Discussions on slip length measurements by microPIV/PTV in microchannels

Fluid transportation in microfluidic system could be benefit from the slip on solid-liquid interface. Slip length on many kinds of hydrophilic/hydrophobic surfaces have been measured recently. The two common-used experimental methods for boundary slip measurement include: (1) surface force measurement, such as surface force apparatus (SFA), atom force microscope (AFM), and (2) velocity measurement, like microPIV/PTV (Particle image velocimetry / Particle tracking velocimetry), total internal reflection velocimetry (TIRV). However, the measured results are rather scattered, larger measured slip lengths were reported by microPIV/PTV experiments. In this paper, we will investigate the deviations of the measured slip length on smooth hydrophilic surface. After measuring detailed velocity profiles very close to hydrophilic glass wall, we give a discussion on the effects influencing the slip measurements.

The near wall velocity measurements in microchannels with different diameter particles by microPIV/PTV. 8th International symposium on PIV

In near wall measurements with microPIV/PTV, whether seeding particles can be effectively used to detect local fluid velocity is a crucial problem. This talk presents our recent measurements in microchannels [1][2]. Based on measured velocity profiles with 200nm and 50nm in pure water, we found that the measured velocity profiles are agreed with the theoretical values in the middle of channel, but large deviations between measured data and theoretical prediction appear close to wall (0.25mm

Measurements Of In Situ Stress And Mining-Induced Stress In Beiminghe Iron Mine Of China

In order to obtain the distribution rules of in situ stress and mining-induced stress of Beiminghe Iron Mine, the stress relief method by overcoring was used to measure the in situ stress, and the MC type bore-hole stress gauge was adopted to measure the mining-induced stress. In the in situ stress measuring, the technique of improved hollow inclusion cells was adopted, which can realize complete temperature compensation. Based on the measuring results, the distribution model of in situ stress was established and analyzed. The in situ stress measuring result shows that the maximum horizontal stress is 1.75-2.45 times of vertical stress and almost 1.83 times of the minimum horizontal stress in this mineral field. And the mining-induced stress measuring result shows that, according to the magnitude of front abutment pressure the stress region can be separated into stress-relaxed area, stress-concentrated area and initial stress area. At the -50 m mining level of this mine, the range of stress-relaxed area is 0-3 m before mining face; the range of stress-concentrated area is 3-55 m before mining face, and the maximum mining-induced stress is 16.5-17.5 MPa, which is 15-20 m from the mining face. The coefficient of stress concentration is 1.85.

Entanglement purification based on photonic polarization parity measurements

We present an entanglement purification protocol for photonic mixed entangled states based on the two-mode polarization nondemolition parity detectors. Without the use of the controlled-NOT (CNOT) operations, the efficiency of our protocol can nearly approach that of the CNOT protocol. The total successful probability of our protocol can be nearly enhanced to the quantity twice as large as that of the linear-optics-based protocol. Besides, our protocol adopts common photon detectors rather than the sophisticated single-photon detectors required in the linear-optics-based protocol.

Entanglement purification with higher error threshold for imperfection of local operations and bell state measurements

We analyse further the entanglement purification protocol proposed by Feng et al. (Phys. Lett. A 271 (2000) 44) in the case of imperfect local operations and measurements. It is found that this protocol allows of higher error threshold. Compared with the standard entanglement purification proposed by Bennett et al. [Phys. Rev. Lett. 76 (1996) 722], it turns out that this protocol is remarkably robust against the influences of imperfect local operations and measurements.

Mixed entanglement distillation by means of parity measurements

We present a mixed entanglement distillation protocol by means of the parity measurement of qubits. Without the use of controlled-NOT (CNOT) operations, the efficiency of our protocol can approach that of the CNOT protocol. In comparison, the total successful probability of our protocol can reach a quantity twice as large as that of the linear optics-based protocol.

Optical levitation measurements with intensity-modulated light beams

Illumination of an optically levitated particle with an intensity-modulated transverse beam induces a transverse vibration of a particle in an optical trap. Based on this, the trapping force of a trap can be measured. Using an intensity-modulated longitudinal levitating beam causes a particle to move vertically, allowing for the determination of some aerodynamic parameters of a particle in air. The principles and the experimental phenomena are described and the initial results are given. (C) 1997 Optical Society of America.

Radius of curvature measurements for laser beams: A simple method

A simple method for measuring the radius of curvature of laser beams is introduced. It has been developed to estimate the astigmatic aberration of a diode laser. Compared with the interferornetry, this method is convenient and straightforward. (c) 2005 Elsevier GmbH. All rights reserved.

Measurements of light scattering from glass substrates by total integrated scattering

A total integrated scattering (TIS) measurement was performed to investigate the surface and volume scattering of K9 glass substrates with low reflectance. Ag layers with thicknesses of 60 nm were deposited on the front and back surfaces of the K9 glass substrates by the magnetron sputtering technique. Surface scattering of the K9 glass substrate was obtained by the TIS measurement of the Ag layers on the assumption that the Ag layers and the K9 substrate had the same surface profile. Volume scattering of the substrates was deduced by subtracting the front and back surface scattering from the total scattering of the substrates. (c) 2005 Optical Society of America.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements

We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.