26 resultados para Out-of-plane


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The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15(n), respectively, for n-dimensional nano-structures (n = 1,2,3). Our proposals can be widely applied in the design of various nano-structure devices.

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The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

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Effects of deposition layer position and number/density on local bending of a thin film are systematically investigated. Because the deposition layer interacts with the thin film at the interface and there is an offset between the thin film neutral surface and the interface, the deposition layer generates not only axial stress but also bending moment. The bending moment induces an instant out-of-plane deflection of the thin film, which may or may not cause the so-called local bending. The deposition layer is modeled as a local stressor, whose location and density are demonstrated to be vital to the occurrence of local bending. The thin film rests on a viscous layer, which is governed by the Navier-Stokes equation and behaves like an elastic foundation to exert transverse forces on the thin film. The unknown feature of the axial constraint force makes the governing equation highly nonlinear even for the small deflection case. The constraint force and film transverse deflection are solved iteratively through the governing equation and the displacement constraint equation of immovable edges. This research shows that in some special cases, the deposition density increase does not necessarily reduce the local bending. By comparing the thin film deflections of different deposition numbers and positions, we also present the guideline of strengthening or suppressing the local bending.

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The angular momentum polarization and rotational state distributions of the H-2 and HCl products from the H + HCl reaction are calculated at a relative translational energy of 1.6 eV by using quasiclassical trajectories on two potential energy surfaces, one from G3 surface [T.C. Allison et al., J. Phys. Chem. 100 (1996) 13575], and the other from BW2 surface [W. Bian, H.-J. Werner, J. Chem. Phys. 112 (2000) 220]. Product rotational distributions obtained on the G3 potential energy surface (PES) are much closer to the experimental results (P.M. Aker et al., J. Chem. Phys. 90 (1989) 4795; J. Chem. Phys. 90 (1989) 4809) than the distributions calculated on the BW2 PES. The distributions of P(phi(r)) for the H-2 and HCl products obtained on the G3 PES are similar, whereas the rotational alignment effect of the H-2 product is stronger than that of the HCl product. In contrast to the polarization distributions obtained on the G3 PES, the rotational alignment effect of the two products calculated on the BW2 PES is similar. However, the abstraction reaction is dominated by out-of-plane mechanisms, while the exchange reaction is dominated by in-plane mechanisms. The significant difference of the product rotational polarization obtained on the G3 and BW2 PESs implies that the studies of the dynamical stereochemistry can provide a sensitive test for the accuracy of the PES. (C) 2002 Elsevier Science B.V. All rights reserved.

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The structural evolution of a single-layer latex film during annealing was studied via grazing incidence ultrasmall-angle X-ray scattering (GIUSAXS) and atomic force microscopy (AFM). The latex particles were composed of a low-T-g (-54 degrees C) core (n-butylacrylate, 30 wt %) and a high-T-g (41 degrees C) shell (t-butylacrylate, 70 wt %) and had an overall diameter of about 500 nm. GIUSAXS data indicate that the q(y) scan at q(z) = 0.27 nm(-1) (out-of-plane scan) contains information about both the structure factor and the form factor. The GIUSAXS data on latex films annealed at various temperatures ranging from room temperature to 140 degrees C indicate that the structure of the latex thin film beneath the surface changed significantly. The evolution of the out-of-plane scan plot reveals the surface reconstruction of the film. Furthermore, we also followed the time-dependent behavior of structural evolution when the latex film was annealed at a relatively low temperature (60 degrees C) where restructuring within the film can be followed that cannot be detected by AFM, which detects only surface morphology.

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The infrared spect ra of N-n-(4-nitrophenyl)azophenyloxyalkyldiethanolamines (Cn) are examined in the range of 4000-400 cm(-1) at different temperatures and the assignment of the fundamental vibrations given. Based on (1) the localization of the broad absorption band at 3456 cm(-1), and (2) attribution of the associated OH bands centred at 1410-1390, 1100, and 650-634 cm(-1) to, respectively delta OH deformation, nu C-O stretching and gamma OH out-of-plane bending, intermolecular hydrogen bonding between OH groups in the crystalline, liquid crystalline and isotropic states is proposed. By considering the results of FTIR, WAXD and DSC measurements, the molecular arrangement of C10 in its smectic A phase as consisting of hydrogen bonding and strong interaction between dipolar groups (NO,) is proposed. This may explain the high stability and high orientational ordering property of Cn compounds in the liquid crystalline state compared with that of n-bromo-1-[4-(4-nitrophenyl)azophenyl]oxyalkanes (Bn).

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引入角度偏差、位移偏差作为拼接光栅系统的物理参数,定义了拼接光栅的孔径函数,利用傅里叶角谱理论研究了高斯脉冲入射拼接光栅压缩器后的远场分布特性。研究表明;出射脉冲仍然是高斯型脉冲,但包络中心发生偏移,偏移量由角度偏差量和光束口径决定;位移偏差引入的相位随着拼接光栅压缩器传递,其对远场焦斑的影响,取决于每片子光栅的非整数倍光栅常数的横向位移偏差和纵向位移偏差的综合作用。通过数值计算得到了各维偏差对阵列光栅压缩器空域特性的影响,计算表明:光栅面外角度偏差(俯仰左右)和条纹平行度偏差都必须控制在1μrad以内,

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By introducing the scattering probability of a subsurface defect (SSD) and statistical distribution functions of SSD radius, refractive index, and position, we derive an extended bidirectional reflectance distribution function (BRDF) from the Jones scattering matrix. This function is applicable to the calculation for comparison with measurement of polarized light-scattering resulting from a SSD. A numerical calculation of the extended BRDF for the case of p-polarized incident light was performed by means of the Monte Carlo method. Our numerical results indicate that the extended BRDF strongly depends on the light incidence angle, the light scattering angle, and the out-of-plane azimuth angle. We observe a 180 degrees symmetry with respect to the azimuth angle. We further investigate the influence of the SSD density, the substrate refractive index, and the statistical distributions of the SSD radius and refractive index on the extended BRDF. For transparent substrates, we also find the dependence of the extended BRDF on the SSD positions. (c) 2006 Optical Society of America.

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By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, a nonsuperconducting parent compound of the iron pnictides and chalcogenides, with a transition temperature higher than that of its superconducting isostructural counterpart FeSe. For these tensile stressed films, superconductivity is accompanied by a softening of the first-order magnetic and structural phase transition, and also, the in-plane extension and out-of-plane contraction are universal in all FeTe films independent of the sign of the lattice mismatch, either positive or negative. Moreover, the correlations were found to exist between the transition temperatures and the tetrahedra bond angles in these thin films.

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In the present paper, it is shown that the zero series eigenfunctions of Reissner plate cracks/notches fracture problems are analogous to the eigenfunctions of anti-plane and in-plane. The singularity in the double series expression of plate problems only arises in zero series parts. In view of the relationship with eigen-values of anti-plane and in-plane problem, the solution of eigen-values for Reissner plates consists of two parts: anti-plane problem and in-plane problem. As a result the corresponding eigen-values or the corresponding eigen-value solving programs with respect to the anti-plane and in-plane problems can be employed and many aggressive SIF computed methods of plane problems can be employed in the plate. Based on those, the approximate relationship of SIFs between the plate and the plane fracture problems is figured out, and the effect relationship of the plate thickness on SIF is given.