Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Temperature annealing of tracks induced by ion irradiation of graphite

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing.

Formation of epsilon-FeXN/BN magnetic nanocomposite and its thermodynamic and kinetic analyses

A nanocomposite of nanometer-sized magnetic granular epsilon-FeXN embedded in a nonmagnetic amorphous boron nitride matrix was prepared by ball milling mixture of alpha-Fe and hexagonal boron nitride in argon atmosphere. The grain size of the epsilon-FeXN alloy was about 10-20 nm. The nitrogen concentration in the epsilon-FeXN alloy increases with extending milling time. Both thermodynamic calculation and the present experiment show that iron and nitrogen atoms have higher alloying driving force than iron and boron atoms. Analyses of thermodynamics and kinetics about formation of the epsilon-FeXN alloy suggested that the formation of the epsilon-FeXN alloy is related to amorphization of the hexagonal boron nitride and refinement of the alpha-Fe. II was found from the present experiment that a critical grain size of the alpha-Fe reacting with nitrogen in the amorphous boron nitride is about 8 nm.

THE INFLUENCE OF GAMMA-RADIATION ON POLYAMIDE-1010 AGGREGATE STRUCTURES

The influence of gamma-radiation on polyamide 1010 aggregate structures and crystal damage were examined by using wide angle X-ray diffraction (WAXD) and small angle X-ray scattering (SAXS) techniques. The results revealed that some structural parameters of the aggregated state, the density differences and the degree of crystallinity W-c,W-x, essentially decreased with increasing radiation dose, but the specific surface O-s increased. Crosslinking and scission of irradiated polyamide 1010 samples occurred mainly in amorphous and interphase regions, and crystal damage and amorphization induced by gamma-radiation spread from the interphase and extended into the crystal phase with increasing radiation dose. This result also indicated that the (010) reflection with the hydrogen bond was more susceptible to the action of radiation.