57 resultados para OLEDs


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有机电致发光器件(organiclight-emittingdiodes,OLEDs)由于具有全色、低压直流驱动、视角广、高效率、发光颜色丰富等优点,在平板大面积显示领域具有广阔的应用前景,已引起广泛的重视.至目前为止,各式各样多层结构的器件、新的电致发光功能材料在深入研究,各种发光颜色甚至全色器件都已经相继报道.探索新材料,优化器件结构是目前电致发光研究的主要课题.该文主要包括以下几方面工作:(1)稀土配合物真空蒸镀所成膜的形态结构;(2)稀土配合物中第二配体的引入对稀土配合物电致发光性能的影响;(3)稀土配合物溶解性的改善;(4)铝配合物与聚合物PVK基激复合物对电致发光器件性能的影响及基激复合物的证实;(5)高效吡唑啉生物的合成及其电致发光器件的设计.通过深入系统的研究,取得了创新性的结果.

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有机电致发光器件(organic light-emitting diodes, OLEDs)由于具有全色、低压直流驱动、视角广、高效率和易于制备大屏幕等优点,在平板显示领域具有广阔的应用前景,已引起世界范围内科技界和企业界的广泛重视。稀土配合物作为发光及载流子传输层材料,具有窄带发射和发射波长分布范围广的特点,有利于实现高的色纯度。然而,有机电致发光的机理还未完全弄清楚,稀土配合物电致发光器件距离实际应用还比较远,需要进一步进行研究。本论文研究了Tb~(3+)、Eu~(3+), Sm~(3+)配合物的光致发光和电致发光性质,制备了绿色、红色和橙色电致发光器件,并对稀土配合物的电致发光机理进行了探讨。对于试配合物,以acac为第一配体,研究了第二配体AAP和bath对配合物和器件发光性能的影响并对器件的优化进行了讨论;以Tb(acac)_3bath为发光中心,发现电致发光中~5D_4→~7F_5跃迁相对~5D_4→~7F_5跃迁的增强现象;以Tfacac为第一配体,首次讨论了F取代H对于配体的三重态能级的降低和对配合物以及电致发光器件发光强度的增强作用,对于提高稀土配合物电致发光的性能提供了参考依据。对于铺配合物,以Tfacac为第一配体,以phen和bipy为第二配体,制备了红色电致发光器件并进一步验证了F取代H对于配体的三重态能级的降低作用;以HTH为第一配体,国际上首次报道了室温下Eu~(3+)离子的~5D_1→~7F_J的跃迁,并且其强度依赖于驱动电压的强度,光致发光和电致发光的不同表明二者的发光机理有所不同,并对铺配合物电致发光机理进行了讨论;以HTH为第一配体,国际上首次报道了衫配合物的电致发光现象,并且最大得到了21 cd/m~2的发光强度;为了改善稀土β-二酮配合物光稳定性和热稳定性差的缺点,引入了稀土芳香梭酸配合物,并对配体进行了引入长链的化学修饰,提高了配合物在一般有机溶剂中的溶解度,用旋涂法制备的器件的最大发光亮度达到了174 cd/m~2.

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A bipolar transport compound, 2,5-bis(4-(9-(2-ethylhexyl)-9H-carbazol-3-yl) phenyl)-1,3,4-oxadiazole (CzOXD), incorporating both electron-and hole-transport functionalities, was synthesized and fully characterized by H-1 NMR, C-13 NMR, elemental analysis and mass spectrometry. Its thermal, electrochemical, electronic absorption and photoluminescent properties were studied

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The synthesis, structures, photophysics, electrochemistry and electrophosphorescent properties of new red phosphorescent cyclometalated iridium(III) isoquinoline complexes, bearing 9-arylcarbazolyl chromophores, are reported. The functional properties of these red phosphors correlate well with the results of density functional theory calculations. The highest occupied molecular orbital levels of these complexes are raised by the integration of a carbazole unit to the iridium isoquinoline core so that the hole-transporting ability is improved in the resulting complexes relative to those with I-phenylisoquinoline ligands. All of the complexes are highly thermally stable and emit an intense red light at room temperature with relatively short lifetimes that are beneficial for highly efficient organic light-emitting diodes (OLEDs).

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This paper reports a new patterning method, the complementary-structure micropatterning (CSMP) technique, to fabricate the undercut structures for the passive-matrix display of organic light-emitting diodes (OLEDs). First, the polyvinylpyrrolidone (PVP) stripe patterns with a trapeziform cross-section were formed by micromolding in capillaries. Then the photoresist was spin coated on the substrate with the patterned PVP stripes and developed in water.

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It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

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A soluble nonionic surfactant, polyethylenimine 80% ethoxylated (PEIE) solution, was used as the electron injection material in inverted bottom-emission organic light emitting diodes (OLEDs). The transparent PEIE film was formed on indium-tin-oxide cathode by simple spin-coating method and it was found that the electron injection was greatly enhanced. The devices with PEIE electron injection layer had achieved significant enhancement in luminance and efficiency. The maximum luminance reached 47 000 cd/m(2), and the maximum luminance efficiency and power efficiency arrived at 19.7 cd/A and 10.6 lm/W, respectively.

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We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage.

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An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4 cm(2) /Vs and on/off ratio of 10(3) order. The OLED is driven well and emits the brightness as large as 2100cd/m(2) at a current density of 14.6 mu A/cm(2) at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.

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We developed an approach to realize blue, green and red emission from top-emitting white organic light-emitting diodes (OLEDs) through depositing exterior tunable optical films on top of the OLEDs. Three primary colors for full color display including blue, green and red emission are achieved by controlling the wavelength-dependent transmittance of the multilayer optical films overlaid on the emissive layer.

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By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

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有机发光二极管(OLEDs)以其制备工艺简单、成本低、发光颜色可在可见光区内任意调节、易于大面积制作和可制成柔性器件等优点,被认为是未来重要的显示技术之一,在照明光源领域也显示了诱人的应用前景。文章阐述了实现白光OLEDs的方法及其近期进展,并结合自身工作介绍了白光OLEDs的制备方法,最后对白光OLEDs目前存在的问题及其发展趋势进行了讨论。

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A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

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series of a donor-acceptor-donor type of near-infrared (NIR) fluorescent chromophores based on [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) as an electron acceptor and triphenylamine as an electron donor are synthesized and characterized. By introducing pendent phenyl groups or changing the pi-conjugation length in the TQ core, we tuned tile energy levels of these chromophores, resulting in the NIR emission in a range from 784 to 868 nm. High thermal stability and glass transition temperatures allow these chromophores to be used as dopant emitters, which can be processed by vapor deposition for the fabrication of organic light-emitting diodes (OLEDs) having the multilayered structure of ITO/MoO3/NPB/Alq(3):dopant emitter/BCP/Alq(3)/LiF/Al. The electroluminescence spectra of the devices based on these new chromophores cover a range from 748 to 870 nm. With 2 wt % of dopant 1, the LED device shows an exclusive NIR emission at 752 nm with the external quantum efficiency (EQE) as high as 1.12% over a wide range of current density (e.g., around 200 mA cm(-2)).

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novel compound (BCBP) based on the modification of a well-known host material 4,4'-(bis(9-carbazolyl))biphenyl (CBP) through arylmethylene bridge linkage was synthesized, and fully characterized. Its thermal, electrochemical, electronic absorption and photoluminescent properties were studied. A high glass transition temperature (T-g) of 173 degrees C is observed for BCBP due to the introduction of the bridged structure, remarkably contrasting with a low T-g of 62 degrees C for CBP. Furthermore, the bridged structure enhances the conjugation and raises the HOMO energy, thus facilitating hole-injection and leading to a low turn-on voltage in an electroluminescent device. With the device structure of ITO/MoO3/NPB/Ir complex: BCBP/BCP/Alq(3)/LiF/Al, maximum power efficiencies of 41.3 lm/W and 6.3 lm/W for green- and blue-emitting OLED were achieved, respectively.