High rate of chimeric gene origination by retroposition in plant genomes

Retroposition is widely found to play essential roles in origination of new mammalian and other animal genes. However, the scarcity of retrogenes in plants has led to the assumption that plant genomes rarely evolve new gene duplicates by retroposition, de

MITOCHONDRIAL-DNA POLYMORPHISM IN NATURAL-POPULATIONS OF DROSOPHILA-ALBOMICANS(I)

The technique of mtDNA restriction fragments length polymorphism (RFLP) was used to survey the population structure of D. albomicans. Remarkable mtDNA polymorphism has been observed in D. albomicans populations. A total of 34 nucleomorphs were detected from 82 isofemale lines assayed by only 8 restriction enzymes. The cause and the effect of this phenomenon were discussed. As a result, it is suggested that a mechanism which maintains mtDNA diversity exists in this fly, and that the high intra-populational polymorphism could numerically conceal the extent of differentiation between populations. In addition, on the base of restriction maps, it was found that the mtDNA molecule of D. albomicans might be impacted by the selection pressure during its evolution process both on the nucleotide composition and on the functional regions.

A morphologically variant natural population of cyprinids without dorsal fin possibly derived from Mystacoleucus marginatus (Osteichthyes: Teleostes) from the Lancang Jiang River, Yunnan, China

In July 2001, 15 grotesque cyprinid specimens were collected in the Lancangjiang River (of the upper reaches of the Mekong River) in Menglun Town, Xishuanbanna Prefecture, Yunnan Province, PR China. These specimens are characterized by surprising characte

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Changes in grain-size and sedimentation rate of the Neogene Red Clay deposits along the Chinese Loess Plateau and implications for the palaeowind system

IEECAS SKLLQG

On the propagation rate of the chemical waves observed during the course of CO oxidation on a Ag/Pt(110) composite surface

We have analyzed the propagation rate of the chemical waves observed during the course of CO oxidation on a Ag/Pt(I 10) composite surface that were reported in our previous papers [Surf Interface Anal. 2001, 32, 179; J. Phys. Chem. B 2002, 106, 5645]. In all cases, the propagation rate v can be adequately fitted as v = v(0) + D-0/d, in which v(0) and D-0 are constants, and d is the distance between the reaction front of the chemical wave and the boundary from which the chemical wave originates. We propose that the surface species responsible for the formation of the chemical wave comes from two paths: the adsorption of molecules in the gas phase on the surface and the migration from the adjacent surface with different catalytic activity. v(0) corresponds to the contribution from the surface species due to the adsorption, and D-0/d to that of the surface species that migrates from the adjacent surface. The rate equation clearly suggests that the observed chemical wave results from the coupling between adjacent surfaces with different catalytic activities during the course of heterogeneous catalysis. These results, together with our previous reports, provide a good fundamental understanding of spillover, an important phenomenon in heterogeneous catalysis.