66 resultados para Aretino, Pietro, 1492-1556.


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以1981~2004年间捕获的中华鲟(AcipensersinensisGray)亲鲟样本为研究材料,研究葛洲坝截流24年来中华鲟繁殖季节中坝下30km范围内产卵群体结构的变化情况。测定与统计结果显示,中华鲟雌雄性比由1981~1983年的1.10∶1降低到1987~1989年的0.63∶1,而后上升到2003~2004年的5.86∶1。雌鲟平均体长由1990~1992年的263.1cm增加到1999~2001年的276.7cm,升幅为5.2%(差异极显著);平均体重由1990~1992年的202.4kg

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针对鞭毛虫样品制备中的难点,以Bodomorphaminima ,Hollande 1942为材料,对一类个体微小的异养性鞭毛虫的扫描电镜样品的制备做了初步探讨。以载玻片为载体,0 .1%的多聚赖氨酸为粘附剂,2 %的戊二醛为固定剂,采用临界点法干燥,获得了较为满意的扫描电镜照片。该技术可简化样品制备步骤,减少样品损失,对于其他原生动物样品和游离细胞样品扫描电镜的制备也有积极的借鉴意义。

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A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

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Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

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A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) laser is proposed. It is as easy to process as the ridge waveguide DFB laser and has superior performance. The current aperture can be easily controlled without selective regrowth. The laser exhibits a low threshold of 5.0 mA with 36 dB side mode suppression ratio at the emission wavelength of 1.562 mu m. It emits in a single lobe with full width at half maximum angles of 33.6 degrees and 42.6 degrees for the lateral and vertical fields, respectively. Its beam is more circular than that of the as-grown BH laser because the lower refractive index of oxide compared to the as-grown layer and results in a larger lateral optical confinement. Its characteristic temperature (T-0) is 50 K at room temperature but increases in value at the higher temperature range. (C) 2000 American Institute of Physics. [S0003-6951(00)00812-3].

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线程池被广泛地应用在中间件如Web应用服务器、事务监控器等的实现中。实现线程池的方法主要有半同步/半异步(Half-Sync/Half-Asyn)模式和领导者/跟随者(Leader/Follower)模式。实现了这两种线程池,从理论上分析了它们的性能,并进行了性能实验。实验数据表明Leader/Follower模式具有较高的性能优势。

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The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

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制备了3种结构的器件:A:ITO/SiO2/Alq3/Al,B:ITO/Alq3/SiO2/Al,C:ITO/SiO2/Alq3/SiO2/Al。对于器件A和B,在正向偏压(ITO接正极)下才能观察到发光;而对于器件C,在正向和反向偏压下都可以观察到发光。随着电压升高,器件B和C产生的蓝色发光相对绿光逐渐增强。这主要是由于SiO2中的加速电子碰撞激发Alq3发光层产生热电子,并与空穴形成电子空穴对,复合产生蓝光;而对于器件A,在反向偏压下被热电子碰撞激发出的空穴与正向偏压下从Al电极进入的电子复合形成激子,产生绿色发光。这些结构的器件发光不但可来源于电子与积累的空穴复合,而且也来自固态阴极射线发光。