黔东南小香羊与贵州原有其它山羊品种的线粒体DNA 多态性比较

用B am H É、B g lÉ、B g lÊ、D raÉ、E coR É、E coR Í、H indË、Kp nÉ、 P stÉ、P vuÊ、S acÉ、S a lÉ、Sm aÉ、S tuÉ、X hoÉ 15 种识别6 碱基的限制性内 切酶对黔东南小香羊和贵州原有3 个地方山羊品种的93 只个体的m tDNA 进行分 析表明, B am H É、H indË 和S a lÉ 3 种酶表现多态性; 共检出18 种限制性多态型, 归纳得到3 种单倍型, 以单倍型É 和Ê 为基本单倍型。根据此2 种基本单倍型在所 比较各品种中的不同分布比例, 以及遗传距离分析和品种间的聚类关系, 表明黔东 南小香羊的群体遗传构成与贵州省原有其它3 个山羊品种不同, 从而为进一步确认 其为一独立的品种提供了必要的分子生物学依据。

17种植物中蛋白质提取物的抗HIV-1活性

以化合物对ＨＩＶ１诱导Ｃ８１６６细胞形成合胞体的抑制实验和化合物对ＨＩＶ１感染细胞的保护实验作为初筛方法，筛选了来源于７科１７种植物的４７个样品，其中８个样品经测定是核糖体失活蛋白（ＲＩＰｓ），其余为粗提蛋白。进而测定了初筛有抗ＨＩＶ活性的化合物对共培养、急性和慢性感染的ＨＩＶ１ｐ２４抗原表达水平的影响，用间接荧光染色检测这些化合物对ＨＩＶ抗原阳性细胞率的影响，以确证其抗ＨＩＶ活性。天花粉蛋白（ＴＣＳ）、南方栝楼蛋白峰Ⅴ、南方栝楼蛋白峰Ⅵ均显著地抑制合胞体的形成；巴Ⅱ、丝瓜子蛋白、油瓜根蛋白、木盍藤子蛋白有一定的抑制作用。老鼠拖瓜蛋白、大叶木鳖子根蛋白、西双版纳根Ⅱ等粗提蛋白有显著的抑制作用。ＲＩＰｓ不能保护ＨＩＶ１感染细胞的死亡。ＴＣＳ显著地抑制了ＨＩＶ１急性感染中ｐ２４抗原的表达，减少了ＨＩＶ抗原阳性细胞数，但它们均不影响共培养细胞融合、ＨＩＶ１慢性感染中ｐ２４抗原表达水平。结果表明，除ＴＣＳ等已知ＲＩＰｓ外，还有一些新的ＲＩＰｓ具有不同程度的抗ＨＩＶ活性。

Validation of a method of estimating age, modelling growth, and describing the age composition of Coilia mystus from the Yangtze Estuary, China

A collection of 577 Coilia mystus was made during April 2006 and 2007 from China's Yangtze Estuary to estimate the age structure and growth patterns of the population. Examination of sectioned sagittal otoliths revealed a periodic straight/curved growth pattern. The straight zone was from April to November, and the curved zone from October to May, indicating annual periodicity. Annual periodicity was also verified by margin zone analysis. The shift from a curved-zone to the next straight-zone stanza was defined as an annulus. The fish from which the otoliths were taken were 0-5 years old. The von Bertalanffy growth function was fitted to standard length (LS)-at-age data as L-S = 215.16 (1 - e(-0.53(t+0.30))) (n = 577, r(2) = 0.81, p < 0.05). The mature females included five age classes, ages 1 and 2 accounting for 74.3% of the population. The mature males included fish aged 1 and 2, those at age 1 accounting for 86.4% of the population. Mean length was smaller, and annual growth less, for mature males than for females of comparable age. The study demonstrated that the Yangtze population of C. mystus consists of more age classes than previously thought and that the age structure of the population needs to be considered in management decisions.

Antibunching and blinking from a single colloidal CdSe quantum dot

We have investigated the optical properties of single CdSe/ZnS nanocrystals by conducting combinations of experiments on antibunching and photoluminescence intermittence under different experimental conditions. Based on photoluminescence in an antibunching experiment, we analyzed the emission lifetime of QDs by using stretched exponentials. The difference between the parameters obtained from average lifetimes and stretched exponents were analyzed by considering the effect of nonradiative emission. An Auger-assisted tunneling model was used to explain the power law exponents of off time distribution. The power law exponent under high excitation power was correlated with a higher Auger ionization rate. Using the parameters obtained from stretched exponential function and power law, the antibunching phenomena at different time and under different excitation intensity were analyzed.

Fabrication of 2 x 2 tapered multimode interference coupler

The authors demonstrate a 3dB 2 x 2 parabolically tapered multimode interference (MMT) coupler with a large cross-section and space between the different ports using silicon-on-insulator technology. The device exhibits a uniformity of < 0.8dB and can be used in the realisation of an MMI-based optical switch with a high extinction ratio.

GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY

HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.