Optimizations for the uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals

The formation of the non-uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals is studied in detail. We find that the non-uniformity of the grating is mainly caused by strong ultraviolet light absorption, and the average saturation space-charge field is small and the diffraction efficiency is low as a result of the non-uniformity of the grating. In order to optimize the uniformity of the grating, we propose the recording scheme by using two sensitizing beams simultaneously from the two opposite sides of the crystals. Theoretical simulations and experimental verifications are performed. Results show that the well uniformed grating with high diffraction efficiency can be obtained by using this optimization scheme. (c) 2004 Elsevier B.V. All rights reserved.

Bismuth-activated luminescent materials for broadband optical amplifier in WDM system

New broadband near infrared luminescence covering the whole work windows (1260-1625 nm) of the current wavelength division multiplexing (WDM) system was found from bismuth-activated M2O-Al2O3-SiO2 (M = Li, Na) and Li2O-Ta2O5-SiO2 glasses at room temperature in the case of 808 nm-laser excitation. But the near infrared luminescence mechanism of the bismuth-activated glasses is not well understood up to now. The figure-of-merits of bandwidth and gain of the glasses are better than those of Er3+-doped silicate glasses and Ti3+ doped sapphire, implying they are the promising gain-medium candidates for the broadband amplifiers and the widely tunable laser sources. (c) 2007 Elsevier B.V. All rights reserved.

Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiskers and cones

Planar graphite has been extensively studied by Raman scattering for years. A comparative Raman study of several different and less common non-planar graphitic materials is given here. New kinds of graphite whiskers and tubular graphite cones (synthetic and natural) have been introduced. Raman spectroscopy has been applied to the characterization of natural graphite crystal edge planes, an individual graphite whisker graphite polyhedral crystals and tubular graphite cones. Almost all of the observed Raman modes were assigned according to the selection rules and the double-resonance Raman mechanism. The polarization properties related to the structural features, the line shape of the first-order dispersive mode and its combination modes, the frequency variation of some modes in different carbon materials and other unique Raman spectral features are discussed here in detail.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Real-time non-destructive testing of dynamic holograms in doubly-doped LiNbO3 crystals using phase-conjugate technique

Nankai University

Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Strain gradient theory based on a new framework of non-local model

A new framework of non-local model for the strain energy density is proposed in this paper. The global strain energy density of the representative volume element is treated as a non-local variable and can be obtained through a special integral of the local strain energy density. The local strain energy density is assumed to be dependent on both the strain and the rotation-gradient. As a result of the non-local model, a new strain gradient theory is derived directly, in which the first and second strain gradients, as well as the triadic and tetradic stress, are introduced in the context of work conjugate. For power law hardening materials, size effects in thin metallic wire torsion and ultra-thin cantilever beam bend are investigated. It is found that the result predicted by the theoretical model is well consistent with the experimental data for the thin wire torsion. On the other hand, the calculation result for the micro-cantilever beam bend clearly shows the size effect.

Crystal structure and electrochemical properties of rare earth non-stoichiometric AB(5)-type alloy as negative electrode material in Ni-MH battery

The La0.85MgxNi4.5Co0.35Al0.15 (0.05less than or equal toxless than or equal to0.35) system compounds have been prepared by are melting method under Ar atmosphere. X-ray diffraction (XRD) analysis reveals that the as-prepared alloys have different lattice parameters and cell volumes. The electrochemical properties of these alloys have been studied through the charge-discharge recycle testing at different temperatures and discharge currents. It is found that the La0.85Mg0.25Ni4.5Co0.35Al0.(15) alloy electrode is capable of performing high-rate discharge. Moreover, it has very excellent electrochemical properties as negative electrode materials in Ni-MH battery at low temperature, even at -40degreesC.

New fluorescent dipolar pyrazine derivatives for non-doped red organic light-emitting diodes

Dipolar fluorescent compounds containing electron-accepting pyrazine-2,3-dicarbonitrile and electron-donating arylamine moiety have been designed and synthesized. The optical and electrochemical properties of these compounds can be adjusted by changing pi-bridge length and the donor (D) strength. Organic light-emitting devices based on these compounds are fabricated. Saturated red emission of (0.67, 0.33) and the external quantum efficiency as high as 1.41% have been demonstrated for one of these compounds.

Electrochemical preparation of microelectrodes modified with non-stoichiometric mixed-valent molybdenum oxides

A compact non-stoichiometric molybdenum (VI, V) oxide of blue film was grown on carbon fiber (CF) microelectrode surface be cycling the potential between + 0.2V and - 0.70V in a freshly prepared Na2MoO4 solution containing 5 x 10(-3) mol/L H2SO4. The quantity-of the oxide is controlled by the charge passing the electrode. The electrochemical pretreatment of CF microelectrode not only mises the deposition velocity of molybdenum oxide on CF surface, but also improves greatly the cyclic voltammetric behavior of the molybdenum oxide film prior to the electrodeposition. The cathodic processes are believed to yield the hydrogen molybdenum oxide bronzes HxMoO3(0 < x < 2), or substoichiometric lower molybdenum oxides with the formula MoO3-y(0 < y < 1). The anodic response results from the reversible oxidation of molybdenum bronze/Mo(V) centers [or perhaps Mo(IV) in more reduced coatings], to Mo(VI). Further information was gained about the chemical composition and valent state of Mo from XPS and SEM.

Studies on two coordination polymers [M(mu(4)-pz25dc)](n) (M = Cd or Zn, pz25dc=pyrazine-2,5-dicarboxylato) with three-dimensional pillared-layer three-nodal framework: Synthesis, structural characterization, strong optical non-linearities and optical limiting properties

Two isomorphous new candidates [M(mu(4)-pz25dc)](n) (M = Cd, 1; Zn, 2; pz25dc = pyrazine-2,5-dicarboxylato)for nonlinear optical (NLO) materials have been synthesized hydrothermally and characterized crystallographically as pillared-layer three-nodal frameworks with one four-connected metal nodes and two crystallographically different four-connected ligand nodes. Their optical non-linearities are measured by the Z-Scan technique with an 8 ns pulsed laser at 532 nm. These two coordination polymers both exhibit strong NLO absorptive abilities [alpha(2) = (63 +/- 6) x 10 (12) mW (1) 1, ( 46 +/- 6) x 10 (11) mW (1) 2] and effective self-focusing performance [n(2) = (67 +/- 5) x 10 (18) 1, (13 +/- 3) x 10 (18) m(2) W (1) 2] in 1.02 x 10 (4) 1 and 1.05 x 10 (4) mol dm (3) 2 DMF solution separately. The values of the limiting threshold are also measured from the optical limiting experimental data. The heavy atom effect plays important role in the enhancement of optical non-linearities and optical limiting properties. (C) 2009 Elsevier B. V. All rights reserved.