The time delay in electrochemical measurements of a finite-volume system

For a sphere electrode enclosed in finite-volume electrolyte, the measured current will deviate from the result predicted by the semi-infinite diffusion theory after some time. By random-walk simulation, we compared this time to the one needed for diffusion layer to reach electrolyte boundary, and revealed a clear signal delay of electrochemical current. Further we presented a quantitative description of this delay time. The simulation results suggested that the semi-infinite diffusion theory can even be applied when the theoretical diffusion layer grows to 1.28 electrolyte thicknesses, with an accuracy better than 0.5%. We attributed this time delay to the molecules' finite propagation velocity. Finally, we discussed how this delay can influence and facilitate the following electrochemical detection towards the nanometer and single-cell scale.

Digital simulation in a thin layer spectroelectrochemical cell with minigrid platinum electrode by microregion approximation explicit finite difference method

The microregion approximation explicit finite difference method is used to simulate cyclic voltammetry of an electrochemical reversible system in a three-dimensional thin layer cell with minigrid platinum electrode. The simulated CV curve and potential scan-absorbance curve were in very good accordance with the experimental results, which differed from those at a plate electrode. The influences of sweep rate, thickness of the thin layer, and mesh size on the peak current and peak separation were also studied by numerical analysis, which give some instruction for choosing experimental conditions or designing a thin layer cell. The critical ratio (1.33) of the diffusion path inside the mesh hole and across the thin layer was also obtained. If the ratio is greater than 1.33 by means of reducing the thickness of a thin layer, the electrochemical property will be far away from the thin layer property.

A lattice Boltzmann method for KDV equation

We prepose a 5-bit lattice Boltzmann model for KdV equation. Using Chapman-Enskog expansion and multiscale technique, we obtained high order moments of equilibrium distribution function, and the 3rd dispersion coefficient and 4th order viscosity. The parameters of this scheme can be determined by analysing the energy dissipation.

Determination of Proper Processing Conditions of Material Surface Heat Treatment Through Finite Element Method

A two-dimensional model has been developed based on the experimental results of stainless steel remelting with the laminar plasma technology to investigate the transient thermo-physical characteristics of the melt pool liquids. The influence of the temperature field, temperature gradient, solidification rate and cooling rate on the processing conditions has been investigated numerically. Not only have the appropriate processing conditions been determined according to the calculations, but also they have been predicted with a criterion established based on the concept of equivalent temperature area density (ETAD) that is actually a function of the processing parameters and material properties. The comparison between the resulting conditions shows that the ETAD method can better predict the optimum condition.

A New Finite Element Method for Strain Gradient Theories and Applications to Fracture Analyses

A new compatible finite element method for strain gradient theories is presented. In the new finite element method, pure displacement derivatives are taken as the fundamental variables. The new numerical method is successfully used to analyze the simple strain gradient problems – the fundamental fracture problems. Through comparing the numerical solutions with the existed exact solutions, the effectiveness of the new finite element method is tested and confirmed. Additionally, an application of the Zienkiewicz–Taylor C1 finite element method to the strain gradient problem is discussed. By using the new finite element method, plane-strain mode I and mode II crack tip fields are calculated based on a constitutive law which is a simple generalization of the conventional J2 deformation plasticity theory to include strain gradient effects. Three new constitutive parameters enter to characterize the scale over which strain gradient effects become important. During the analysis the general compressible version of Fleck–Hutchinson strain gradient plasticity is adopted. Crack tip solutions, the traction distributions along the plane ahead of the crack tip are calculated. The solutions display the considerable elevation of traction within the zone near the crack tip.

Analysis of super compact finite difference method and application to simulation of vortex-shock interaction

Turbulence and aeroacoustic noise high-order accurate schemes are required, and preferred, for solving complex flow fields with multi-scale structures. In this paper a super compact finite difference method (SCFDM) is presented, the accuracy is analysed and the method is compared with a sixth-order traditional and compact finite difference approximation. The comparison shows that the sixth-order accurate super compact method has higher resolving efficiency. The sixth-order super compact method, with a three-stage Runge-Kutta method for approximation of the compressible Navier-Stokes equations, is used to solve the complex flow structures induced by vortex-shock interactions. The basic nature of the near-field sound generated by interaction is studied.

Numerical Simulation and Experimental Investigation about Internal and External Flows

In this paper, TASCflow3D is used to solve inner and outer 3D viscous incompressible turbulent flow (R-e = 5.6 X 10(6)) around axisymmetric body with duct. The governing equation is a RANS equation with standard k-epsilon turbulence model. The discrete method used is a finite volume method based on the finite element approach. In this method, the description of geometry is very flexible and at the same time important conservative properties are retained. The multi-block and algebraic multi-grid techniques are used for the convergence acceleration. Agreement between experimental results and calculation is good. It indicates that this novel approach can be used to simulate complex flow such as the interaction between rotor and stator or propulsion systems containing tip clearance and cavitation.

Numerical simulation of hypersonic viscous flow around space shuttle with method of diffusion analogy

Hypersonic viscous flow around a space shuttle with M(infinity) = 7, Re = 148000 and angle of attack alpha = 5-degrees is simulated numerically with the special Jacobian matrix splitting technique and simplified diffusion analogy method. With the simplified diffusion analogy method the efficiency of computation and resolution of the shock can be improved.

Numerical Simulation and Experimental Investigation about Internal and External Flows

In this paper, TASCflow3D is used to solve inner and outer 3D viscous incompressible turbulent flow (R-e = 5.6 X 10(6)) around axisymmetric body with duct. The governing equation is a RANS equation with standard k-epsilon turbulence model. The discrete method used is a finite volume method based on the finite element approach. In this method, the description of geometry is very flexible and at the same time important conservative properties are retained. The multi-block and algebraic multi-grid techniques are used for the convergence acceleration. Agreement between experimental results and calculation is good. It indicates that this novel approach can be used to simulate complex flow such as the interaction between rotor and stator or propulsion systems containing tip clearance and cavitation.

3D Finite Volume Scheme for Czochralski Crystal Growth

A general three-dimensional model is developed for simulation of the growth process of silicon single crystals by Czochralski technique. The numerical scheme is based on the curvilinear non-orthogonal finite volume discretization. Numerical solutions show that the flow and temperature fields in the melt are asymmetric and unsteady for 8’’ silicon growth. The effects of rotation of crystal on the flow structure are studied. The rotation of crystal forms the Ekman layer in which the temperature gradient along solid/melt surface is small.

3D Finite Volume Scheme for Czochralski Single Crystal Growth

Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production of single crystals for electronic applications. The Cz growth process involves multiple phases, moving interface and three-dimensional behavior. Much has been done to study these phenomena by means of numerical methods as well as experimental observations. A three-dimensional curvilinear finite volume based algorithm has been developed to model the Cz process. A body-fitted transformation based approach is adopted in conjunction with a multizone adaptive grid generation (MAGG) technique to accurately handle the three-dimensional problems of phase-change in irregular geometries with free and moving surfaces. The multizone adaptive model is used to perform a three-dimensional simulation of the Cz growth of silicon single crystals.Since the phase change interface are irregular in shape and they move in response to the solution, accurate treatment of these interfaces is important from numerical accuracy point of view. The multizone adaptive grid generation (MAGG) is the appropriate scheme for this purpose. Another challenge encountered is the moving and periodic boundary conditions, which is essential to the numerical solution of the governing equations. Special treatments are implemented to impose the periodic boundary condition in a particular direction and to determine the internal boundary position and shape varying with the combination of ambient physicochemical transport process and interfacial dynamics. As indicated above that the applications and processes characterized by multi-phase, moving interfaces and irregular shape render the associated physical phenomena three-dimensional and unsteady. Therefore a generalized 3D model rather than a 2D simulation, in which the governing equations are solved in a general non-orthogonal coordinate system, is constructed to describe and capture the features of the growth process. All this has been implemented and validated by using it to model the low pressure Cz growth of silicon. Accuracy of this scheme is demonstrated by agreement of simulation data with available experimental data. Using the quasi-steady state approximation, it is shown that the flow and temperature fields in the melt under certain operating conditions become asymmetric and unsteady even in the absence of extrinsic sources of asymmetry. Asymmetry in the flow and temperature fields, caused by high shear initiated phenomena, affects the interface shape in the azimuthal direction thus results in the thermal stress distribution in the vicinity, which has serious implications from crystal quality point of view.

Perturbational finite volume scheme for the one-dimensional Navier-Stokes equations

Starting from the second-order finite volume scheme,though numerical value perturbation of the cell facial fluxes, the perturbational finite volume (PFV) scheme of the Navier-Stokes (NS) equations for compressible flow is developed in this paper. The central PFV scheme is used to compute the one-dimensional NS equations with shock wave.Numerical results show that the PFV scheme can obtain essentially non-oscillatory solution.