Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires

Quasi-aligned Eu2+-doped wurtzite ZnS nanowires on Au-coated Si wafers have been successfully synthesized by a vapor deposition method under a weakly reducing atmosphere. Compared with the undoped counterpart, incorporation of the dopant gives a modulated composition and crystal structure, which leads to a preferred growth of the nanowires along the [0110] direction and a high density of defects in the nanowire hosts. The ion doping causes intense fluorescence and persistent phosphorescence in ZnS nanowires. The dopant Eu2+ ions form an isoelectronic acceptor level and yield a high density of bound excitions, which contribute to the appearance of the radiative recombination emission of the bound excitons and resonant Raman scattering at higher pumping intensity. Co-dopant Cl- ions can serve not only as donors, producing a donor-acceptor pair transition with the Eu2+ acceptor level, but can also form trap levels together with other defects, capture the photoionization electrons of Eu2+, and yield long-lasting (about 4 min), green phosphorescence. With decreasing synthesis time, the existence of more surface states in the nanowires forms a higher density of trap centers and changes the crystal-field strength around Eu2+. As a result, not only have an enhanced Eu2+ -4f(6)5d(1)-4f(7) intra-ion transition and a prolonged afterglow time been more effectively observed (by decreasing the nanowires' diameters), but also the Eu2+ related emissions are shifted to shorter wavelengths.

Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.

南海表层沉积物与水柱中沉降颗粒物对比研究及其古环境再造意义

分析了南海62个表层沉积物样品中生源（有机质、碳酸钙和蛋白石）和非生源

高密度排列大功率垂直腔面发射激光器列阵

报道了980nm高密度排列大功率垂直腔面发射激光器列阵的研制.列阵单元为蜂窝状密堆积排列,单元台面直径为70μm,氧化孔径为30μm,相邻单元间隔为100μm.制作了含7,19,37个单元的列阵,讨论了它们的阈值电流和远场特性.在室温连续工作条件下,3种列阵的最大输出功率分别为0.26,0.5和0.6W.其中含37个单元的列阵在6A脉冲电流(脉宽30μs,重复频率100Hz)激发下,输出功率达到1.4W.

为连续语音识别用的单词音节神经网络建模的研究

本文主要研究连续语音中单词音节的神经网络建模问题．采用了一种富有特色的特征提取方法，并依据高维空间点覆盖理论，对实际连续数字语音的各不同数字音节，以人工切自连续数字语音中的2640个单字音节，构建连续语音中各不同数字音节的特征空间覆盖区，并使用7308个自连续数字语音中切分出的单字音节，利用仿生模式识别原理，进行了建模正确性验证．验证结果正确率达到97％以上，对同样数量的少量建模样本，识别率优于SVM方法．

Si（113）表面原子结构的低能电子衍射研究

于2010-11-23批量导入

加速器高频D电路Q值的计算与测量

介绍了回旋加速器高频单D型盒D电路Q值的计算与测量方法。重点对Q值的理论计算进行推导,并对计算原理进行说明。然后对计算结果和测量结果进行比较。得出的计算和测量结果基本吻合。误差产生的主要原因是计算过程中的近似和短路片接触电阻的取值,其中短路片接触电阻是一个重要因素,在设计腔体时应引起足够的重视。

额济纳天然绿洲景观演化驱动因子分析

额济纳天然绿洲位于我国西北干旱内陆河流域黑河流域下游 ,近年来 ,随着黑河中、上游地区下泄地表径流量的减少 ,额济纳天然绿洲景观退化严重。基于研究区近十几年来的景观演化总体特征 ,分别从气候因素、水文因素、人类干扰因素等几个主要的景观变化驱动因子入手 ,探讨其演化机制、揭示其演化规律。研究结果表明 :黑河流域中、上游下泄地表径流量的锐减而导致研究区地下水水位下降、地下水矿化度升高以及水质恶化是额济纳天然绿洲景观发生退化的根本原因 ,绿洲人类活动强度的增加、绿洲关键区域的超载和过牧以及蒸发度指数的升高、湿润系数的下降均加剧了研究区景观退化的程度。