Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

量子阱非对称法布里-珀罗腔调制器电折变模式蓝移

对于从实验中观察到的GaAs/GaAlAs多量子阱非对称法布里-珀罗腔调制器中电致折射率变化引起的模式蓝移现象，从理论上予以讨论。利用等效光程方法分析了电致折射引起的模式的移动特性，实验和理论符合较好。