53 resultados para G3764.W8A5 1929 .C5
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Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.
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失效检测是分布式系统的基本可靠性保障技术,它对运行时系统的存活状态进行及时检测.作为网络分布计算环境中的主流中间件,Web应用服务器(Web application server简称WAS)需要提供良好的检测机制,并且要能满足适应性的需求.适应性失效检测要求失效检测器能够根据应用需求和系统环境的变化而动态地改变检测的质量.首先给出了WAS的多层失效检测模型,然后基于失效检测器的服务质量规约,提出了适应性失效检测算法,并设计了一个WAS的适应性失效检测框架.它能够满足动态调整失效检测质量和灵活集成失效检测器的要求.该工作在OnceAS应用服务器中进行了实现,并给出了OnceAS平台上的实验及数据.
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中国科学院知识创新方向性项目(061Z291213) 资助课题
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本文叙述了2.4-二甲基戊二烯基稀土金属有机化合物的合成并通过元素分析,红外光谱、核磁共振谱及质谱的鉴定。测定了Gd(2.4-GH_(11))_3的单晶结构,此外还合成了(2.4-GH_(11)K.TMEDA及K_2C_8H_8·3THF并也测定了它们的晶体结构。在所合成化合物的红外光谱中,没有属于C=C双键的吸收峰,表明分子中配位体以η~5形式的大π键体系与稀土金属离子结合,在Ln(2.4-GH_(11))_2Cl·TMF和Ln(2.4-GH_(11))Cl_2·GH_THF的红外光谱中,于1060波数附近出现一强而宽的吸收峰,即化合物中有四氢呋喃分子络合。化合物的室温NMR谱有四个吸收峰,2.4-二甲基戊二烯配位体可能为η~5平面∪或W构型。化合物的水解'H-NMR谱与质谱都证实水解产物为2.4-二甲基-1.3-戊二烯。它是-2.4二甲基戊二烯阴离子水解所得的唯一产物,它表明化合物中的配位体确为2.4-二甲基戊二烯阴离子。(2.4-GH_(11))_2Cl·TMDA配合物晶体结构是应用低温X-射线衍射技术用Nicolet R_3 M/E型四园衍射仪LT-1低温装置并利用重原子法测定的最小二乘法精修至收敛时的一致性因子R=0.055. Rw=0.057。晶体属单斜晶系P21/n空间群。晶胞参数a=11.322(4)A, b=9.242(3)A, c=15.956(5)A. β=106.70(3)分子中2.4-二甲基戊二烯阴离子呈平面∪构型。钾离子与四甲基乙二胺二啮体结合形成的络合阳离子和2.4-二甲基戊二烯阴离子相间排列形成无限链状结构分子。2.4-二甲基戊二烯阴离子的C-C键长明显分为中间与外端C-C键两组。外端组C-C键双性质较强键长较短。表明C3具有负电荷的共振杂化体贡献较大。分子中K-C键最短的是K-C(1.5)。而不是具有较多负电荷的C3-K键。这可能是由于几何因素造成的。K_2C_8H_8·3THF的晶体结构是采用与前者相同的方法测定的。它属三斜晶系,PT空间群,晶胞参数a=10.263(3)A, b=13.157(4)A, c=9.443A, α=87.51(2)°, β=114.93(2)°, γ=76.81(2)°. V=1111.6A, R=0.051. 晶体中负二价的环辛四烯阴离呈平面构型,具有中心对称性,两侧与两中心对称相关的钾离子连接,相邻的非等效的钾离子间通过两四氢呋喃分子的氧原子相连接,从而形成了无限链状结构的分子。环辛四烯反映了Huckel的4n+2芳香性规则。该结构的特别之处在于四氢呋喃分子的氧原子以桥键形式与两个钾离子同时连接。而这种形式的桥键在其它化合物中似还未发现。Go(2.4-GH_(11))_3的晶体结构亦是采用与前述相同的方法测定的。其晶体为三斜晶系,PT空间群,晶胞参数a=12.541A, b=12.853A, c=8.432A, α=91.44°, β=108.61°, γ=117.97°, V=112.54A~3. 结构测定表明,Gd(2.4-GH_(11))_3分子具有C_3h对称性。三个配位体阴离了的九个带负电荷的碳原子近似以三帽三角棱柱形式与钆离子配位。分子中2.4-二甲基戊二烯阴离子的C-C键长-亦分为而组。外端C-C键较中间C-C键强,键长较短,亦表明C3具有较多的负电荷。2.4-二甲基戊二烯阴离子本身近似呈平面∪构型。C2,C4偏离由C1 C3 C5三碳原子构成的平面0.067A。方向上远离中心钆离子。可能在此以离子性为主的化合物中,钆离子与不带电荷的C2 C4间的相互作用有些排斥性质。与Nd(2.4-GH_(11))_3不同的是,在Gd(2.4-GH_(11))_3分子中,Gd-(C(1,5)键最短,而不是Gd-C(3)键。这可能是由于钆离子的半径较小,化合物的空间位阻效应较大所致。
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Theoretical and experimental investigations were performed to show the application of x-ray crystal truncation rod scattering combined with x-ray reflectivity in the measurements of surface roughness and near-surface damage of mechanochemically polished wafers. By fitting the measured crystal truncation rod curves it has been shown that polished wafers are divided into three parts -irregular steps on the surface, a damaged thin layer beneath the surface and a perfect bulk. The results show that the root mean square of the surface roughness of mechanochemically polished Fe-doped and/or S-doped InP wafers is one to two atom layers, and that the lateral correlation length of the surface roughness is about 3000-7500 Angstrom. The thickness of the damaged region is found to be about 1000 atom layers.
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By extending our microscopic model on optical-phonon modes in quantum wells to one-dimensional (1D) quantum-well wires (QWW), the optical displacements and associated electrostatic potentials of optical-phonon modes in 1D QWW are calculated. The modes can be clearly divided into confined LO bulklike, TO bulklike modes, and extended interfacelike modes provided the bulk phonon dispersion is ignored. The character of each type of mode is illustrated with special attention to the interfacelike modes, which are hybrids of longitudinal- and transverse-optical waves from the corresponding bulk materials. Based on the numerical results, approximate analytical formulas for bulklike modes are presented. As in 2D wells, both the optical displacements and Frohlich potentials for the bulklike modes vanish at the interfaces. The finite dispersion of bulk phonons has a more pronounced effect on the 1D phonon modes because interfacelike modes show mixed characteristics of 2D interface and bulklike modes.
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基于描述低能离子与原子碰撞的分子库仑过垒模型,详细阐述了与入射离子速度相关的反应窗理论,并对影响势垒变化的平均径向速度做了修正.根据该理论,计算C5+-He和He2+-He碰撞体系单电子俘获过程的态选择微分截面,并分别与Kamber等人和Mergel等人的实验结果进行了比较.
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A synchrotron is designed for tumour therapy with C6+ ions or proton. Its injector is a cyclotron, which delivers C5+ or H-2(+) ions to the synchrotron. After comparing the methods of the single-turn injection, the multi-turn injection and the stripping injection, this paper chooses the stripping injection method. In addition, the concept design of the injection system is presented, in which the synchrotron lattice is optimized.
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以连续5 a不同CO2浓度处理的长白赤松和红松幼苗为对象,采用CFU(活细胞计数)菌落计数法研究了大气CO2浓度对幼苗非根际土壤微生物数量的影响。结果表明:高浓度CO2(700μmol.mol-1和500μmol.mol-1)处理对长白赤松和红松幼苗非根际土壤细菌数量具有显著的(p<0.01)抑制作用,对真菌数量亦有抑制作用。大气CO2浓度升高对红松幼苗非根际土壤放线菌数量具有抑制作用(p<0.05),而对长白赤松幼苗土壤放线菌数量没有明显的影响。
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通过添加不同比例的粉煤灰对城市污泥进行钝化,对钝化污泥的pH值、养分含量及重金属含量变化以及各配比人工土壤的持水性能进行了研究,评价其用于无土排岩场生态修复的可行性.结果表明,当粉煤灰与污泥以Ⅲ(1∶1)和Ⅱ(2∶1)配比时,人工土壤持水性能高于对照(草甸棕壤),以Ⅳ(1∶2)配比时,持水性接近于对照;粉煤灰钝化污泥中养分含量极其丰富,处于高肥力水平,随着粉煤灰添加量的增加,人工土壤的养分含量呈现降低趋势;粉煤灰钝化污泥人工土壤中除了Ⅲ(1∶1)中Ni含量较高,为187.67 mg.kg-1外,各处理中重金属Cd、Pb、Cu、Zn、Cr含量都显著低于国家农用标准(GB 4284-84、GB 8173-87).
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Several zeolite catalysts such as SAPO-11, ZSM-11, ZSM-12, etc. were selected to convert I-hexene to branched hexenes in this work. Pore size of the zeolite catalyst plays an important role on the yield and the distribution of branched isohexenes. And the zeolite catalysts with the pore size of 0.6nm are optimum to produce dimethylbutenes (DMB). SAPO-11 zeolite is a suitable skeletal isomerization catalyst, especially in the production of methyl pentenes. Under the following reaction conditions: WHSV=1.0 h(-1), H-2/hexene=8, T=250 degreesC, P=0.2 MPa, the yield of skeletal isohexenes remains above 80% at the prolonged time-on stream of 80 h, accompanying low C5-, C7+ products and low carbon deposition on the catalyst.