109 resultados para Laser materials


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Composite sapphire/Ti:sapphire crystals for high-power laser application were grown by the hydrothermal method. The results of the X-ray rocking curve analysis indicate high crystalline quality of the surface Al2O3 material. The strong bonding between the overgrown Al2O3 and seed Ti:Al2O3 crystals is indispensable for withstanding high thermal stresses produced by intense optical pumping. The optical loss at the boundary of the composite crystal is considerably low, indicating the lack of scattering centers. (c) 2005 Elsevier B.V. All rights reserved.

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水热法生长了复合钛宝石(Al2O3/Ti:Al2O3)激光晶体.对外层Al2O3X射线ω扫描表明其晶体质量很高.外层生长的Al2O3和内部的钛宝石激光棒结合牢固、紧密,因而能适应高强度泵浦所带来的激光介质内部的热应力.复合激光晶体界面层带来的光损耗很小.就我们所知,这是首次用水热法生长复合激光晶体.

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In this paper, single crystal of ytterbium (Yb) doped Ca-5(PO4)(3)F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982 nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (sigma(abs)) is 5.117 x 10(-20) cm(2) with an FWHM of 4 nm at 982 nm. The emission cross-section is (sigma(em)) 3.678 x 10(-20) cm(2) at 1042 nm. Favorable values of the absorption cross-section at about 982 nm are promising candidates for laser diode (LD) pumping. (c) 2005 Elsevier B.V. All rights reserved.

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We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/In(y)A((1-y))As grown on InP substrates using molecular beam epitaxy. X-ray diffraction and cross section transmission electron microscopy have been used to ascertain the quality of the QC laser materials. Quasi-continuous wave lasing at lambda approximate to 3.54-3.7 mum at room temperature was achieved. For a laser with 1.6 mm cavity length and 20 mum ridge-waveguide width,quasi-continuous wave lasing at 34 degreesC persists for more than 30 min, with a maximum power of 11.4 mW and threshold current density of 1.2 kA cm(-2), both record values for QC lasers of comparable wavelength.

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A novel Nd3+-doped lead fluorosilicate glass (NPS glass) is prepared by a two-step melting process. Based on the absorption spectrum a Judd-Ofelt theory analysis is made. The emission line width of NPS glass is 44.2nm. The fluorescence decay lifetime of the 4F3/2 level is 586±20μsec, and the stimulated emission cross-section is 0.87×10-20cm2 at 1056nm. A laser oscillation is occurred at 1062nm when pumped by 808nm Diode Laser. The slope efficiency is 23.7% with a 415mJ threshold. It is supposed that NPS glass is a good candidate for using in ultra-short pulse generation and amplification by the broad emission bandwidth and long fluorescence lifetime.

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利用热弹性理论分析了在光学材料中由于缺陷吸收激光能量引起的温度和热应力分布,并且针对一个简单的裂纹模型分析了热应力产生的应力强度因子,给出了一些主要参数对于应力强度因子的影响的规律。

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The nonlinear dynamics of 1.6-mu m fs laser pulses propagating in fused silica is investigated by employing a full-order dispersion model. Different from the x-wave generation in normally dispersive media, a few-cycle spatiotemporally compressed soliton wave is generated with the contrary contributions of anomalous group velocity dispersion (GVD) and self-phase-modulation. However, at the tailing edge of the pulse forms a shock wave which generates separate and strong supercontinuum peaked at 670 nm. It is also the origin of conical emission formed both in time and frequency domain with the contribution of normal GVD at visible light.

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Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

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Femtosecond pulsed lasers have been widely used for materials microprocessing. Due to their ultrashort pulse width and ultrahigh light intensity, the process is generally characterized by the nonthermal diffusion process. We observed various induced microstructures such as refractive-index-changed structures, color center defects, microvoids and microcracks in transparent materials (e.g., glasses after the femtosecond laser irradiation), and discussed the possible applications of the microstructures in the fabrication of various micro optical devices [e.g., optical waveguides, microgratings, microlenses, fiber attenuators, and three-dimensional (3D) optical memory]. In this paper, we review our recent research developments on single femtosecond-laser-induced nanostructures. We introduce the space-selective valence state manipulation of active ions, precipitation and control of metal nanoparticles and light polarization-dependent permanent nanostructures, and discuss the mechanisms and possible applications of the observed phenomena.

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The temperature dependence of the resistivity of KrF laser irradiated polyimide films was studied. In all cases, the resistivity decreased with increasing temperature. The irradiated polyimide film exhibited a typical semiconducting property. This result indicated that the irradiated polyimide films can be used as temperature-sensitive materials. We demonstrated that both the sensitivity and the sensitive temperature range of the irradiated polyimide films can be altered by adjusting laser irradiation parameters. The intrinsic relationship between the temperature coefficient of the resistivity and irradiation condition was interpreted in terms of the microstructural change. The result provided a new insight into the fundamental aspects of laser irradiated polyimide film structure and a method of preparing temperature-sensitive materials. (C) 2000 Elsevier Science B.V. All rights reserved.

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This paper performed a numerical simulation on temperature field evolution for the surface layer of a metallic alloy subjected to pulsed Nd:YAG laser treatment. The enthalpy method was adopted to solve the moving boundary problem, I.e. Stefan problem. Computational results were obtained to show the temperature field evolution. Effects of latent heat and mushy zone width on the temperature field were investigated. The results also show very high values of temperature gradient and cooling rate, which are typical characteristics during the solidification process.

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Thermal failure of SiC particulate-reinforced 6061 aluminum alloy composites induced by both laser thermal shock and mechanical load has been investigated. The specimens with a single-edge notch were mechanically polished to 0.25 mm in thickness. The notched-tip region of the specimen is subjected to laser beam rapid heating. In the test, a pulsed Nd:glass laser beam is used with duration 1.0 ms or 250 mu s, intensity 15 or 70 kW/cm(2), and spot size 5.0 mm in diameter. Threshold intensity was tested and fracture behavior was studied. The crack-tip process zone development and the microcrack formation were macroscopically and microscopically observed. It was found that in these materials, the initial crack occurred in the notched-tip region, wherein the initial crack was induced by either void nucleation, growth, and subsequent coalescence of the matrix materials or separation of the SiC particulate-matrix interface. It was further found that the process of the crack propagation occurred by the fracture of the SiC particulates.