSR对于磁铁参数的具体要求，结合国内外许多同类实验室的经验，制定了CSR磁铁测量方案；组建了三套用于不同目的的测量系统：Hall点测系统、积分测量系统和谐波测量系统。文中介绍了各测量系统的具体构成和运行模式，并对系统中主要元件的结构和参数设计以及实际加工工艺和质量检测的情况作了详细论述。通过理论分析和实际测量，讨论了CSR测磁系统中各种测量探头系统误差产生的原因和大小，以及测量中使用到的电子设备的误差和稳定性。在系统建成后，通过对不同环境下同一数据的长期重复性测量，认为各个测量系统是具有长期稳定性和重复性的。论文最后介绍了新组建的测磁系统在CSRJn注入线二极磁铁和四极磁铁的测量方面的实际应用，在对测磁数据结果分析的基础上讨论了CSR原型磁铁的设计和加工过程中存在的问题，以及CSRIn磁铁加工中应做出的改进和注意事项。

网络测量技术研究与系统实现

近年来，计算机网络迅速发展，各种网络应用层出不穷，各种网络性能面临挑战。对网络流量进行识别和分类，对网络性能进行测量和分析，已成为计算机网络的一个新兴课题。网络测量能够了解网络的行为特征和性能特征等，是对网络进行规划建设和优化改造的基础。 本文以当前网络测量实际应用为背景，介绍了网络测量技术的发展、分类和商用产品，设计并实现了一种纯软件开发的、扩展性强、有实际应用价值的网络测量系统，并对实现过程中所涉及到的网络流量测量和网络性能测量关键技术作了详细描述。 本文工作主要有如下贡献： 1、提出了以纯软件方法开发网络测量系统的方案； 2、设计了网络测量系统的系统结构及各模块之间的接口； 3、设计并实现了网络流量测量子系统，能够监测和分析从数据链路层到应用层等不同协议层次的流量组成和变化趋势，以及主机对之间和服务器负载上的应用类型和流量，提供实时的和历史的流量统计分析功能，可协助分析和定位网络异常和网络瓶颈； 4、设计并实现了网络性能测量子系统，能够测量网络层端到端的跳数、丢包率、往返延迟、往返延迟抖动等参数，以及HTTP、TELNET、FTP和EMAIL等常见网络业务的应用层性能，协助用户分析影响网络性能的原因。

Selective and specific detection of sulfate-reducing bacteria using potentiometric stripping analysis

A fast, sensitive and reliable potentiometric stripping analysis (PSA) is described for the selective detection of the marine pathogenic sulfate-reducing bacterium (SRB). Desulforibrio caledoiensis. The chemical and electrochemical parameters that exert influence on the deposition and stripping of lead ion, such as deposition potential, deposition time and pH value were carefully studied. The concentration of SRB was determined in acetate buffer solution (pH 5.2) under the optimized condition (deposition potential of -1.3 V. deposition time of 250 s, ionic strength of 0.2 mol L-1 and oxidant mercury (II) concentration of 40 mg L-1). A linear relationship between the stripping response and the logarithm of the bacterial concentration was observed in the range of 2.3 x 10 to 2.3 x 10(7) cfu mL(-1). In addition, the potentiometric stripping technique gave a distinct response to the SRB, but had no obvious response to Escherichia coli. The measurement system has a potential for further applications and provides a facile and sample method for detection of pathogenic bacteria. (C) 2010 Elsevier B.V. All rights reserved.

基于非线性修正的多线阵像机的空间定位

介绍了一种基于多线阵像机构成的视觉空间定位系统.该系统利用线阵像机的快速性与高分辨率的特点,采用了非平行空间投影面相交定位的基本原理,利用几何投影关系定位求解的方法,实现了多线阵像机视觉系统的空间定位.并提出了多线阵像机的神经网络非线性修正方法,使修正后的PSD能在较宽的位置范围内输出高线性度的信号.实验结果表明,基于非线性修正的多线阵像机位姿测量系统简化了立体视觉空间定位计算的复杂性,在定位精度、定位范围和采样速度上均达到了良好效果.

轨迹测量系统中特征点检测技术研究

针对机器人直线轨迹测量系统中的图像处理鲁棒性问题,开展线结构光光条图像的特征点识别技术研究,提出了一种基于种子点拟合和直线生长的直线分割方法,很好地解决了各种条件下各段拟合直线的端点自动获取问题,提高了系统的环境适应性和测量精度.实验表明,该方法具有很好的鲁棒性.