Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Investigation of absorption of nanocrystalline silicon

Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiO2 films fabricated by plasma enhanced chemical vapor deposition technique. In conjunction with the micro-Ramam spectra, the absorption spectra of the films have been investigated. The blue-shift of absorption edge with decreasing size of silicon crystallites is due to quantum confinement effect. It is found that nanocrystalline silicon is of an indirect band structure, and that the absorption presents an exponential dependance absorption coefficient on photon energy ii! the range of 2.0-3.0 eV, and a sub-band appears in the the range of 1.0-1.5 eV. We believe that the exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the Sub-band absorption is ascribed to transitions between the amorphous silicon states existing in the films.

Spectroscopic properties of anisotropic absorption in a neodymium-doped YAlO3 laser crystal

Absorption spectra of YAlO3:Nd for the three crystallographic axes are investigated at room temperature, The spectral strengths indicate that the absorption coefficient of YAlO3:Nd is anisotropic. The anisotropy of the local electric field acting on the rare-earth ion in a laser crystal is considered, An extended Judd-Ofelt theory is applied to calculate the absorption cross sections and oscillator strengths of the electric-dipole transitions in the different principal directions. Three groups of the phenomenological parameters are derived from a least-squares-fitting procedure. We also analyze theoretically the anisotropy of the optical absorption of YAlO3:Nd crystal in detail. (C) 1997 American Institute of Physics.

Quantitative analysis analysis of element concentration in Al alloy by using laser-induced breakdown spectroscopy

Laser-induced breakdown plasma is produced by using Q-switched Nd: YAG laser operating at 532 nm, which interacts with the Al alloy sample target in air. The spectral lines in the 230-440 nm wavelength range have been identified, and based on the calibration-free method, the mass concentration of Al alloy are obtained, which is in good agreement with the standard value of the sample.

Novel NIR-absorbing conjugated polymers for efficient polymer solar cells: effect of alkyl chain length on device performance

Three low bandgap conjugated polymers, i.e., PDTPBT-C8, PDTPBT-C6 and PDTPBT-C5, which consist of alternating N-alkyl dithieno[3,2-b: 2',3'-d] pyrrole and 2,1,3-benzothiadiazole units and carry 1-octylnonyl, 1-hexylheptyl and 1-pentylhexyl as side chains, respectively, were synthesized. These polymers show strong absorption in the wavelength range of 600-900 nm with enhanced absorption coefficient as the length of alkyl chain decreases. The film morphology of the polymers and 1-(3-methoxycarbonyl) propyl-1-phenyl-[6,6]-C-61 (PCBM) blends is also dependent on the alkyl chain length. As the length decreases, the film becomes more uniform and the domian size decreases from 400-900 nm for PDTPBT-C8 to similar to 50 nm for PDTPBT-C5.

Remarkable changes in the optical properties of CeO2 nanocrystals induced by lanthanide ions doping

Highly uniform and well-dispersed CeO2 and CeO2:Eu3+ (Sm3+, Tb3+) nanocrystals were prepared by a nonhydrolytic solution route and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), UV/vis absorption, and photoluminescence (PL) spectra, respectively. The result of XRD indicates that the CeO2 nanocrystals are well crystallized with a cubic structure. The TEM images illustrate that the average size of CeO2 nanocrystals is about 3.5 nm in diameter. The absorption spectrum of CeO2:Eu3+ nanocrystals exhibits red-shifting with respect to that of the undoped CeO2 nanocrystals. Under the excitation of 440 nm (or 426 nm) light, the colloidal solution of the undoped CeO2 nanocrystals shows a very weak emission band with a maximum at 501 nm, which is remarkably enhanced by doping additional lanthanide ions (Eu3+, Tb3+, Sm3+) in the CeO2 nanocrystals. The emission band is not due to the characteristic emission of the lanthanide ions but might arise from the oxygen vacancy which is introduced in the fluorite lattice of the CeO2 nanocrystals to compensate the effective negative charge associated with the trivalent ions.

中子相衬层析成像方法

介绍了中子相衬和中子层析的工作原理，提出了中子相衬层析成像方法．这种方法兼备了相衬和层析的各自优点，不采用干涉术，能高分辨率地重构待测样品的三维空间位相分布，能测试和分辨吸收系数非常相近样品的空间结构．

非相对论线偏振激光下的J×B加热

利用解析的方法研究了非相对论线偏振激光与等离子体相互作用中的J×B加热吸收机理,建立了一种包含两类有质动力效应在内的自洽理论.探讨了密度轮廓修正下的J×B加热机理,给出了相应的吸收系数随激光场强度变化的关系曲线.研究发现,当激光场强度A0=20时,J×B加热所导致的吸收系数fabs约为2.8%.

混浊介质中光子传播路径的蒙特卡罗模拟研究

发展了一种新的蒙特卡罗方法用于研究超短激光脉冲进入混浊介质后的光子传播路径。这种方法可以获得任一时刻的光子最可几传播路径，研究了混浊介质的光学参数如何影响光子的最可几传播路径，发现吸收系数不影响光子的最可几传播路径。

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200degreesC for 30 min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190degreesC and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

一种新的芴类衍生物的三光子吸收诱导荧光和光限幅效应研究

通过对新合成的芴的一种具有对称性衍生物4-2-（7-（4-氨基苯乙烯基）-9，9-二（2-乙基己基）-9H-芴-2-）乙烯基）苯胺（BASF）的DMF溶液的研究，发现其具有很强三光子吸收频率上转换荧光发射特性，实验测出上转换荧光的波长范围是456-775nm，在510nm处的荧光强度与入射光强的三次方成正比．在0．03mol／L的浓度下就有明显的三光子吸收诱导的光限幅效应．非线性吸收系数和吸收截面分别为y=4．34×10^20 cm^3／W^2和σ3=2．4×10^-39 cm^6／W^2．

The analysis of the transient temperature distribution of double-slab Nd:YAG laser medium

A novel double-slab Nd:YAG laser, which uses face-pumped slab medium cooled by liquid with different temperatures on both sides, is proposed. The thermal distortion of wavefront caused by the non-uniform temperature distribution in the laser gain media can be self-compensated. According to the method of operation, the models of the temperature distribution and stress are presented, and the analytic solutions for the model are derived. Furthermore, the numerical simulations with pulse pumping energy of 10 J and repetition frequencies of 500 and 1000 Hz are calculated respectively for Nd:YAG laser medium. The simulation results show that the temperature gradient remains the approximative linearity, and the heat stress is within the extreme range. Then the absorption coefficient is also discussed. The result indicates that the doping concentration cannot be too large for the high repetition frequency laser. It has been proved that the high repetition frequency, high laser beam quality, and high average output power of the order of kilowatt of Nd: YAG slab laser can be achieved in this structure.

Al2O3,B2O3对磷酸盐包边玻璃形成区和物化性质影响研究

研究了Al2O3 ,B2O3对P2O5-Al2O3-B2O3-ZnO-Na2O-CuCl玻璃形成区的影响规律；包边玻璃的物化性质随B/(B+Al)的变化规律；以及特定组分包边玻璃的透射光谱和吸收系数。这些研究工作对高功率大尺寸钕磷酸盐激光包边玻璃的研制具有非常重要的意义。

激光玻璃与包边玻璃的折射率匹配

从理论上详细探讨了基质激光玻璃与包边玻璃的折射率匹配与剩余反射率的关系,并从实验上验证了折射率匹配越好,吸收系数与包边玻璃厚度的乘积越大,则剩余反射率越低,从而对激光放大器中寄生振荡的抑制越好,增益也就越高。