细胞色素b基因序列与11种熊蜂的系统进化

通过比较一段357bp的细胞色素b的序列,分析了熊蜂属5亚属11种熊蜂系统发育关系。5亚属包括Bombus(5种)、Thoracobombus(3种)、Mendacibombus(1种)、Fervidobombus(1种)和Pyrobombus(1种)。该序列有65个单变异多态位点和71个简约信息多态位点,翻译成119个氨基酸序列后有45个氨基酸变异位点。根据P-距离构建的邻接树(NJ tree)和最大简约树(MP tree)都显示同样的结果:Mendacibombus(B. avinovielllus)分化最早;Fervidobombus(B. pensylvanicus)次之;Pyrobombus(B. impatiens)和Bombus形成姊妹群;Bombus亚属是单系群,其中B. ignitus在所研究的5个种中分化最早。

Detour behavior changes associated with prenatal morphine exposure in 11-day-old chicks

The central nervous system exhibits remarkable plasticity in early life. Prenatal morphine exposure may induce adverse behavioral effects on the neonate and the developing offspring. In the present study, we investigated the effect of prenatal morphine exposure (daily from embryonic days 12-16, 20 mg/kg) on 11-day-old chicks using two forms of spatial paradigms: one trial detour behavior task in which animals must bypass an obstacle to reach the desired goal without any training and detour learning task which required several trials of training to reach the detour criterion. The results showed that, on the condition that chicks could successfully detour in the first trial, morphine exposed chicks exhibited longer detour latency to finish the task, coupled by a preference for turning right versus turning left. In contrast, no significant difference in learning and memory was found in detour learning task between morphine exposed chicks and saline chicks. These findings suggest specific behavioral changes associated with prenatal exposure to opioids during mid to late gestation, also raise attention to the possible health hazard from pregnancy drug use in everyday life. (C) 2010 ISDN. Published by Elsevier Ltd. All rights reserved.

HSF2 mRNA 在热应激和大剂量11酸睾酮诱导恒河猴生精细胞凋亡中的表达变化

为了探讨 HSF2 mRNA 在热应激和超生理剂量睾酮诱导恒河猴生精细胞凋亡中的表达变化, 作者建立了手术诱导单侧隐睾和注射大剂量11酸睾酮(TU)恒河猴动物模型, 应用3′末端标记分析(TUNEL)和原位杂交方法, 检测睾丸细胞的凋亡信号和 HSF2的表达变化. TUNEL 结果显示热应激和超生理剂量睾酮能够诱导生精细胞出现凋亡信号, 它分别于处理后第5天和第30天达到最强, 表明热应激和睾酮干扰精子发生可能是通过生精细胞凋亡的方式来实现的. HSF2 mRNA 水平在生精细胞凋亡早期(凋亡信号达到最强以前)略有降低, 而在凋亡高峰期之后其表达急剧下降. Hsf2基因与作者以前研究的 Hsp70-2基因的表达具有时间上的相关性, 表明 HSF2蛋白可能调控 Hsp70-2基因的表达, 而且 HSF2可能通过多种方式影响精子的发生以及抑制生精细胞的凋亡。

P16蛋白和生精细胞凋亡对热压和11酸睾酮诱导的恒河猴无精子症和少精子症中的作用

探讨了P16蛋白和生精细胞凋亡在热压和11酸睾酮诱导恒河猴无精子症和少精子症中作用间的关系。3^末端标记分析(TUNEL)结果显示热应激和超生理剂量睾酮能够诱导生精细胞出现凋亡信号,它分别于处理后d5和d30达到最强。免疫组化结果显示,热压或TU主要诱导精原细胞和其它生精细胞以及Sertoli细胞P16的表达。P16蛋白的表达在生精细胞凋亡晚期,即隐睾手术d10或注射TUd60后迅速升高并维持高表达,该蛋白在生精细胞凋亡晚期可能通过抑制精原细胞的有丝分裂,扰乱正常的精子发生。

异育银鲫对鱼粉等11种饲料中磷的利用率

于1988年,以三氧化二铬间接指示法,在水温22±2℃条件下,测定了平均体重为55±5g/尾的异育银鲫对鱼粉、肉骨粉、芝麻饼、虾粉、骨粉、菜籽饼、玉米粉、脱氟磷酸氢钙、磷酸二氢钙、磷酸氢钙、磷酸钙的表观消化吸收率。结果表明:异育银鲫对第一、第二、第三磷酸钙的消化吸收率是不同的,分别为81％,65％和32％,此顺序与其溶解性由大到小的顺序一致;在所测试的八种商品饲料中,对骨粉、虾粉和菜籽饼中磷的表观消化吸收率较高,分别为65％,68％和65％;对鱼粉、芝麻饼、肉骨粉三种原料中磷的表观消化吸收率较低,分别是1

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition

Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02) Al2O3 substrate by metalorganic chemical-vapor deposition are reported. Several emission lines not reported before are observed at low temperature. The sharp peak at 3.359 eV is attributed to the exciton bound to the neutral acceptor. Another peak at 3.310 eV represents a free-to-bound, probably a free electron-to-acceptor, transition. The 3.241 and 3.170 eV lines are interpreted as phonon replica lines of the 3.310 eV line. The phonon energy is 70 meV, consistent with the energy of transverse optical E-1 phonon. The optical properties of the lines are analyzed. (C) 2003 American Institute of Physics.