Nonlinear propagation of fs laser pulses in liquids and evolution of supercontinuum generation

Nonlinear propagation of fs laser pulses in liquids and the dynamic processes of filamentation such as self-focusing, intensity clamping, and evolution of white light production have been analyzed by using one- and two-photon fluorescence. The energy losses of laser pulses caused by multiphoton absorption and conical emission have been measured respectively by z-scan technique. Numerical simulations of fs laser propagation in water have been made to explain the evolution of white light production as well as the small-scale filaments in liquids we have observed by a nonlinear fluorescence technique. (c) 2005 Optical Society of America.

Experimental study on a nonlinear photonics process of Er(0.5)Yb(3): FOV oxyfluoride nanophase vitroceramics

We study the nonlinear photonics of rare-earth-doped oxyfluoride nanophase vitroceramics (FOV), oxyfluoride glass (FOG), and ZBLAN fluoride glass. We found that an interesting fluorescence intensity inversion phenomenon between red and green fluorescence occurs from Er(0.5)Yb(3):FOV The dynamic range Sigma of the intensity inversion between red and green fluorescence of Er(0.5)Yb(3):FOV is about 5.753 x 10(2), which is 100 to 1000 times larger than those of other materials. One of the applications of this phenomenon is double-wavelength fluorescence falsification-preventing technology, which is proved to possess the novel antifriction loss and antiscribble properties. (c) 2007 Optical Society of America.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.