Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Laser Melted TiC Reinforced Nickel Aluminide Matrix in situ Composites

Titanium carbide reinforced nickel aluminide matrix in situ composites were produced using a newly patented laser melting furnace. Microstructure of the laser melted TiC/(Ni3Al–NiAl) in situ composites was characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results showed that the constituent phases in the laser melted in situ composites are TiC, Ni3Al and NiAl. Volume fraction of TiC and NiAl increase with increasing content of titanium and carbon. The growth morphology of the reinforcing TiC carbide has typically faceted features, indicating that the lateral growth mechanism is still predominant growth mode under rapid.

Wave dynamic processes induced by a supersonic projectile discharging from a shock tube

A numerical study on wave dynamic processes occurring in muzzle blast flows, which are created by a supersonic projectile released from the open-end of a shock tube into ambient air, is described in this paper. The Euler equations, assuming axisymmetric flows, are solved by using a dispersion-controlled scheme implemented with moving boundary conditions. Three test cases are simulated for examining friction effects on the muzzle flow. From numerical simulations, the wave dynamic processes, including two blast waves, two jet flows, the bow shock wave and their interactions in the muzzle blasts, are demonstrated and discussed in detail. The study shows that the major wave dynamic processes developing in the muzzle flow remain similar when the friction varies, but some wave processes, such as shock-shock interactions, shock-jet interactions and the contact surface instability, get more intensive, which result in more complex muzzle blast flows.

Analytical Study of Idealized Two-Dimensional Cellular Detonations

In this study, the idealized two-dimensional detonation cells were decomposed into the primary units referred to as sub-cells. Based on the theory of oblique shock waves, an analytical formula was derived to describe the relation between the Mach number ratio through triple-shock collision and the geometric properties of the cell. By applying a modified blast wave theory, an analytical model was developed to predict the propagation of detonation waves along the cell. The calculated results show that detonation wave is, first, strengthened at the beginning of the cell after triple-shock collision, and then decays till reaching the cell end. The analytical results were compared with experimental data and previous numerical results; the agreement between them appears to be good, in general.

Progress In Modeling Of Fluid Flows In Crystal Growth Processes

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

Microstructure and mechanical properties of a novel Zr-based bulk metallic glass composite

Zr48.5Cu46.5Al5 bulk metallic glass (BMG) composites with diameters of 3 and,4 mm were prepared through suction casting in an arc melting furnace by modulating the alloy composition around the monothetic BMG composition of the high glass forming ability. Microstructural characterization reveals that the composites contain micron-sized CuZr phase with martensite structure, as well as nano-sized Zr2Cu crystalline particles and Cu10Zr7 plate-like phase embedded in an amorphous matrix. Room temperature compression tests showed that the composites exhibited significant strain hardening and obvious plastic strain of 7.7% for 3 nun and 6.4% for 4 nun diameter samples, respectively.

Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals

The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed.

爆炸载荷下三峡三期纵向围堰响应的离散元分析

通过离散元方法的数值模拟，首先对清江高洲二期碾压混凝土围堰在爆炸载荷下的响应进行了分析，经与实验结果比较，得到了较合适的材料参数；然后根据这些材料参数并结合实验提供的部分数据，分析了三峡三期纵向围堰在爆炸载荷条件下的振动速度随离爆源距离衰减的变化规律，以及振动速度随时间的变化规律等。计算结果表明，三峡三期围堰爆破拆除时振动安全问题集中在纵向围堰拆除，研究爆破载荷作用下纵向围堰的振动响应是非常重要的。

爆炸容器内冲击波系演化及壳体响应的数值研究

对中心装药爆炸后冲击波的产生、传播和壳体动态响应全过程进行了数值研究。认为RDX瞬时爆炸，爆炸近场采用自相似解；冲击波传播和波系演化采用PPM(the Piecewise Parabolic Method)格式求解Euler方程；壳体响应采用有限元方法求解拉氏坐标系下由虚功原理得到的动力学方程。壳体内壁面边界条件分别采用强耦合和弱耦合方法处理。结果表明：（1）当装药量相同时，薄壁壳体振型比厚壁宙体复杂得多，振幅也大；（2）当装药量不同，壳体厚度相同时，爆炸场冲击波的演化过程不同；（3）对少量装药，产生的冲击波强度低，壳体变形小，是否考虑内边界运动，对计算结果的影响不大；（4）在本文条件下，爆炸容器封头顶点所受的载荷最大，是取易发生破坏的地方，侧壁与爆点所在横截面的交线，也易破坏。

The Characteristics of Semi-Cokes --The Solid Residues from Coal Partial Gasification

In this paper the proximate analysis and ultimate analysis of sulfur in different semi-cokes generated from Rizhao bituminous coal and Beijing anthracite under different temperatures is done. Also the tendency of the contents of volatile, ash, fixed carbon and sulfur in different semi-cokes along with the different preparation temperatures is studied. Then the combustion experiment of semi-cokes in the drop-tube furnace system was carried out, and the kinetic parameters of different semi-cokes ware calculated.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Propagation of Explosion Wave in Hard-Soft-Hard Layered Media

The paper presents a reasonable analysis for dynamic response and failure process of a plane multi-layered media, which are subjected to a blast loading. This blast loading is induced by a cylindric explosive put on the center of top surface of the layered media. With the help of numerical simulation technique provided by LS-DYNA software, the whole process of explosion wave propagation and attenuation can be revealed. The feature of local failure around the blasting site is also discussed in some detail. Our focus will be on the explosion wave attenuation for the hard-soft-hard sandwich layers. As seen in the paper, the computational results are delivered in a feasible way by comparing with experimental data.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Temperature controlled filamentation in argon gas

Temperature controlled filamentation is experimentally demonstrated in a temperature gradient gas-filled tube. The proper position of the tube is heated by a furnace and two ends of the tube are cooled by air. The experimental results show that multiple filaments are shrunken into a single filament or no filament only by increasing the temperature at the beginning of the filament. This technique offers another degree of freedom of controlling the filamentation and opens a new way for intense monocycle pulse generation through gradient temperature in a noble gas.