In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells

Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH-->1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. (C) 2001 American Institute of Physics.

In-plane optical anisotropy in asymmetric Si1-xGex/Si/Si1-yGey superlattices

A trilayer asymmetric superlattice, Si/Si1-xGex/Si1-yGey, is proposed, in which the broken inversion symmetry makes the microstructure optically biaxial; in particular, inequivalent interfaces in this heterostructure may cause a polarization ratio as large as about 2.5% in the absence of an external field. The electronic structure and absorption spectra for two types of trilayer superlattice with different parameters are calculated by use of the tight-binding model; the findings indicate the importance of the carrier confinement for the anisotropy value. The effect of external electric field on the optical anisotropy for such structures has also been discussed, and a Pockels coefficient of 10-9 cm V-1 estimated.

Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices

Numerical calculations within the envelope function framework have been performed to analyze the relations between the magnitude of in-plane optical anisotropy and the values of the additional hole-mixing coefficients due to interface and electric field in (001) symmetric GaAs/AlxGa1-xAs superlattices for light propagating along the [001] direction. It is found that the heavy- and light-hole states are mixed independently by interface and electric field. The numeric results demonstrate that the line shape of the in-plane anisotropic spectrum is determined by the ratio of the two hole-mixing coefficients. Theoretical analysis shows that with the help of simple calculation of the anisotropy at k=0, reliable values of the hole-mixing coefficients can be determined by reflectance-difference spectroscopy (IDS) technique, demanding no tedious fitting of experimental curves. The in-plane optical anisotropy measured by RDS provides a new method of getting the information on buried interfaces through the Value of the hole-mixing coefficient due to interface.

Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction

The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

Parameters Inversion of Fluid-Saturated Porous Media Based on Neural Networks

The multi-layers feedforward neural network is used for inversion of material constants of fluid-saturated porous media. The direct analysis of fluid-saturated porous media is carried out with the boundary element method. The dynamic displacement responses obtained from direct analysis for prescribed material parameters constitute the sample sets training neural network. By virtue of the effective L-M training algorithm and the Tikhonov regularization method as well as the GCV method for an appropriate selection of regularization parameter, the inverse mapping from dynamic displacement responses to material constants is performed. Numerical examples demonstrate the validity of the neural network method.

Dynamic properties and asymmetry of tension and compression of metal matrix composites under impact loading

The mechanical behaviors of 2124, Al-5Cu, Al-Li and 6061 alloys reinforced by silicon carbide particulates, together with 15%SiCw/6061 alloy, were studied under the quasi-static and impact loading conditions, using the split Hopkinson tension/compression bars and Instron universal testing machine. The effect of strain rate on the ultra tensile strength (UTS), the hardening modulus and the failure strain was investigated. At the same time, the SEM observations of dynamic fracture surfaces of various MMC materials showed some distinguished microstructures and patterns. Some new characteristics of asymmetry of mechanical behaviors of MMCs under tension and compression loading were also presented and explained in details, and they could be considered as marks to indicate, to some degree, the mechanism of controlling damage and failure of MMCs under impact loading. The development of new constitutive laws about MMCs under impact loading should benefit from these experimental results and theoretical analysis.

A Continuation Method of Parameter Inversion for Non-Equilibrium Convection-Dispersion Equation

Based on the homotopy mapping, a globally convergent method of parameter inversion for non-equilibrium convection-dispersion equations (CDEs) is developed. Moreover, in order to further improve the computational efficiency of the algorithm, a properly smooth function, which is derived from the sigmoid function, is employed to update the homotopy parameter during iteration. Numerical results show the feature of global convergence and high performance of this method. In addition, even the measurement quantities are heavily contaminated by noises, and a good solution can be found.

Abel Inversion of Axially-Symmetric Shock Wave Flows

Finite-fringe interferograms produced for axisymmetric shock wave flows are analyzed by Fourier transform fringe analysis and an Abel inversion method to produce density field data for the validation of numerical models. For the Abel inversion process, we use basis functions to model phase data from axially-symmetric shock wave structure. Steady and unsteady flow problems are studied, and compared with numerical simulations. Good agreement between theoretical and experimental results is obtained when one set of basis functions is used during the inversion process, but the shock front is smeared when another is used. This is because each function in the second set of basis functions is infinitely differentiable, making them poorly-suited to the modelling of a step function as is required in the representation of a shock wave.

Two mechanisms for population inversion via two-colour coherent excitation in three-level systems

We analyse the physical origin of population inversion via continuous wave two-colour coherent excitation in three-level systems by dressing the inverted transition. Two different mechanisms are identified as being responsible for the population inversion. For V-configured systems and cascade (E) configured systems with inversion on the lower transition, the responsible mechanism is the selective trapping of dressed states, and the population inversion approaches the ideal value of 1. For Lambda-configured systems and Xi-configured systems with inversion on the upper transition, population inversion is based on the selective excitation of dressed states, with the population inversion tending towards 0.5. As the essential difference between these two mechanisms, the selective trapping of dressed states occurs in systems with strong decay into dressed states while the selective excitation appears in systems with strong decay out of dressed states.

Investigation of transient process and steady output of lasing without inversion

The transient evolution processes and steady outputs of continuous wave lasing without inversion (LWI) and self-pulsing LWI in a resonant open V type three-level system are studied. It was found that the two kinds of LWI have some obvious differences not only from the steady outputs but also from the transient evolution processes. The effects of the unsaturated gain coefficient, cavity loss coefficient, ratio of the atomic injection rates and atomic exit rate on the transient evolution processes and steady outputs are discussed.

Asymmetry of the photoionization rate of H atoms by a sequence of one-cycle laser pulses

Using an unperturbed scattering theory, the characteristics of H atom photoionization are studied respectively by a linearly- and by a circularly- polarized one-cycle laser pulse sequence. The asymmetry for photoelectrons in two directions opposite to each other is investigated. It is found that the asymmetry degree varies with the carrier-envelope (CE) phase, laser intensity, as well as the kinetic energy of photoelectrons. For the linear polarization, the maximal ionization rate varies with the CE phase, and the asymmetry degree varies with the CE phase in a sine-like pattern. For the circular polarization, the maximal ionization rate keeps constant for various CE phases, but the variation of asymmetry degree is still in a sine-like pattern.

Lasing without or with inversion in an open four-level system with a phase-fluctuation driving field

The effect of exit rate and the ratio of atomic injection rate on gain behaviour has been investigated, and the effects of phase fluctuation on absorption, dispersion and population difference in an open four-level system have been analysed by using numerical simulation from the steady linear, analytical solution. The variation of the linewidth, Rabi frequency of the driving field, the exit rate or the ratio of atomic injection rate can change the lasing properties in the open system. The presence of finite linewidth due to driving-field phase fluctuation prevents the open four-level atomic system from obtaining a high refractive index along with zero absorption.

Sideband manipulation of population inversion in a three-level Λ atomic system

Sideband manipulation of population inversion in a three-level A atomic configuration is investigated theoretically. Compared with the case of a nearly monochromatic field, a population inversion between an excited state and a ground state has been found in a wide sideband intensity range by increasing the difference in frequency between three components. Furthermore, the population inversion can be controlled by the sum of the relative phases of the sideband components of the trichromatic pump field with respective to the phase of the central component. Changing the sum phase from 0 to pi, the population inversion between the excited state and the ground state can increase within nearly half of the sideband intensity range. At the same time, the sideband intensity range that corresponds to the system exhibiting inversion rho(00) > rho 11 also becomes wider evidently.