Recrystallization of HDPE in HDPE/iPP quenched films

Epitaxial crystallization behavior of HDPE/iPP double layers under quenching and annealing conditions has been studied by means of transmission electron microscopy (TEM). The results obtained from bright field TEM observations indicate that in the as-quenched state the HDPE that is in direct contact with the surface of the oriented iPP substrate recrystallizes in the form of oriented crystallites dispersed on the iPP substrate. The electron diffraction results show that besides the two normally observed epitaxial orientations between HDPE and iPP, there is also a special orientation with [001](HDPE)parallel to[001](iPP). The HDPE which is in contact with the clean surface of a glass slide crystallizes in small lamellae with random orientation. In the boundary region, the epitaxially crystallized HDPE small lamellae stop right on the boundary of the oriented iPP film. If the quenched samples are annealed at 128 degrees C (below T-m of HDPE) for 2 h, the small HDPE crystals grow to thick lamellae in both areas. But only the epitaxial orientation of HDPE with [001](HDPE)parallel to[101](iPP) has been observed.

高度C轴取向的ZnO膜的低温水热法制备

在预先镀有ZnO纳米层的（0001）蓝宝石衬底上利用低温水热法制备出ZnO薄膜。SEM和XRD显示此ZnO膜是由六棱柱状阵列构成的，基于蓝宝石衬底生长，具有高度的c轴择优取向，且（0004）摇摆曲线的FWHM达到1．8°。并发现了在水热溶液中加入一定量六次甲基四胺可以调节六棱柱状ZnO尺寸比例。

地面坡度对红壤坡面土壤侵蚀过程的影响研究

通过室内模拟降雨试验,研究了地面坡度对红壤坡面产流过程和侵蚀过程的影响,结果表明:坡面总径流量随坡度的增大呈减小趋势,其中25°坡面比5°坡面的径流量减小22.3%;随坡度的增加,坡面产流达到稳定的历时减少。径流含沙量和坡面侵蚀产沙量随坡度的变化在5°~20°呈增大趋势,而当坡度由20°增加到25°时,径流含沙量和侵蚀产沙量随坡度的增加呈减少的趋势,即在红壤坡面,坡度对侵蚀产沙量影响存在着临界坡度,其值变化于20°~25°之间。

植物路与土质路产流产沙过程的比较试验

通过室内人工降雨+放水冲刷相结合的方法,对5个坡度(3~18°),5种雨强(1~3mm.min-1),5组放水流量(1.4~9.0kg.m-2.s-1)下的黄棉土土质路面和早熟禾植物路面进行了共60余场次试验,对比分析了植物路相对于土质路侵蚀过程差异及产水、减沙效果。结果表明:在放水冲刷条件下,植物路侵蚀率随放水历时降低,其过程可用对数函数描述;土质路面侵蚀率变化复杂。两类道路的放水流量与侵蚀强度均呈现幂函数变化,且植物道路表现出明显的防蚀作用。雨强增加引起径流量、侵蚀强度增加,土质路的增加快于植物路;坡度增大时,侵蚀强度增大,径流深则为植物路稳定,土质路有小幅增加。植物路相对土质路的减沙幅度为26.24%~47.22%,减少能力可用抛物线方程描述,但植物路较土质路面有利于产生径流,径流深增加幅度平均为58.7%~144.1%,由于径流的泥沙含量大大降低,道路的侵蚀产沙反而有一定降低。

WEPP模型坡面版在黄土丘陵沟壑区的适用性评价——以坡度因子为例

利用安塞试验站1985-1992年的气象观测数据和野外坡度径流小区径流和土壤侵蚀量监测资料,评价了WEPP模型在黄土丘陵沟壑区不同坡度条件下的适用性。结果表明,径流量的模拟值在10°、15°、20°、25°和28°五个坡度条件下,变化幅度不如实测值明显,但模拟值随坡度变化的趋势和实测值相一致;WEPP模型对次降雨、年平均和多年平均土壤侵蚀量模拟结果较好,且无论是模拟值在不同坡度之间的差值、还是模拟值随坡度变化趋势均与实测值接近。I30对WEPP模型模拟次降雨径流量有重要影响,当I30大于0.92mm/min,模型模拟误差较大。WEPP模型对次降雨土壤侵蚀量的模拟与PI30密切相关,当PI30大于129mm2/min时,模型模拟误差较大。∑PI30对WEPP模型模拟年平均径流量和侵蚀量有重要影响,当∑PI30大于150mm2/min时,模拟精度明显下降,且∑PI30对径流模拟影响较对土壤侵蚀模拟影响明显。WEPP模型对次降雨、年平均和多年平均径流量模拟的Nash-Sutcliffe有效性ME分别为0.914、0.912和0.617;对次降雨、年平均和多年平均土壤侵蚀量模拟的Nash-Sutcliffe有效性ME...

Dipole bands in nucleus Pm-139

High-spin states in nucleus Pm-139 have been studied using the reaction Cd-116(Al-27, 4n)Pm-139. Two dipole cascades have been found. Spin and parity assignments were based on the Directional Correlation of Oriented Nuclei (DCO) ratios and systematic behavior in neighboring odd-proton nuclei. The level structures of Pm-139 are compared with those of the N = 78 isotone Eu-141 in which two dipole bands have been confirmed as magnetic rotational bands. The close similarity between them suggests that the dipole bands in Pm-139 may be magnetic rotational bands.

基于线性不变矩和角度向量的立体匹配算法

针对室内场景双目立体匹配有别于一般场景立体匹配的特殊性,提出了一种计算简便、准确度高的立体图像匹配算法。该算法首先利用canny算子检测物体的边缘,根据边缘的线性不变矩寻找出目标物体,然后提取出目标物体轮廓的特征点,利用角度直方图计算出左右图像的旋转角度,最后利用角度向量实现左右图像的对应像素点的匹配。线性不变矩有效地将计算复杂度由二维降低到一维,大大降低了计算量。角度向量的提出降低了特征点匹配的复杂度,而且计算简便,准确率高。实验表明,该算法对图像的缩放、旋转、平移均免疫,具有较高的识别精度和良好的抗干扰性,计算效率高于传统方法,有着较高的应用价值。

Feasibility of Protein a for the Oriented Immobilization of Immunoglobulin on Silicon Surface for a Biosensor with Imaging Ellipsometry

The feasibility of using protein A to immobilize antibody on silicon surface for a biosensor with imaging ellipsometry was presented in this study. The amount of human IgG bound with anti-IgG immobilized by the protein A on silicon surface was much more than that bound with anti-IgG immobilized by physical adsorption. The result indicated that the protein A could be used to immobilize antibody molecules in a highly oriented manner and maintain antibody molecular functional configuration on the silicon surface. High reproducibility of the amount of antibody immobilization and homogenous antibody adsorption layer on surfaces could be obtained by this immobilization method. Imaging ellipsometry has been proven to be a fast and reliable detection method and sensitive enough to detect small changes in a molecular monolayer level. The combination of imaging ellipsometry and surface modification with protein A has the potential to be further developed into an efficient immunoassay protein chip.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3177347]

Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of < 001 > ZnO//< 110 > STO on as-received SfO, and c-axis columnar growth with < 010 > ZnO//< 110 > STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (001) SfO by MOCVD. (C) 2008 Elsevier B.V. All rights reserved.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).