38 resultados para Complex Programmable Logic Device (CPLD)
Resumo:
A complex-coupled DFB laser with sampled grating has been designed and fabricated. The method uses the + 1 st order reflection of the sampled grating for laser single-mode operation. The typical threshold current of the sampled grating based DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5385μm, which is the +1 st order wavelength of the sampled grating.
Resumo:
1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.
Resumo:
In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1, 10-phenanthroline) doped 4,4'-N,N'-dicarbazole- biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)(3)phen molecules, thus enhancing the EL efficiency.
Resumo:
A series of red-light emitting electrophosphorescent polyfluorenes (PFs) with varying content of a quinoline-based iridium complex, (PPQ)(2)Ir(acac) (bis(2,4-diphenylquinolyl-N,C-2') iridium(acetylacetonate)), in the side chain are synthesized by Suzuki polycondensation. Because of the efficient Forster energy transfer from the PF main chain to (PPQ)(2)Ir(acac) and direct charge trapping on the complex, the electroluminescent emission from PF is nearly completely quenched, even though the amount of iridium complex I incorporated into the polymers is as low as 1 mol %. Based on a single-layer device configuration, a luminous efficiency of up to 5.0 cd A(-1) with a luminance of 2000 cd m(-2) and Commission Internationale de L'Eclairage coordinates of (0.63, 0.35) (x, y) is realized, which is far superior to that of previously reported red-light emitting PFs containing benzothiazole- and isoquinoline-based iridium complexes.
Resumo:
In this work, the detailed conversion process of the dominant electroluminescence (EL) mechanism in a device with Eu(TTA)(3)phen (TTA=thenoyltrifluoroacetone, phen=1,10-phenanthroline) doped CBP (4,4(')-N,N-'-dicarbazole-biphenyl) film as the emitting layer was investigated by analyzing the evolution of carrier distribution on dye and host molecules with increasing voltage. Firstly, it was confirmed that only electrons can be trapped in Eu(TTA)(3)phen doped CBP. As a result, holes and electrons would be situated on CBP and Eu(TTA)(3)phen molecules, respectively, and thus creates an unbalanced carrier distribution on both dye and host molecules. With the help of EL and photoluminescence spectra, the distribution of holes and electrons on both Eu(TTA)(3)phen and CBP molecules was demonstrated to change gradually with increasing voltage. Therefore, the dominant EL mechanism in this device changes gradually from carrier trapping at relatively low voltage to Forster energy transfer at relatively high voltage.
Resumo:
The photoluminescence (PL) and electroluminescence (EL) properties of a samarium complex Sm(TTA)(3)phen (TTA = 2-thenoyltri-fluoroacetonate, phen = 1, 10-phenanthroline) were investigated. The results show that Sm(TTA)3phen could be used as promising luminescent and electron transporting material in the electroluminescent devices. The difference between PL and EL spectra was noticed and discussed. Besides, it is noteworthy that the choice of the hole transporting layer (HTL) showed significant effect on the device performance, which was explained by the low-lying highest occupied molecular orbit (HOMO) level of Sm(TTA)3phen and the different hole injection barrier at the HTL/EML (emitting material layer) interface.
Resumo:
Anew class of bifunctional architecture combining the useful functions of superparamagnetism and terbium complex luminescence into one material has been prepared via two main steps by a modified Stober method and the layer-by-layer (LbL) assembly technique. The obtained bifunctional nanocomposites exhibit superparamagnetic behavior, high fluorescence intensity, and color purity. The architecture has been characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), UV-vis absorption and emission spectroscopy, X-ray diffraction, and superconducting quantum interference device (SQUID) magnetometry.
Resumo:
A new dysprosium complex Dy(PM)(3)(TP)(2) [where PM = 1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone and TP = triphenyl phosphine oxide] was synthesized, and its single-crystal structure was also studied. Its photophysical properties were studied by absorption spectra, emission spectra, fluorescence quantum efficiency, and decay time of the f-f transition of the Dy3+ ion. In addition, the antenna effect was introduced to discuss the energy transfer mechanism between the ligand and the central Dy3+ ion. Finally, a series of devices with various structures was fabricated to investigate the electroluminescence (EL) performances of Dy(PM)(3)(TP)(2). The best device with the structure ITO/CuPc 15 nm/Dy complex 70 nm/BCP 20 nm/AlQ 30 nm/LiF 1 nm/Al 100 nm exhibits a maximum brightness of 524 cd/m(2), a current efficiency of 0.73 cd/A, and a power efficiency of 0.16 lm/W, which means that a great improvement in the performances of the device was obtained as compared to the results reported in published literature. Being identical to the PL spectrum, the EL spectrum of the complex also shows characteristic emissions of the Dy3+ ion, which consist of a yellow band at 572 nm and a blue emission band at 480 nm corresponding to the F-4(9/2)-H-6(13/2) and F-4(9/2)-H-6(15/2) transition of the Dy3+ ion, respectively. Consequently, an appropriate tuning of the blue/yellow intensity ratio can be presumed to accomplish a white luminescent emission.
Resumo:
Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)
Resumo:
Zinc(II)-2-(2-hydroxyphenyl)benzothiazolate complex is an excellent white-light-emitting material. Despite some studies devoted to this complex, no information on the real origin of the unusually broad electroluminescent (EL) emission is available. Therefore, we investigate photoluminescent and EL properties of the zinc complex. Orange phosphorescent emission at 580 nm was observed for the complex in thin film at 77 K, whereas only fluorescent emission was obtained at room temperature. Molecular orbitals, excitation energy, and emission energy of the complex were investigated using quantum chemical calculations. We fabricated the device with a structure of ITO/F16CuPc(5.5 nm)/Zn-complex/Al, where F16CuPc is hexadecafluoro copper phthalocyanine. The EL spectra varied strongly with the thickness of the emissive layer. We observed a significant change in the emission spectra with the viewing angles. Optical interference effects and light emission originating both from fluorescence and from phosphorescence can explain all of the observed phenomena, resulting in the broad light emission for the devices based on the Zn complex. We calculated the charge transfer integral and the reorganization energy to explain why the Zn complex is a better electron transporter than a hole transporter.
Resumo:
The multi-layered electroluminescent device consisting of Eu(TTA)(3)(2,2'-bipyridine mono N-oxide) (TTA = 2-thenoyltrifluoroacetonate) as the red dopant exhibited an impressive current and power efficiency at a brightness of 100 cd m(-2) and voltage-independent spectral stability.
Resumo:
Electroluminescence (EL) devices with Eu(HTH)(3)phen [HTH: 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)-1,3-hexanedione, phen: I 10-phenanthroline] as an emissive centre were fabricated using vacuum evaporation. In addition to the Eu3+ 5D0 --> F-7(J) (J = 0-4) lines that were visible in the photoluminescence signal, the device also showed strong emission from the D-5(1) --> F-7(J) (J = 0-4) transitions. The enhanced emission from the D-5(1) F-7(J) (J = 0-4) transitions was attributed to the increased excitation intensity in the EL device. The luminescence lifetimes of the 5 D, and 5 Do levels were measured to be 0.6 mus and 866 mus, respectively.
Resumo:
An organic light-emitting diode fabricated by doping a europium, complex tris(dibiphenoylmethane)-mono (phenanthroline)-europium (Eu(DBPM)(3) (Phen)) into polymer poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene) and poly(N-carbazole) was realized by spin coating. Comparison with other europium complexes, due to the existence of a larger spectral overlap between Eu(DBPM)(3)(Phen) and poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4phenylene), a high efficiency red emission was achieved. The device showed a turn-on voltage of 5.2 V The maximum efficiency reached 0.47 cd/A at luminance of 50 cd/m(2). The maximum luminance can reach 150 cd/m(2) at 95 mA/cm(2). To the best of our knowledge, this is one of the best results based on europium complexes by spin-casting method.
Resumo:
A bright blue boron complex BPh2(pybm) containing 2-(2-pyridyl)benzimidazole ligand was designed and synthesized by using N, N-bidentate ligand instead of N, O-bidentate one such as 8-quinolinol. For three-layer LED devices with the configuration of ITO/NPB/BPh2(pybm)/Alq(3)/LiF/Al, the white light emission covering the whole visible region from 400 to 750 nm with the maximum brightness of 110 cd/m(2) and the luminous efficiency of 0.8 cd/A was observed.
Resumo:
An efficient organic light-emitting device using a trivalent europium (Eu) complex Eu(Tmphen)(TTA)(3) (TTA=thenoyltrifluoroacetone, Tmphen=3,4,7,8-tetramethyl-1,10-phenanthroline) as the dopant emitter was fabricated. The devices were a multilayer structure of indium tin oxide/N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (40 nm)/ Eu complex:4,4-N,N-dicarbazole-biphenyl (1%, 30 nm)/2,9-dimethyl,4,7-diphenyl-1,10phenanthroline (20 nm)/AlQ (30 nm)/LiF (1 nm)/Al (100 nm). A pure red light with a peak of 612 nm and a half bandwidth of 3 nm, which is the characteristic emission of trivalent europium ion, was observed. The devices show the maximum luminance up to 800 cd/m(2), an external quantum efficiency of 4.3%, current efficiency of 4.7 cd/A, and power efficiency of 1.6 lm/W. At the brightness of 100 cd/m(2), the quantum efficiency reaches 2.2% (2.3 cd/A).