Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

Beam splitter entangler for light fields

We propose an experimentally feasible scheme to generate various types of entangled states of light fields by using beam splitters and single-photon detectors. Two beams of light fields are incident on two beam splitters respectively with each beam being asymmetrically split into two parts in which one part is supposed to be so weak that it contains at most one photon. We let the two weak output modes interfere at a third beam splitter. A conditional joint measurement on both weak output modes may result in an entanglement between the other two output modes. The conditions for the maximal entanglement are discussed based on the concurrence. Several specific examples are also examined.

Imaging properties of coherent anti-Stokes Raman scattering microscope

The coherent anti-Stokes Raman scattering (CARS) microscope with the combination of confocal and CARS techniques is a remarkable alternative for imaging chemical or biological specimens that neither fluoresce nor tolerate labelling. CARS is a nonlinear optical process, the imaging properties of CARS microscopy will be very different from the conventional confocal microscope. In this paper, the intensity distribution and the polarization property of the optical field near the focus was calculated. By using the Green function, the precise analytic solution to the wave equation of a Hertzian dipole source was obtained. We found that the intensity distributions vary considerably with the different experimental configurations and the different specimen shapes. So the conventional description of microscope (e.g. the point spread function) will fail to describe the imaging properties of the CARS microscope.

Laser-driven coherent betatron oscillation in a laser-wakefield cavity

The origin of beam disparity in emittance and betatron oscillation orbits, in and out of the polarization plane of the drive laser of laser-plasma accelerators, is explained in terms of betatron oscillations driven by the laser field. As trapped electrons accelerate, they move forward and interact with the laser pulse. For the bubble regime, a simple model is presented to describe this interaction in terms of a harmonic oscillator with a driving force from the laser and a restoring force from the plasma wake field. The resulting beam oscillations in the polarization plane, with period approximately the wavelength of the driving laser, increase emittance in that plane and cause microbunching of the beam. These effects are observed directly in 3D particle-in-cell simulations.

Quantum superchemistry in an output coupler of coherent matter waves

We investigate the quantum superchemistry or Bose-enhanced atom-molecule conversions in a coherent output coupler of matter waves, as a simple generalization of the two-color photoassociation. The stimulated effects of molecular output step and atomic revivals are exhibited by steering the rf output couplings. The quantum noise-induced molecular damping occurs near a total conversion in a levitation trap. This suggests a feasible two-trap scheme to make a stable coherent molecular beam.

Coherent spectroscopy of the Rb-87 Fg=1 -> F-e=0 closed transition

This paper has observed linewidth narrowing of dark states in rubidium cell by using the Hanle configuration. The reduction of the coherent resonance width under the transition of Rb-87 F-g = 1 -> F-e = 0 is observed and the qualitative explanation about its mechanism is presented. Multiple subnatural width dips are obtained with a linearly polarized laser beam for the transition of Rb-87 F-g = 0, 1, 2. The feature of negative and positive slope, namely dispersionlike feature, is observed in the transmitted light.

Grating-encoded multichannel photorefractive incoherent-to-coherent optical conversion

A dynamic multichannel incoherent-to-coherent optical converter based on the photorefractive effect of SBN:Ce is described. A number of grating-encoded input images, illuminated by incoherent light, are projected onto the crystal to yield photoinduced phase gratings. Coherent positive replicas of these images are simultaneously reconstructed by a coherent read beam. A simple theoretical description of this converter and corresponding experimental results are presented.

Aberration measurement of projection optics in lithographic tools based on two-beam interference theory

The degradation of image quality caused by aberrations of projection optics in lithographic tools is a serious problem in optical lithography. We propose what we believe to be a novel technique for measuring aberrations of projection optics based on two-beam interference theory. By utilizing the partial coherent imaging theory, a novel model that accurately characterizes the relative image displacement of a fine grating pattern to a large pattern induced by aberrations is derived. Both even and odd aberrations are extracted independently from the relative image displacements of the printed patterns by two-beam interference imaging of the zeroth and positive first orders. The simulation results show that by using this technique we can measure the aberrations present in the lithographic tool with higher accuracy. (c) 2006 Optical Society of America.

Change in degree of coherence of partially coherent electromagnetic beams propagating through atmospheric turbulence

We study the change in the degree of coherence of partially coherent electromagnetic beam (so called electromagnetic Gaussian Schell-model beam). It is shown analytically that with a fixed set of source parameters and under a particular atmospheric turbulence model, an electromagnetic Gaussian Schell-model beam propagating through atmospheric turbulence reaches its maximum value of coherence after the beam propagates a particular distance, and the effective width of the spectral degree of coherence also has its maximum value. This phenomenon is independent of the used turbulence model. The results are illustrated by numerical curves. (c) 2006 Elsevier B.V. All rights reserved.

相干模表示的部分相干高斯谢尔光束的相位空间积

与传统的相干激光光束的评价不同, 对部分相干光束质量进行评价时, 不仅要反映其远场发散特性, 而且还要能体现光源本身的部分相干性。根据部分相干光的相干模表示法, 推导了由部分相干光源所产生光束的相位空间积Q。与前人在相干光源情形下得到的结论相比, 得出的相位空简积Q不仅包含各个全相干模基元线性组合的贡献, 而且还有来自不同的全相干模基元之间相互作用的贡献。

光纤激光器自成像腔相干组束研究

探讨了3种不同自成像腔，即Talbot腔、自傅里叶变换腔（SF）和傅里叶变换自成像腔实现相干组束的机理和技术难点。介绍了利用光纤激光器，采用傅里叶变换自成像方法，实现1维2路和2维4路激光相干组束的实验情况，功率分别达到122W以及26W。

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 mu m emission self-assembled InAs/GaAs quantum dots

Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1-xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.

GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 mu m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 mu m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 mu m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 mu m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm(2) with as-cleaved facet mirrors. (c) 2005 American Institute of Physics.

Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As (x = 0.2,0.3) and 3-nm In0.2Ga0.8As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long-wavelength of 1.33 mum and the energy separation between the ground and the first-excited state of 86 meV are observed at room temperature. Furthermore, comparative study proves that the energy separation can increase to 91 meV by multiple stacking.