长白山北坡针叶林下土壤淋洗液的化学性质及土壤特性

为了研究长白山北坡针叶林下土壤淋洗液的化学性质及土壤特性。我们于1987年6-9月，在红松云冷杉林。岳桦云冷杉林标准地，收集了大气降水，林内降水及土壤淋洗液，进行化学分析。结果表明：在红松云冷杉林标准地大气降水经过林冠后产生酸化作用。在红松云冷杉林和岳桦云冷杉林标准地，通过A_0层淋洗液进入土壤A_1层的养分元素（公斤/公顷）为：K 7.4-11.0, Ca 5.7-5.8, Mg 1.1-1.2，有机碳120.4-156.1，全氮1.9-3.4, SO_4-S 1.8-3.6。 A_0+A_1层养分元素的淋失量（公斤/公顷）为：K 1.2-1.6, Ca 2.2-4.6, Mg 0.5-0.9，有机碳35.4-43.9，全氮0.6-0.7, SO_4-S 1.2-2.7。A_0层淋洗液酸度大（pH5.2-5.6）。有机酸含量高（有机碳46-62mg/1）。Fe、Al、Si均从A_1层淋洗下来，并在其下的淀积层（B）淀积。因此，本区针叶林下土壤具有灰化过程的典型特征。土壤分析结果表明：长白山北坡暗针叶带土壤，具有灰化过程，其中杜香落叶松林下土壤具有明显的灰土淀积层，在分类上属灰土。

A Semi-Quantitative Analysis of Essential Micronutrient in Folium Lycii Using Laser-Induced Breakdown Spectroscopy Technique

In this paper, the capabilities of laser-induced break down spectroscopy (LIBS) for rapid analysis to multi-component plant are illustrated using a 1064 nm laser focused onto the surface of folium lycii. Based on homogeneous plasma assumption, nine of essential micronutrients in folium lycii are identified. Using Saha equation and Boltzmann plot method electron density and plasma temperature are obtained, and the irrelative concentration (Ca, Mg, Al, Si, Ti, Na, K, Li, and Sr) are obtained employing a semi-quantitative method.

6He奇异核结构性质及反应动力学研究

本论文通过在兰州放射性束流线（RIBLL）上进行的6He同Si靶和Pb靶反应实验测量得到了6He与Si靶、Pb靶反应总截面和去除双中子截面以及6He与Si靶、Pb靶反应弹核碎裂产生4He碎片的纵向动量分布。采用能够很好描述正常核反应总截面的半经验的Shen公式计算了4，6 He同Be，C，Al，Si靶的反应总截面。对于4He，从低能到高能理论计算和实验数据符合很好。但是对于6He，理论计算和实验数据符合不好。通过SHF理论、RMF理论、RDDH理论、各种核子密度分布形式（2PHO-tyPe，HO-tyPe，2PFM-tyPe及新提出的修正的费米密度分布MFM-type）计算出6He的各种密度分布（包括晕核密度、皮核密度及正常核密度），带入Glotlber模型计算了6He同Be，C，Al，Si靶的反应总截面以及双中子去除截面，只有使用晕核密度理论计算才能够很好地符合实验数据，进一步证实6He具有双中子晕核结构，确定其基本构型。比较了轻靶（Si革巴）和重靶（Pb靶）电磁离解效应刘一反应总截面和去除双中子截面的影响，重靶电磁离解效应明显。采用能够很好描述稳定核的动量分布宽度的Goldllaber理论、Morrissey经验公式、W.A.Friedman的重离子弹核碎裂模型，以及Lise小组发展的Lise程序，计算了6He与Si靶和Pb靶反应弹核碎裂产生的4He碎片的纵向动量分布，也同样证实了6He具有双中子晕核结构。论文最后，利用同位旋相关的Boltzmann-Langevin方程（IBLE）计算稳定核4He和奇异核6He同c靶的反应系统来研究6He反应动力学特性，研究反应产生的核素产生截面，以及4，5 He产生截面随碰撞参数的变化。

添加元素对AB_2型Laves相合金电化学性能的影响

比较系统地研究了 AB2 型 Laves相合金 Zr0 .9Ti0 .1Ni0 .1Mn0 .7V0 .3 M0 .1( M=None,Ni,Mn,V,Co,Cr,Al,Fe,Mo,Si,C,Zn,Cu和 B)的相结构和电化学性能以及高温和低温放电性能等 .结果表明 ,1 4种合金均具有六方 C1 4型 Laves相的主相晶体结构 ,同时 ,含有少量立方 C1 5型 Laves相和一些由 Zr.9Ni11及 Zr Ni组成的非 Laves相 ;添加 V和 Mn可提高 AB2 合金的放电容量 ;添加 B和 Mn则显著提高了 AB2 合金的高倍率放电性能和低温放电容量 ;添加 Al,C,Si和 Co对合金电极的循环稳定性改善明显 ;而 Mn,Ni,V,Fe,Cu,Mo和 B等却不同程度地降低了循环稳定性 ;添加 Si,Mo,V,Cr和 Al可明显改善合金电极的自放电性能 ;添加 Si,Cr,V可显著改善 AB2 合金电极的高温放电性能 .讨论了各种添加元素影响合金性能的可能原因.

稀土元素对LD31挤压型材的组织和性能的影响

采用金相法和扫描电镜研究了稀土元素在LD31RCS铝型材合金中的分布、存在状态及其对合金金相组织和性能的影响。结果表明,适量稀土主要富集在晶界上,它使合金组织细化,强度、硬度及挤压速度明显提高。过量稀土会形成Al-Si-Fe-RF多元球团状质点,促进韧窝的形核和发展,但它使合金组织粗化,强度和硬度下降。对掺法生产RE-LD31合金的稀土含量以0.2wt％为宜。

东海榴辉岩向斜长角闪岩的转化过程

The Ultrahigh Pressure Metamorphic (UHPM) eclogite, which was resulted from deep subduction of crustal continent, is very significant due to its continental dynamic implications. Further more, this kind of rocks experienced great P-T, fluid and stresses changes during its forming and exhumation, causing mineral reactions occur intensively, which resulted in a lot of fantastic micro-texture. The micro-texture was preserved duo to a rapid exhumation of the eclogite. This PhD dissertation takes such micro-textures in 10 Donghai eclogite samples South Sulu UHPM terrene, as research object to reveal the transformation of the eclogite to amphibolite. Microscope and Scanning Electron Microscope were employed to observe the micro-texture. Basing on microprobe analysis of minerals, the ACF projections and iso-con analysis were used to uncover the mineral reactions during the transformation. Micro-texture observation (both of Microcopy and Electron Scanning Microscope), demonstrated: l.The peak mineral assemblage of the researched Donghai eclogites is garnet + omphacite + rutile (+ kyanite + aptite +coesite). 2.The transformation of the Donghai eclogite to amphibolite can be divided into two stages: The earlier one is Symplectization, resulting in the forming of diopside + albite (+magnetite) symplectite that occurred only along the boundary between two adjacent omphacite grains. Other minerals were not involved in such reaction. The latter stage is Fluid-Infiltration of the eclogite, which was caused by fluid-intrusion. The infiltration is demonstrated by amphibolization of the symplectite, decomposition of garnet and the forming of some hydrous minerals such as phengite and epidote, and resulted in an amphibole + plagioclase + phengite + epidote or ziosite assemblage. Basing on microprobe analysis of the minerals, ACF projections indicated: In the ACF diagrams, the two joint lines of peak Grt + Omp and Dio + Ab crossed at Omp projection-point, indicating that the garnet had not taken part in the forming reaction of the Dio + Ab symplectite, just like that had been pointed out by micro-texture observation. In the ACF diagrams, the hornblende + plagioclase + epidote + phengite quadrilateral intersected with Dio + Ab + Grt triangle, demonstrating that the hydrous mineral assemblage was formed by fluid infiltration through garnet, diopside and albite. Iso-con (mass-balance) analysis of the symplectization and infiltration reveals: 1.The symplectization of the omphacite has a very complex mass exchange: Some symplectite gained only silicon from its surroundings; and some one requires Ca, but provides Na to its surroundings; while other symplectite provides Ca, Mg and Fe to its surroundings. 2.The infiltration cause variable mass exchanges occurring among the garnet, diopside and albite: In some eclogite sample, no mass, except H2O, exchange occurred during the infiltration. Meanwhile, there was not any hydrous mineral except hornblende formed in the sample accordingly. In some samples, the mass exchange among the three minerals is complex: amphibolization of the diopside in a symplectite gained Al from garnet, and provided Si and Ca to its surrounding, resulting in a Si, Ca and Al-rich fluid. Correspondingly, there was a lot of phengite and ziosite occurred in the sample. In other samples, the amphibolization of a symplectite provided Fe and Mg besides Si and Ca to its surrounding while gained Al. In such kind of sample, epidote occurred within the hydrous mineral assemblage. Synthesizing the micro-texture observation, ACF analysis and iso-con analysis, we deduced the transformation procedure as following: 1. A symplectite after an omphacite was resulted by one, or two, or all of following mineral reactions together: Jd (Ca-Tsch) +SiO2=Ab (An) (1) 4NaA IS i.A+CaO=2NaAlS i308+Na20+CaAl2S 1208 (2) 2NaAlSi2OB (Jd in Omp)+CaMgSi;,0B(Dio in Omp)-2NaAlSi:,O"(Ab)+Ca0+Mg0 (3) 2(CaAl2Si0fi) (Ca-tsch in Omp)+CaFeSi2O6(Hed in 0mp)-H>2CaAl2Si208(An)+Ca0 + FeO (4) A CO2-rich fluid is suggested as cataclysm for the above reactions, which largely increased the mobility of Ca, Mg and Na resulted from reaction (2), (3) and (4). The immobile product Fe2* combined with rutile to form ilmenite, resulting in rutile + ilmenite symplectite. Or, the Fe was precipitated as hematite locally. A procedure of the fluid infiltration as following is suggested: I .A hydrous fluid intruded into the eclogite, and reacted first with garnet to form hornblende and extra Al, resulting in a hornblende film around the garnet grain and an Al-rich fluid. 2.The Al-rich fluid infiltrated through the symplectite, OH" and part of the Al in the fluid combined with Dio while some Si and Ca in the Dio were dissolved made the Dio transferred to amphibole. Meanwhile, plagioclase-type cation exchange occurred between the fluid and plagioclase in the symplectite, making the plagioclase have a higher An-content. 3.Above infiltration and cation exchange resulted in an Al, Si, Ca (and K, providing the primary hydrous fluid contain K)-rich fluid. 4.Under suitable conditions, the solute in the fluid precipitated to form phengite firstly. After the K element in the fluid was consumed up, ziosite or epidote was formed. If the fluid did not contain any K. element, only ziosite or epidote was precipitated. For those eclogites, where all omphacite had been replaced by symplectite before infiltration, neither element exchange occurred, nor did phengite or epidote form during the infiltration. At the last stage, the garnet was oxidized and breakdown: garnet + H2O = epidote + hornblende + hematite, due to more and more fluid intruding into the eclogite. At this time, all the peak minerals were replaced by amphibolite-phase ones, and the eclogite transformed to an amphibolite completely. Tentative pressure calculation indicates that the infiltration occurred at 3-6kbar (about 10-20km depth), where the deformation mechanics transformed from brittle to ductile yield. At such depth, the surface water can permeate the rocks through fault system, causing a rapid cooling.

苏州高岭石的热变过程研究

运用X射线衍射、红外光谱及固体高分辨核磁共振等手段，研究了苏州高岭石560～1600℃热变产物，结果显示：①高岭石．偏高岭石．莫来石的转变系列存在结构上的连续性，其转变经历了脱羟阶段（约400～600℃），偏高岭石阶段（600～800℃），相分离阶段（800～1100℃），莫来石阶段（1100～1600℃）；②莫来石形成过程没有出现AlO3的大量分凝，但存在SiO2分凝；③偏高岭石．莫来石转变过程的中间相为Al-Si尖晶石和准莫来石；④引起1000℃放热反应的主要因素是SiO2的大量分凝，其次是准莫来石等过渡相的形成。

高岭石热转变产物^29Si、^27Al魔角旋转核磁共振研究

运用魔角旋转核磁共振结合红外光谱及X射线衍射等手段，研究了苏州高岭石的560－1600℃热转变产物，主要获得以下结论：（1）高岭石－偏高岭石－莫来石的转变系列的确存在结构上的连续性。其转变经历了几个阶段；脱羟阶段（400－600℃），偏高岭石阶段（600－800℃），相分离阶段（800－1100℃），莫来石阶段（1100－1600℃）。（2）莫来石形成过程没有出现Al2O3的大量分凝，但存在SiO2的分凝。（3）偏高岭石－莫来石转变过程的中间相为Al-Si尖晶石和准莫来石。（4）引起1000℃放热反应的主要因素是准莫来石的形成。

甘肃金川Ⅱ号岩体辉石化学特征及其地质意义

金川Ⅱ号岩体主要由二辉橄榄岩和硫化物橄榄岩构成，单斜辉石和斜方辉石为岩相中主要造岩矿物，单斜辉石含量一般高于斜方辉石。矿物间的结构关系表明主要造岩矿物的结晶顺序为：橄榄石-斜方辉石-单斜辉石-斜长石。单斜辉石的TiO2，Al2O3，Cr2O3和Na2O质量分数依次为：0．29％～1．26％、3．17％～3．59％、0．86％～1．14％、0．29％～0．57％，斜方辉石的TiO2，Al2O3，Cr2O3和Na2O质量分数普遍低于单斜辉石，依次为：0．16％～0.40％、1．85％～2．38％、0．48％～0.68％、0．03％～0．10％。元素间的相关关系显示辉石的类质同像置换方式为：^MIFe^2＋ ＋2Si=^MITi＋2^IVAl,^MIFe^2＋ ＋Si=^MIFe^3＋ ＋^IV Al,Fe^3＋和Ti进入矿物晶格置换Fe^2＋来平衡Al置换Si产生的正电价差。两种辉石较低的TiO2，Al2O3和Na2O质量分数显示出母岩浆为拉斑玄武岩浆的特征。二辉石温度计和单辉石温度计算表明斜方辉石的结晶温度下限和单斜辉石结晶温度上限大致在1146℃～1166℃之间，单斜辉石的结晶一直持续到1032℃或者更低。金川Ⅱ号岩体单斜辉石演化明显表现出向透辉石端员偏离，暗示岩浆在结晶分异过程中，可能与富钙质围岩发生了同化混染作用.

晋北高岭石及其热产物的矿物物理学研究

通过对晋北地区高岭石及其热产物的研究，笔者主要得到了以下几点结论：1、晋北煤矸石是一种优质的高岭石，Fe、Ti含量低，结晶度高，晶体主要呈片状形态，具有较好的开发前景，应打破仅仅局限于陶瓷工业的局面。而P-1高岭石因Fe、Ti含量高，质量差。2、在高岭石受热脱羟过程中，部分羟基一直到850℃才完全脱失。3、在高岭石-莫来石反应系列中，存在SiO_2与Al_2O_3的分凝，SiO_2与Al_2O_3反应生成莫来石是莫来石的主要形成途径，Al-Si尖晶石与SiO_2反应生成莫来石只是一个次要途径。4、在高岭石热处理产物的研究中首次测到了-70ppm附近的Al-Si尖晶石的~(29)Si MAS NMR谱峰，Al-Si尖晶石是一个不稳定相，存在的温度范围大约为850-1000℃，随着温度升高，它将转变为莫来石。5、高岭石的980℃放热峰归因于在高岭石受热相变过程中，莫来石、方英石、γ-Al_2O_3的晶出。6、在煤矸石中，Fe主要以Fe~(2+)置换Al~(3+)形式存在，其次是部分Fe~(2+)被吸附在高岭石表面；而在P-1高岭石中，Fe主要以Fe~(3+)、Fe~(2+)置换Al~(3+)及杂质氧化物的形式存在。7、以前国内一些学者提出的所谓新矿物—“偏岭石”，笔者认为很可能是高岭石受煤自然烘烤形成的变高岭石。

Comparative Study Of The Influence Of Natural Convection On Directional Solidification Of Al-3.5 Wt% Ni And Al-7 Wt% Si Alloys

We present numerical simulations of thermosolutal convection for directional solidification of Al-3.5 wt% Ni and Al-7 wt% Si. Numerical results predict that fragmentation of dendrite arms resulting from dissolution could be favored in Al-7 wt% Si, but not in Al-3.5 wt% Ni. Corresponding experiments are in qualitative agreement with the numerical predictions. Distinguishing the two fragmentation mechanisms, namely dissolution and remelting, is critical during experiments on earth, when fluid flow is dominant. (C) 2007 COSPAR. Published by Elsevier Ltd. All rights reserved.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown by metalorganic chemical vapor deposition on Si(111) substrates, has been investigated. By optimizing the N/Al ratio during the AlN buffer, the threading dislocation density and the tensile stress have been decreased. High-resolution X-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. The variations of the tensile stress existing in the GaN films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 K. (C) 2003 Elsevier B.V. All rights reserved.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.