Enhancement of three-photon absorption cross-sections in a novel class of symmetrical charge transfer fluorene-based molecules

The three-photon absorption effect (3PA) of two novel symmetrical charge transfer fluorene-based molecules (abbreviated as BASF and BMOSF) has been determined by using a Q-switched Nd:YAG laser pumped with 38 ps pulses at 1064 nm in DMF. The measured 3PA cross-sections are 84 x 10(-78) and 114 x 10(-78) cm(6) s(2), respectively. The geometries and electronic excitations of these two molecules are systematically studied by PM3 and ZINDO/S methods. The relationships between 3PA cross-sections and intramolecular charge transfer are discussed micromechanically. The experimental and theoretical results have shown that the larger intramolecular charge transfer, which was characterized by the charge density difference between the ground state (SO) and the first excited state (S-I), the greater enhancement of the 3PA cross-sections. (c) 2005 Elsevier B.V. All rights reserved.

Large three-photon absorption and intramolecular charge transfer of the bis-donor fluorene-based molecules

Three-photon absorption (3PA) of two fluorene-based molecules with D-pi-D structural motifs (abbreviated as BPAF and BCZF) has been determined by using a Q-switched Nd: YAG laser pumped with 38 ps pulses at 1064 nm in DMF. The measured 3PA cross-sections are 222 and 140 x 10(-78) cm(6) s(2) for BPAF and BCZF, respectively. AM1 calculations show that attaching different donors changes the charge density distribution of the fluorene skeleton, and it is observed that the 3PA cross-section can be enhanced with increasing intramolecular charge transfer character, measured by the parameter Delta p(1)/Delta p(2)/Delta p(1)'. (c) 2005 Elsevier B.V. All fights reserved.

Theoretical investigation on the one- and two-photon absorption properties for a series of symmetrical charge transfer fluorene-phenylene and fluorene-thiophene derivatives

One- and two-photon absorption properties of a series of fluorene derivatives with symmetrical charge transfer D-IT-D and A-IT-A structural motifs have been theoretically investigated with ZINDO/S method. The optimized structures and the characterization of frontier molecular orbitals were obtained by using AMI calculations. Two-photon absorption properties of molecules have been studied using three-state model. The calculation results have shown that fluorene-thiophene derivatives exhibit larger two-photon absorption cross-section as compared with other studied molecules. To illustrate the results, the crucial effects of thiophene ring on fluorenethiophene derivatives and the net charge changes on the pi-conjugated bridges are analyzed theoretically. (c) 2006 Elsevier B.V. All rights reserved.

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Color centers and charge state recharge in gamma-irradiated Yb : YAP

Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.

Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3)

YAlO3 (YAP) crystals with different Yb3+ concentration have been grown by Czochralski method and cooperative fluorescence of Yb3+ ions in YAP crystal was studied under 940-nm infrared (IR) LD excitation at room temperature. The Yb concentration dependence of absorption intensity of IR and charge transfer bands exhibit different features. The green emission band in the region of 480-520nm was assigned to the cooperative deexcitation of two Yb3+ ions. The remaining upconverted emission bands containing various sharp peaks associated with impurity ions were observed and discussed. Charge transfer luminescence of heavily doped 20at% Yb:YAP is strongly temperature dependent and no concentration quenching of the charge transfer luminescence was found through the investigation of different Yb levels samples. (c) 2006 Elsevier B.V. All rights reserved.

Spectral properties and charge transfer luminescence of Yb3+ : Gd3Ga5O12 (Yb : GGG) crystal

The Yb (10%):GGG and Yb (30%): GGG crystals have been grown by the Czochralski method. The chemical compositions are: Yb1.07Gd1.74Ga5.19O12 and Yb0.33Gd1.47Ga5.2O12. The absorption and emission spectra of Yb:GGG crystal at room temperature have been measured. The spectroscopic parameters of Yb:GGG and Yb:YAG have been compared. Optical absorption spectra of Yb:GGG show 4f-4f transitions related to Gd3+ ion around 300 nm, and also an onset of charge transfer (CT) transitions from oxygen ligands to Gd3+ or Yb3+ cations below 240nm. The CT absorption of Yb3+ is largely overlapped by that of Gd3+ ions. (c) 2005 Elsevier B.V. All rights reserved.

Control of lunar and martian dust - Experimental insights from artificial and natural cyanobacterial and algal crusts in the desert of Inner Mongolia, China

Studies on the colonization of environmentally extreme ground surfaces were conducted in a Mars-like desert area of Inner Mongolia, People's Republic of China, with microalgae and cyanobacteria. We collected and mass-cultured cyanobacterial strains from these regions and investigated their ability to form desert crusts artificially. These crusts had the capacity to resist sand wind erosion after just 15 days of growth. Similar to the surface of some Chinese deserts, the surface of Mars is characterized by a layer of fine dust, which will challenge future human exploration activities, particularly in confined spaces that will include greenhouses and habitats. We discuss the use of such crusts for the local control of desert sands in enclosed spaces on Mars. These experiments suggest innovative new directions in the applied use of microbe-mineral interactions to advance the human exploration and settlement of space.

An improved method for the extraction of low molecular weight organic acids in variable charge soils

Due to specific adsorption to variable charge soils, low molecular weight organic acids (LMWOAs) have not been sufficiently extracted, even if common extractants, such as water and 0.1 M sodium hydroxide (NaOH), were employed. In this work, the method for extracting LMWOAs in soils with 0.1 M NaOH was improved for variable charge soils; e.g. 1.0 M potassium fluoride (KF) with pH 4.0 was applied as an extractant jointed with 0.1 M NaOH based on its stronger ability to change the electrochemical properties of variable charge soils by specific adsorption. With the proposed method, the recoveries of oxalic, tartaric, malic, citric and fumaric acids were increased from 83 4, 93 1, 22 2, 63 +/- 5 and 84 +/- 3% to 98 +/- 2, 100 +/- 2, 85 +/- 2, 90 +/- 2 and 89 +/- 2%, respectively, compared with NaOH alone. Simultaneously, the LMWOAs in Agri-Udic Ferrosol with field moisture were measured with a satisfactory result.

Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode

A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 mu m in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

Reduced dynamics with renormalization in solid-state charge qubit measurement

Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement.

Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires

We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.

Charge and spin currents in a three-terminal mesoscopic ring

We theoretically investigate the charge and spin currents in a three-terminal mesoscopic ring in the presence of a uniform and nonuniform Rashba spin-orbit interaction (SOI). It is shown that a fully spin-polarized charge current and a pure spin current can be generated by tuning the probe voltages and/or the strength of the Rashba SOI. The charge and spin currents oscillate as the strength of the Rashba SOI increases induced by the spin quantum interference. The ratio of probe voltages oscillates synchronously with the pure spin current as the strength of the Rashba SOI increases in a nonuniform Rashba ring, while it remains constant in a uniform Rashba ring. We demonstrate theoretically that a three-terminal uniform Rashba ring can be used as a spin polarizer and/or spin flipper for different spin injections, and a nonuniform Rashba ring could allow us to detect the pure spin current electrically. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3054322]

Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)

In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiOx(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under +/- 8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.