Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current-voltage (I-V) characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage (C-V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.

NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

A Low Power Dissipation Wide-Band CMOS Frequency Synthesizer for a Dual-Band GPS Receiver

This paper presents a wide tuning range CMOS frequency synthesizer for a dual-band GPS receiver,which has been fabricated in a standard 0.18μm RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45 and 3.14GHz in case of process corner or temperature variation,with a current consumption varying accordingly from 0.8 to 0.4mA,from a 1.8V supply voltage. Measurement results show that the whole frequency synthesizer consumes very low power of 5.6mW working at L1 band with in-band phase noise less than - 82dBc/Hz and out-of-band phase noise about - ll2dBc/Hz at 1MHz offset from a 3. 142GHz carrier. The performance of the frequency synthesizer meets the requirements of GPS applications very well.

Experimental study on energy dissipation in a 1 kW arcjet thruster

As a simple and reliable propulsion system, arcjet thrusters have been used in multiple satellite missions. In order to improve the efficiency of arcjet thrusters, energy dissipation study was carried out in a 1 kW arcjet thruster with pure N2, H2-N2 and H2 as the propellant. Using a 698 nm interference filter, thermal radiation was isolated from arc and plume emissions and the internal nozzle temperature was obtained by converting the thermal radiation signals. Results show that the addition of hydrogen leads to higher nozzle temperature, which is the determining factor for the mode of arc root attachment. At lower nozzle temperatures, constricted type attachment with unstable motions of the arc root was observed, while a fully diffused and stable arc root was observed at elevated nozzle temperatures. Output energy distribution analysis shows that losses from frozen flow and exhaust thermal losses are the main parts in limiting the efficiency of arcjet thrusters.

Experimental study on energy dissipation in a 1 kW arcjet thruster

As a simple and reliable propulsion system, arcjet thrusters have been used in multiple satellite missions. In order to improve the efficiency of arcjet thrusters, energy dissipation study was carried out in a 1 kW arcjet thruster with pure N2, H2-N2 and H2 as the propellant. Using a 698 nm interference filter, thermal radiation was isolated from arc and plume emissions and the internal nozzle temperature was obtained by converting the thermal radiation signals. Results show that the addition of hydrogen leads to higher nozzle temperature, which is the determining factor for the mode of arc root attachment. At lower nozzle temperatures, constricted type attachment with unstable motions of the arc root was observed, while a fully diffused and stable arc root was observed at elevated nozzle temperatures. Output energy distribution analysis shows that losses from frozen flow and exhaust thermal losses are the main parts in limiting the efficiency of arcjet thrusters.

Average property of fragmentation reaction and momentum dissipation induced by halo-nuclei in heavy ion collisions

We study systematically the average property of fragmentation reaction and momentum dissipation induced by halo-nuclei in intermediate energy heavy ion collisions for different colliding systems and different beam energies within the isospin dependent quantum molecular dynamics model (IQMD). This study is based on the extended halo-nucleus density distributions, which indicates the average property of loosely inner halo nucleus structure, because the interaction potential and in-medium nucleon-nucleon cross section in IQMD model depend on the density distribution. In order to study the average properties of fragmentation reaction and momentum dissipation induced by halo-nuclei we also compare the results for the halo-nuclear colliding systems with those for corresponding stable colliding systems with same mass under the same incident channel condition. We find that the effect of extended halo density distribution on the fragment multiplicity and nuclear stopping (momentum dissipation) are important for the different beam energies and different colliding systems. For example the extended halo density distributions increase the fragment multiplicity but decrease the nuclear stopping for all of incident channel conditions in this paper.

Potential Landscape and Flux Framework of Nonequilibrium Networks: Robustness, Dissipation, and Coherence of Biochemical Oscillations

We established a theoretical framework for studying nonequilibrium networks with two distinct natures essential for characterizing the global probabilistic dynamics: the underlying potential landscape and the corresponding curl flux. We applied the idea to a biochemical oscillation network and found that the underlying potential landscape for the oscillation limit cycle has a distinct closed ring valley (Mexican hat-like) shape when the fluctuations are small. This global landscape structure leads to attractions of the system to the ring valley.