Investigation of mode characteristics for microdisk resonators by S-matrix and three-dimensional finite-difference time-domain technique

The mode characteristics of a three-dimensional (3D) microdisk with a vertical refractive index distribution of n(2)/3.4/n(2) are investigated by the S-matrix method and 3D finite-difference time-domain (FDTD) technique. For the microdisk with a thickness of 0.2 mu m. and a radius of 1 mu m, the mode wavelengths and quality factors for the HE7,1 mode obtained by 3D FDTD simulation and the S-matrix method are in good agreement as n(2) increases from 1.0 to 2.6. But the Q factor obtained by the 3D FDTD rapidly decreases from 1.12 X 10(4) to 379 as n2 increases from 2.65 to 2.8 owing to the vertical radiation losses, which cannot be predicted by the proposed S-matrix method. The comparisons also show that quality factors obtained from the analytical solution of two-dimensional microdisks under the effective index approximation are five to seven times smaller than those of the 3D FDTD as n(2) = 1 and R = 1 mu m. (c) 2006 Optical Society of America.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Analysis of the lateral displacement and optical path difference in wide-field-of-view polarization interference imaging spectrometer

The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.

Temperature variation through 2000 years in China: An uncertainty analysis of reconstruction and regional difference

Chinese Academy of Sciences [KZCX2-YW-315, KZCX2-YW-Q1-01]; National Natural Science Foundation of China [40625002, 90502009, 200905006]; Office of Science (BER), U. S. Department of Energy ; EU/FP7 [212250]

Study on the difference of photochromic and thermochromic mechanism of ethylenediamine trimolybdate

Ethylenediamine trimolybdate ((C2H10N2)[Mo3O10], denoted as ENTMo) shows unusual photochromic and thermochromic properties. The color of the white ENTMo compounds becomes reddish brown gradually under UV irradiation, and changes gradually to blue-black upon annealing. XRD patterns and FT-IR spectra verify that the crystal structure of the colored samples is almost unchanged except distortion. UV-vis diffuse reflectance spectra (DRS) and ESR spectra of the photochromic and the thermochromic samples could confirm that there must exist difference between thermochromic and photochromic mechanism.

Impact of spatial resolution and spatial difference accuracy on the performance of Arakawa A-D grids

This paper alms at illustrating the impact of spatial difference scheme and spatial resolution on the performance of Arakawa A-D grids in physical space. Linear shallow water equations are discretized and forecasted on Arakawa A-D grids for 120-minute using the ordinary second-order (M and fourth-order (C4) finite difference schemes with the grid spacing being 100 km, 10 km and I km, respectively. Then the forecasted results are compared with the exact solution, the result indicates that when the grid spacing is I kin, the inertial gravity wave can be simulated on any grid with the same results from C2 scheme or C4 scheme, namely the impact of variable configuration is neglectable; while the inertial gravity wave is simulated with lengthened grid spacing, the effects of different variable configurations are different. However, whether for C2 scheme or for C4 scheme, the RMS is minimal (maximal) on C (D) grid. At the same time it is also shown that when the difference accuracy increases from C2 scheme to C4 scheme, the resulted forecasts do not uniformly decrease, which is validated by the change of the group A velocity relative error from C2 scheme to C4 scheme. Therefore, the impact of the grid spacing is more important than that of the difference accuracy on the performance of Arakawa A-D grid.

Assessing the potential of VEGETATION sensor data for mapping snow and ice cover: a Normalized Difference Snow and Ice Index

The VEGETATION (VGT) sensor in SPOT 4 has four spectral bands that are equivalent to Landsat Thematic Mapper (TM) bands (blue, red, near-infrared and mid-infrared spectral bands) and provides daily images of the global land surface at a 1-km spatial resolution. We propose a new index for identifying and mapping of snow ice cover, namely the Normalized Difference Snow/Ice Index (NDSII), which uses reflectance values of red and mid-infrared spectral bands of Landsat TM and VGT. For Landsat TM data, NDSII is calculated as NDSIITM =(TM3 -TM5)/(TM3 +TM5); for VGT data, NDSII is calculated as NDSIIVGT =(B2- MIR)/(B2 + MIR). As a case study we used a Landsat TM image that covers the eastern part of the Qilian mountain range in the Qinghai-Xizang (Tibetan) plateau of China. NDSIITM gave similar estimates of the area and spatial distribution of snow/ice cover to the Normalized Difference Snow Index (NDSI=(TM2-TM5)/(TM2+TM5)) which has been proposed by Hall et al. The results indicated that the VGT sensor might have the potential for operational monitoring and mapping of snow/ice cover from regional to global scales, when using NDSIIVGT.