A Study on the Microstructure Characteristic of the Cold-Rolled Deformed Nanocrystalline Nickel

In this paper the microstructure characteristic of the cold-rolled deformed nanocrystalline Nickel metal has been studied by transmission electron microscopy (TEM). The results show that there were step structures near by grain boundary (GB), and the contrast of stress field in front of the step corresponds to the step in the shape. It indicates that the interaction between twins and dislocations is not a necessary condition to realizing the deformation. In the later stage of the deformation when the grain size became about 100 nm, the deformation occurs only depend upon the moving of the boundary of the stack faults (SFs) which result from the imperfection dislocations emitted from GBs. In the other word, the movement of the boundary dislocations of SFs results to growing-up of the size of the SFs, therefore realizes deformation. However, when the size of stack faults grows up, the local internal stress which is in front of the step gradually becomes higher. When this stress reach a critical value stopping the gliding of the partial dislocations, the SFs will stop growing up and leave a step structure behind.

Step Structure in Cold-Rolled Deformed Nanocrystalline Nickel

The microstructure characteristic of the cold-rolled deformed nanocrystalline nickel metal is studied by transmission electron microscopy. The results show that there are step structures nearby the grain boundary (GB), and the contrast of stress field in front of the step corresponds to the step in the shape. It is indicated that the interaction between twins and dislocations is not a necessary condition to realizing the deformation. In the later stage of the deformation when the grain size becomes about 100nm, the deformation can depend upon the moving of the boundary of the stack faults (SFs) which result from the partial dislocations emitted from GBs. However, when the size of SFs grows up, the local internal stress which is in front of the step gradually becomes higher. When this stress reaches a critical value which stops the gliding of the partial dislocations, the SFs will stop to grow up and leave a step structure behind.

Fractography and Crack Initiation of Very-High-Cycle Fatigue for a High Carbon Low Alloy Steel

Very-High-Cycle Fatigue (VHCF) is the phenomenon of fatigue damage and failure of metallic materials or structures subjected to 108 cycles of fatigue loading and beyond. This paper attempts to investigate the VHCF behavior and mechanism of a high strength low alloy steel (main composition: C-1% and Cr-1.5%; quenched at 1108K and tempered at 453K). The fractography of fatigue failure was observed by optical microscopy and scanning electron microscopy. The observations reveal that, for the number of cycles to fatigue failure between 106 and 4108 cycles, fatigue cracks almost initiated in the interior of specimen and originated at non-metallic inclusions. An “optical dark area” (ODA) around initiation site is observed when fatigue initiation from interior. ODA size increases with the decrease of fatigue stress, and becomes more roundness. Fracture mechanics analysis gives the stress intensity factor of ODA, which is nearly equivalent to the corresponding fatigue threshold of the test material. The results indicate that the fatigue life of specimens with crack origin at the interior of specimen is longer than that with crack origin at specimen surface. The experimental results and the fatigue mechanism were further analyzed in terms of fracture mechanics and fracture physics, suggesting that the primary propagation of fatigue crack within the fish-eye local region is the main characteristics of VHCF.

Clemaps: Multiple Alignment Of Protein Structures Based On Conformational Letters

CLEMAPS is a tool for multiple alignment of protein structures. It distinguishes itself from other existing algorithms for multiple structure alignment by the use of conformational letters, which are discretized states of 3D segmental structural states. A letter corresponds to a cluster of combinations of three angles formed by C-alpha pseudobonds of four contiguous residues. A substitution matrix called CLESUM is available to measure the similarity between any two such letters. The input 3D structures are first converted to sequences of conformational letters. Each string of a fixed length is then taken as the center seed to search other sequences for neighbors of the seed, which are strings similar to the seed. A seed and its neighbors form a center-star, which corresponds to a fragment set of local structural similarity shared by many proteins. The detection of center-stars using CLESUM is extremely efficient. Local similarity is a necessary, but insufficient, condition for structural alignment. Once center-stars are found, the spatial consistency between any two stars are examined to find consistent star duads using atomic coordinates. Consistent duads are later joined to create a core for multiple alignment, which is further polished to produce the final alignment. The utility of CLEMAPS is tested on various protein structure ensembles.

Structure and mechanical properties of ceramic coatings fabricated by plasma electrolytic oxidation on aluminized steel

Ceramic coatings were formed by plasma electrolytic oxidation (PEO) on aluminized steel. Characteristics of the average anodic voltages versus treatment time were observed during the PEO process. The micrographs, compositions and mechanical properties of ceramic coatings were investigated. The results show that the anodic voltage profile for processing of aluminized steel is similar to that for processing bulk Al alloy during early PEO stages and that the thickness of ceramic coating increases approximately linearly with the Al layer consumption. Once the Al layer is completely transformed, the FeAl intermetallic layer begins to participate in the PEO process. At this point, the anodic voltage of aluminized steel descends, and the thickness of ceramic coating grows more slowly. At the same time, some micro-cracks are observed at the Al2O3/FeAl interface. The final ceramic coating mainly consists of gamma-Al2O3, mullite, and alpha-Al2O3 phases. PEO ceramic coatings have excellent elastic recovery and high load supporting performance. Nanohardness of ceramic coating reaches about 19.6 GPa. (c) 2007 Elsevier B. V. All rights reserved.

Characteristics of deep penetration laser welding of dissimilar metal Ni-based cast superalloy K418 and alloy steel 42CrMo

Experimental trials of autogenous deep penetration welding between dissimilar cast Ni-based superalloy K418 and alloy steel 42CrMo flat plates with 5.0 mm thickness were conducted using a 3 kW continuous wave (CW) Nd:YAG laser. The influences of laser output power, welding velocity and defocusing distance on the morphology, welding depth and width as well as quality of the welded seam were investigated. Results show that full keyhole welding is not formed on both K4.18 and 42CrMo side, simultaneously, due to the relatively low output power. Partial fusion is observed on the welded seam near 42CrMo side because of the large disparity of thermal-physical and high-temperature mechanical properties of these two materials. Tile rnicrohardness of the laser-welded joint was also examined and analyzed. It is suggested that applying negative defocusing in the range of Raylei length can increase the welding depth and improve tile coupling efficiency of the laser materials interaction. (c) 2007 Elsevier Ltd. All rights reserved.

On post-instability processes in adiabatic shear in hot rolled steel

EXPERIMENTS carried out using a split Hopkinson torsional bar have shown that only one shear band develops in specimens of hot rolled steel which break during testing. We observed, however, that in specimens which were not deformed to failure, several fine shear bands appeared. We believe that these formed during the loading cycle before the appearance of the final shear band and were not due to the effect of unloading. So we developed a numerical model to study the evolution of shear banding from several finite amplitude disturbances (FADs) in both temperature and strain rate. This numerical model reveals the detailed processes by which the FADs evolve into a fully developed shear band and suggests that beyond instability, the so-called shear banding process consists of two stages: inhomogeneous shearing and true shear-banding. The latter is characterized by the collapse of the stress and an abrupt increase of the local shear strain rate.

Mixed-mode fracture mechanisms near the fatigue threshold of aisi-316 stainless-steel

Near threshold, mixed mode (I and II), fatigue crack growth occurs mainly by two mechanisms, coplanar (or shear) mode and branch (or tensile) mode. For a constant ratio of ΔK_I/ΔK_II the shear mode growth shows a self-arrest character and it would only start again when ΔK_I and ΔK_II are increased. Both shear crack growth and the early stages of tensile crack growth, are of a crystallographic nature; the fatigue crack proceeds along slip planes or grain boundaries. The appearance of the fracture surfaces suggest that the mechanism of crack extension is by developing slip band microcracks which join up to form a macrocrack. This process is thought to be assisted by the nature of the plastic deformation within the reversed plastic zone where high back stresses are set up by dislocation pile-ups against grain boundaries. The interaction of the crack tip stress field with that of the dislocation pile-ups leads to the formation of slip band microcracks and subsequent crack extension. The change from shear mode to tensile mode growth probably occurs when the maximum tensile stress and the microcrack density in the maximum tensile plane direction attain critical values.

Formation and Structure of Composite Coating of HAD and Micro-Plasma Oxidation on A3 Steel

Composite coatings were obtained on A3 steel by hot dipping aluminum(HAD) at 720 degreesC for 6 min and micro-plasma oxidation (MPO) in alkali electrolyte. The surface morphology, element distribution and interface structure of composite coatings were studied by means of XRD, SEM and EDS. The results show that the composite coatings obtained through HAD/MPO on A3 steel consist of four layers. From the surface to the substrate, the layer is loose Al2O3 ceramic, compact Al2O3 ceramic, At and FeAl intermetallic compound layer in turn. The adhesions among all the layers are strengthened because the ceramic layer formed at the At surface originally, FeAl intermetallic compound layer and substrate are combined in metallurgical form through mutual diffusion during HAD process. Initial experiment results disclose that the anti-corrosion performance and wear resistance of composite coating are obviously improved through HAD/MPO treatment.

Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers

Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.

Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study

Using first-principles molecular dynamics simulations, the displacement threshold energy and defect configurations are determined in SiC nanotubes. The simulation results reveal that a rich variety of defect structures (vacancies, Stone-Wales defects and antisite defects) are formed with threshold energies from 11 to 64 eV. The threshold energy shows an anisotropic behavior and exhibits a dramatic decrease with decreasing tube diameter. The electronic structure can be altered by the defects formed by irradiation, which suggests that the electron irradiation may be a way to use defect engineering to tailor electronic properties of SiC nanotubes.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Amorphous silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 degreesC turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10(12) cm(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiOx and Si-in-SiNx thin films. Without altering the size or structure of the particles, a post-annealing at 300 degreesC for 2 min raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.

Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate

Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T < 70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. (C) 2001 American Institute of Physics.