Simultaneous blue, green, and red emission from diblock copolymer micellar films: a new approach to white-light emission

White-light emission is achieved from a single layer of diblock copolymer micelles containing green- and red-light-emitting dyes in the separate micellar cores and blue-light-emitting polymer around their periphery, in which fluorescence resonance energy transfer between fluorophores is inhibited due to micelle isolation, resulting in simultaneous emission of these three species.

Formation of Two Kinds of Hexagonally Arranged Structures in ABC Triblock Copolymer Thin Films Induced by a Strongly Selective Solvent Vapor

An order-order transition (OOT) in the sequence of a hexagonally arranged core-shell cylinder to a double-hexagonally arranged dot in polystyrene-block-poly(butadiene)-block-poly(2-vinylpyridine) (SBV) triblock copolymer thin films is reported to be induced upon exposure to a solvent vapor that: is strongly selective for the two end blocks. These two kinds of hexagonally arranged structures could form when the film thickness is 44, 3.23, and 223 nm. When the film thickness is decreased to 13 nm, the ordered structure is absent. The sizes of the cylinder structures formed with the same annealing time in films of different thickness are compared to address the effects of film thickness on the phase structure. The mechanism is analyzed from the total surface area of the blocks and the effective interaction parameter in the solvent vapor.

Monte Carlo simulation on symmetric ABA/AB copolymer blends in confined thin films

The effects of blend composition on morphology, order-disorder transition (ODT), and chain conformation of symmetric ABA/AB copolymer blends confined between two neutral hard walls have been investigated by lattice Monte Carlo simulation. Only lamellar structure is observed in all the simulation morphologies under thermodynamic equilibrium state, which is supported by theoretical prediction. When the composition of AB diblock copolymer (phi) increases, both lamellar spacing and the corresponding ODT temperature increase, which can be attributed to the variation of conformation distribution of the diblock and the triblock copolymer chains. In addition, both diblock and triblock copolymer, chains with bridge conformation extend dramatically in the direction parallel to the surface when the system is in ordered state. Finally, the copolymer chain conformation depends strongly on both the blend composition and the incompatibility parameter chi N.

Development of nanodomain and fractal morphologies in solvent annealed block copolymer thin films

We have systematically studied the thin film morphologies of asymmetric polystyrene-block-poly(ethylene oxide) (PS-b-PEO) diblock copolymer subjected to solvent vapors of varying selectivity for the constituent blocks. Upon a short treatment in neutral or PS-selective vapor, the film exhibited a highly ordered array of hexagonally packed, cylindrical microdomains. In the case of PEO selective vapor annealing, such ordered cylindrical microdomains were not obtained. instead, fractal patterns on the microscale were observed and their growth processes investigated. Furthermore, hierarchical structures could be obtained if the fractal pattern was exposed to neutral or PS selective vapor.

Competition of lamellar orientation in thin films of a symmetric poly(styrene)-b-poly(L-lactide)diblock copolymer in melt state

We have studied the lamellar orientation in thin films of a model diblock copolymer, symmetric poly(styrene)-b-poly(L-lactide) (PS-PLLA), in the melt state on supported silicon wafer surface. In this system, while the PLLA block prefers to wet the polymer/substrate interface, the polymer/air as well as polymer/polymer interface is neutral for both blocks due to the similar surface energies of PS and PLLA in melt state. Our results demonstrate that the interplay of the interfaces during phase separation results in a series of structures before approaching the equilibrium state. Lamellar orientation of thin films with different initial film thicknesses at different annealing stages has been investigated using atomic force microscopy (AFM), transmission electronic microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). It is found that in the early stage (annealing time t < 10 min), the polymer/substrate interface dominates the structure evolution, leading to a parallel lamellar structure with holes or islands formed depending on the initial film thickness. Later on, the neutral air interface becomes important and leads to a transition of lamellar orientation from parallel to perpendicular. It is interesting to see that for films with thickness h > 2L, where L is the bulk lamellar period, the lamellar orientation transition can occur independently in different parallel lamellar domains due to the neutrality of polymer/polymer interface.

A Monte Carlo simulation of morphology and structure for thin films of symmetric triblock copolymer after quenching and annealing

Self-assembly thin films of symmetric triblock copolymer after annealing and quenching were examined by an effective Monte Carlo simulation method. The defects in the ordered lamellae of the thin films after quenching, which were dependent on the initialization of copolymer melts, are removed in the thin films after annealing. The mean-square gyration radius and end-to-end distance of copolymer chains in the thin films after annealing are smaller than those in the thin films after quenching because of the complete relaxation of polymer during annealing. We also find that the density of A block in the region near to the surface is higher than that in the interior of the thin films. As a result, it is different from the thin films of symmetric A(n)B(n) diblock copolymer, in which surface ordering forms before the interior, that ordering phenomena occurs first in the interior region in the thin films of symmetric A(n)B(m)A(n). triblocl copolymer.

The formation of ordered nanoholes in binary, chemically similar, symmetric diblock copolymer blend films

Binary symmetric diblock copolymer blends, that is, low-molecular-weight poly(styrene-block-methyl methacrylate) (PS-b-PMMA) and high-molecular-weight poly(styrene-block-methacrylate) (PS-b-PMA), self-assemble on silicon substrates to form structures with highly ordered nanoholes in thin films. As a result of the chemically similar structure of the PMA and the PMMA block, the PMMA chain penetrates through the large PMA block that absorbs preferentially on the polar silicon substrate. This results in the formation of nanoholes in the PS continuous matrix.

Effects of casting solvents on the formation of inverted phase in block copolymer thin films

Previously, an inverted phase (the minority blocks comprising the continuum phase) was found in solution-cast block copolymer thin films. In this study, the effect of casting solvents on the formation of inverted phase has been studied. Two block copolymers, poly(styrene-b-butadiene) (SB) (M-w = 73 930 Da) and poly(styrene-b-butadiene-b-styrene) (SBS) (M-w = 140 000 Da), with comparable block lengths and equal polystyrene (PS) weight fraction (similar to30 wt %) were used. The copolymer thin films were cast from different solvents, toluene, benzene, cyclohexane, and binary mixtures of benzene and cyclohexane. Toluene and benzene are good solvents for both PS and PB, but have a preferential affinity for PS, while cyclohexane is a good solvent for PB but a Theta solvent for PS (T-Theta = 34.5 degreesC). The differential solvent affinity for PS and PB was estimated in terms of a difference between the polymer-solvent interaction parameter, chi, for each block. Under an extremely slow solvent evaporation rate, the time-dependent phase behavior during such a solution-to-film process was examined by freeze-drying the samples at different stages, corresponding to different copolymer concentrations, rho.

Solvent-induced microphase separation in diblock copolymer thin films with reversibly switchable morphology

We have studied the surface morphology of symmetric poly(styrene)-block-poly(methyl methacrylate) diblock copolymer thin films after solvent vapor treatment selective for poly(methyl methacrylate). Highly ordered nanoscale depressions or striped morphologies are obtained by varying the solvent annealing time. The resulting nanostructured films turn out to be sensitive to the surrounding medium, that is, their morphologies and surface properties can be reversibly switchable upon exposure to different block-selective solvents.

Solvent-induced novel morphologies in diblock copolymer blend thin films

We report the morphology and phase behaviors of blend thin films containing two poly styrene-b-poly (methyl methacrylate) (PS-b-PMMA) diblock copolymers with different blending compositions induced by a selective solvent for the PMMA block, which were studied by transmission electron microscopy (TEM). The neat asymmetric PS-b-PMMA diblock copolymers employed in this study, respectively coded as a(1) and a(2), have similar molecular weights but different volume fractions of PS block (f(PS) = 0.273 and 0.722). Another symmetric PS-b-PMMA diblock copolymer, coded as s, which has a PS block length similar to that of a(1), was also used. For the asymmetric a(1)/a(2) blend thin films, circular multilayered structures were formed. For the asymmetric a(1)/symmetric s blend thin films, inverted phases with PMMA as the dispersed domains were observed, when the weight fraction of s was less than 50%. The origins of the morphology formation in the blend thin films via solvent treatment are discussed. Combined with the theoretical prediction by Birshtein et al. (Polymer 1992, 33, 2750), we interpret the formation of these special microstructures as due to the packing frustration induced by the difference in block lengths and the preferential interactions between the solvent and PMMA block.

Effect of crystallization on the lamellar orientation in thin films of symmetric poly(styrene)-b-poly(L-lactide) diblock copolymer

The effect of crystallization on the lamellar orientation of poly( styrene)-b-poly(L-lactide) (PS-PLLA) semicrystalline diblock copolymer in thin films has been investigated by atomic force microscopy (AFM), transmission electronic microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). In the melt state, microphase separation leads to a symmetric wetting structure with PLLA blocks located at both polymer/substrate and polymer/air interfaces. The lamellar period is equal to the long period L in bulk determined by small-angle X-ray scattering (SAXS). Symmetric wetting structure formed in the melt state provides a model structure to study the crystallization of PLLA monolayer tethered on glassy (T-c < T-g,T-PS) or rubber (T-c > T-g,T-PS) PS substrate. In both cases, it is found that the crystallization of PLLA results in a "sandwich" structure with amorphous PS layer located at both folding surfaces. For T-c <= T-g,T- PS, the crystallization induces a transition of the lamellar orientation from parallel to perpendicular to substrate in between and front of the crystals. In addition, the depletion of materials around the crystals leads to the formation of holes of 1/2 L, leaving the adsorbed monolayer exposure at the bottom of the holes.

Inverted to normal phase transition in solution-cast polystyrene-poly(methyl methacrylate) block copolymer thin films

We have investigated the inverted phase formation and the transition from inverted to normal phase for a cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer in solution-cast films with thickness about 300 nm during the process of the solution concentrating by slow solvent evaporation. The cast solvent is 1, 1,2,2-tetrachloroethane (Tetra-CE), a good solvent for both blocks but having preferential affinity for the minority PMMA block. During such solution concentrating process, the phase behavior was examined by freeze-drying the samples at different evaporation time, corresponding to at different block copolymer concentrations, phi. As phi increases from similar to 0.1 % (nu/nu), the phase structure evolved from the disordered sphere phase (DS), consisting of random arranged spheres with the majority PS block as I core and the minority PMMA block as a corona, to ordered inverted phases including inverted spheres (IS), inverted cylinders (IC), and inverted hexagonally perforated lamellae (IHPL) with the minority PMMA block comprising the continuum phase, and then to the lamellar (LAM) phase with alternate layers of the two blocks, and finally to the normal cylinder (NC) phase with the majority PS block comprising the continuum phase. The solvent nature and the copolymer solution concentration are shown to be mainly responsible for the inverted phase formation and the phase transition process.

Morphologies in solvent-annealed thin films of symmetric diblock copolymer

We have systematically studied the thin film morphologies of symmetric poly(styrene)-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer after annealing to solvents with varying selectivity. Upon neutral solvent vapor annealing, terraced morphology is observed without any lateral structures on the surfaces. When using PS-selective solvent annealing, the film exhibits macroscopically flat with a disordered micellar structure. While PMMA-selective solvent annealing leads to the dewetting of the film with fractal-like holes, with highly ordered nanoscale depressions in the region of undewetted films. In addition, when decreasing the swelling degree of the film in the case of PMMA-selective solvent annealing, hills and valleys are observed with the coexistence of highly ordered nanoscale spheres and stripes on the surface, in contrast to the case of higher swelling degree. The differences are explained qualitatively on the basis of polymer-solvent interaction parameters of the different components.

Boundary effect of relief structure on crystallization of diblock copolymer in thin films

In this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).

Crystallization of weakly segregated poly(styrene-b-epsilon-caprolactone) diblock copolymer in thin films

The surface morphology and crystallization behavior of a weakly segregated symmetric diblock copolymer, poly(styrene-b-6-caprolactone) (PS-b-PCL), in thin films were investigated by optical microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). When the samples were annealed in the molten state, surface-induced ordering, that is, relief structures with uniform thickness or droplets in the adsorbed monolayer, were observed depending on the annealing temperature. The polar PCL block preferred to wet the surface of a silicon wafer, while the PS block wet the air interface. This asymmetric wetting behavior led to the adsorbed monolayer with a PCL block layer having a thickness of around 4.0 nm. The crystallization of PCL blocks could overwhelm the microphase-separated structure because of the weak segregation. In situ observation of crystal growth indicated that the nucleation process preferred to occur at the edge of the thick parts of the film, that is, the relief structures or droplets. The crystal growth rate was presented by the time dependence of the distance between the tip of crystal clusters and the edge. At 22 and 17 degreesC, the average crystal growth rates were 55 +/- 10 and 18 +/- 4 nm/min, respectively.