Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

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Growing process of CdS nanoclusters in zeolite Y studied by positron annihilation

Zeolite Y has been used as the host to generate CdS nanoclusters. The location of CdS nanoclusters inside zeolite hosts was confirmed by the blue-shifted reflection absorption spectra with respect to that of bulk CdS materials. But which kind of cage inside zeolite Y, sodalite cage or supercage, was preferred for the CdS clusters remained unclear. In this paper, we conducted positron annihilation spectroscopy (PAS) measurements for the first time on a series of CdS/Y zeolite samples and concluded that CdS clusters were not located in supercages but in smaller sodalite cages. The stability of CdS clusters inside the sodalite units was due to the coordination of Cd atoms with the framework oxygen atoms of the double six-ring windows. Moreover, PAS revealed some important information of surface states existing on the interfacial layers between CdS clusters and zeolite Y. (C) 2001 Elsevier Science B,V, All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

甜高粱在青海高原种植的初步研究；Preliminary study on sweet sorghum growing on Qinghai Plateau

为探讨甜高粱(Sorghum bicolor)在青海作为饲料作物种植的可能性,在青海高原上做了初步试验,结果显示:密度对茎秆高度、茎粗、产量有显著影响,对生育期、单株质量影响不显著,株行距为0.40 m×0.20m时,产量最高;浇水次数对甜高粱的生育期、茎秆高度、茎粗、单株质量、产量没有显著影响,表明甜高粱对水分依赖不高,具有很强的耐旱和抗旱性;地膜对甜高粱有极显著影响,使其生育期提前,茎秆高度增高,单株质量增加、产量提高;糖分含量在开花-收获期为15.93%~16.67%,比不盖地膜增加了29.19%~47.98%;大田示范密度0.50 m×0.20 m,开花-收获期666.7 m2产量达4 890.8 kg,投入产出比为1∶1.78,效益显著。研究表明,在青海高原东部农业区盖地膜种植饲用甜高粱,用作饲料是完全可行的。

Surprising arching sheet-like dendrites growing from BaF2 nanocubes

BaF2 nanocubes were prepared from quaternary reverse micelles of cetyl trimethyl ammonium bromide (CTAB), n-butanol, n-octane, and water. Interestingly, there are arching sheet-like dendrites growing between two neighbouring sides of these cubes. X-ray powder diffraction (XRD) analysis showed that the products were BaF2 single phase. Scanning electron microscopy (SEM) or transition electron microscopy (TEM) was used to estimate the size of the final products. The results showed that the shape and size of particles were strongly dependent on the reaction conditions, such as the temperature and reaction time. When the reaction temperature was 25 degreesC, we obtained cuboid-like particles with 'clean' surfaces (no dendrites growing on them), and when the temperature was 35 degreesC, we obtained nanocubes with dendrites growing from them between the neighbouring sides. The influence of reaction time at a temperature of 35 degreesC is also discussed.