96 resultados para Identity by descent matrix
Resumo:
Turbidity measurement for the absolute coagulation rate constant of suspensions has been extensively adopted because of its simplicity and easy implementation. A key factor to derive the rate constant from experimental data is how to theoretically evaluate the so-called optical factor involved in calculating the extinction cross section of doublets formed in the aggregation. In a previous paper, we have shown that compared with other theoretical approaches, the T-matrix method provides a robust solution to this problem and is effective in extending the applicability range of the turbidity methodology as well as increasing measurement accuracy. This paper will provide a more comprehensive discussion about the physical insight of using the T-matrix method in turbidity measurement and associated technical details. In particular, the importance of ensuring the correct value for the refractive indices for colloidal particles and the surrounding medium used in the calculation is addressed because the indices generally vary with the wavelength of the incident light. The comparison of calculated results with experiments shows that the T-matrix method can correctly calculate optical factors even for large particles, whereas other existing theories cannot. In addition, the calculated data of the optical factor by the T-matrix method for a range of particle radii and incident light wavelengths are listed.
Resumo:
Thermal failure of SiC particulate-reinforced 6061 aluminum alloy composites induced by both laser thermal shock and mechanical load has been investigated. The specimens with a single-edge notch were mechanically polished to 0.25 mm in thickness. The notched-tip region of the specimen is subjected to laser beam rapid heating. In the test, a pulsed Nd:glass laser beam is used with duration 1.0 ms or 250 mu s, intensity 15 or 70 kW/cm(2), and spot size 5.0 mm in diameter. Threshold intensity was tested and fracture behavior was studied. The crack-tip process zone development and the microcrack formation were macroscopically and microscopically observed. It was found that in these materials, the initial crack occurred in the notched-tip region, wherein the initial crack was induced by either void nucleation, growth, and subsequent coalescence of the matrix materials or separation of the SiC particulate-matrix interface. It was further found that the process of the crack propagation occurred by the fracture of the SiC particulates.
Resumo:
Here we attempt to characterize protein evolution by residue features which dominate residue substitution in homologous proteins. Evolutionary information contained in residue substitution matrix is abstracted with the method of eigenvalue decomposition. Top eigenvectors in the eigenvalue spectrums are analyzed as function of the level of similarity, i.e. sequence identity (SI) between homologous proteins. It is found that hydrophobicity and volume are two significant residue features conserved in protein evolution. There is a transition point at SI approximate to 45%. Residue hydrophobicity is a feature governing residue substitution as SI >= 45%. Whereas below this SI level, residue volume is a dominant feature. (C) 2007 Elsevier B.V. All rights reserved.
Resumo:
Zr-based bulk metallic glass matrix composites with the composition of Zr56.2Ti13.8Nb5.0Cu6.9Ni5.6Be12.(5) were synthesized by the copper-mould suction casting and the Bridgman solidification. The composite, containing a well-developed flowery beta-Zr dendritic phase, was obtained by the Bridgman solidification with the withdrawal velocity of 0.8 mm/s and the temperature gradient of 45 K/mm, and the ultimate strength of 2050 MPa and fracture plastic strain of 14.6% of the composite were achieved, which was mainly interpreted by the homogeneous dispersion of bcc beta-Zr phase in the glass matrix. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
Resumo:
The objective of this study was to illustrate the phylogenetic relationship of the species in the genus Craspedacusta in China. The medusae samples were collected at 28 localities in China representing seven described species with their entire ITS region (the contiguous sequences of ITS-1, 5.8S and ITS-2 rDNA) rDNA sequences cloned. Among the 28 samples, the range of sequence variation in the complete ITS and 5.8S region was between 0 and 36.2%. Three main clades were revealed by both maximum likelihood and neighbour-joining trees, with sequence difference of 0-0.9, 0-3.7 and 0.1-1.5% in the three clades. The nesting of C. xinyangensis representatives within C. sowerbii, C. brevinema within C. sinensis and C. sichuanensis within C. kiatingi is strongly supported, with interspecific sequence divergence of 0-0.9, 0.1-1.4 and 0.0-0.4%, respectively. Thus, it is suggested that C. xinyangensis should be the synonym of C. sowerbii, C. sichuanensis the synonym of C. kiatingi and C. brevinema the synonym of C. sinensis. However, the taxonomic status of C. ziguiensis is still uncertain. According to the tree topology, C. kiatingi was closer to C. sowerbii than to C. sinensis. Craspedacusta sinensis was the most genetically distinct from distance matrix values, and located at the base of the phylogenetic trees, so it can be speculated that the C. sinensis may be the ancestral form in the genus Craspedacusta.
Resumo:
A macro matrix solid-phase dispersion (MSPD) method was developed to extract 266 pesticides from apple juice samples prior to gas chromatography-mass selective detection (GC-MSD) determination. A 10 g samples was mixed with 20 g diatomaceous earth. The mixture was transferred into a glass column. Pesticide residues were leached with a 160 mL hexane-dichloromethane (1:1) at 5 mL/min. Two hundred and sixty-six pesticides were divided into three groups and detected by GC-MSD under selective ion monitoring. The proposed method takes advantage of both liquid-liquid extraction and conventional MSPD methods. Application was illustrated by the analysis of 236 apple juice samples produced in Shaanxi province China mainland this year. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
A folding nonblocking 4 X 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were connected by total internal reflection mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide (KOH) anisotropic chemical etching of silicon was employed. The device has a compact size of 20 X 3.2 mm(2) and a fast response of 8 +/- 1 mu s. Power consumption of 2 x 2 SE and excess loss per mirror were 145 mW and -1.1 dB, respectively. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
Resumo:
A folding rearrangeable nonblocking 4 x 4 optical matrix switch was designed and fabricated on silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were interconnected by total internal reflection (TIR) mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide anisotropic chemical etching of silicon was utilized to make the matrix switch for the first time. The device has a compact size of 20 x 1.6 mm(2) and a fast response of 7.5 mu s. The power consumption of each 2 x 2 SE and the average excess loss per mirror were 145 mW and -1.1 dB, respectively. Low path dependence of +/- 0.7 dB in total excess loss was obtained because of the symmetry of propagation paths in this novel matrix switch.
Resumo:
A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 x 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 x 2 switch showed very low power consumption of 140 mW and a very high speed of 8 +/- 1 mus. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 +/- 0.3 dB at 1.55 mum.
Resumo:
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled quantum dots (QDs) grown by molecular-beam epitaxy ( MBE) were investigated. The emission wavelength of 1317 nm was obtained by embedding InAs QDs in InGAs/GgAs quantum well. The temperature-dependent and timed-resolved photoluminescence (TDPL and TRPL) were used to study the dynamic characteristics of carriers. InGaAs cap layer may improve the quality of quantum dots for the strain relaxation around QDs, which results in a stronger PL intensity and an increase of PL peak lifetime up to 170 K. We found that InGaAs buffer layer may reduce the PL peak lifetime of InAs QDs, which is due to the buffer layer accelerating the carrier migration. The results also show that InGaAs cap layer can increase the temperature point when, the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics.
Resumo:
InAs quantum dots grown on InAlAs lattice-matched to (0 0 1) InP substrates by molecular beam epitaxy are investigated by double-crystal X-ray diffraction, photoluminescence and transmission electron microscopy. The growth process is found to follow the Stranski-Krastanow growth mode. The islands formation is confirmed by the TEM measurements. Strong radiative recombination from the quantum dots and the wetting layer is observed, with room temperature PL emission in the 1.2-1.7 mu m region, demonstrating the potential of the InAs/InAlAs QDs for optoelectronic device applications. (C) 1998 Elsevier Science B.V. All rights reserved.
Resumo:
InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [1(1) over bar0$] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (C) 1998 American Institute of Physics.
Resumo:
We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.
Resumo:
Hybrid composites composed of zinc phthalocyanine embedded in silicon matrixes have attracted attention because of the potential for solar energy conversion. We produce hybrid composites by thermal evaporation for the plithalocyanine and PECVD (Plasma Enhanced Chemical Vapor Deposition) for the silicon matrix. Deposition of ZnPc/a-Si(amorphous silicon) composites was achieved in a sequential manner. The compound films were characterized by optical transmittance spectra and photoconductivity measurement. The optical transmittance measurements were carried out in the visible region (500 - 800 nm). Compared to pure silicon film, the photosensitivity of compound functional films was enhanced by one order of magnitude. This demonstrates the Si sensitized by adding ZnPc.