Highly stable, diode-pumped Nd : YLF regenerative amplifier

We present the design and experimental results for a diode pumped Nd:YLF regenerative amplifier applied to amplify a nanosecond laser pulse. Numerical simulation shows that the maximum output energy and the best stability can be obtained when the regenerative amplifier operates in a saturated mode for all pulse duration and temporal profiles. Using extra post-pulse is a good method to decrease the square-pulse distortion caused by gain saturation effect. The amplifier shows output energy of 4.2mJ with a total energy gain of more than 107 and output energy stability of better than 1% rms. When extra post-pulse is added, square-pulse distortion is decreased from 1.33 to 1.17 for the amplifier that is seeded with an optical pulse of 3 ns.

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

A four-passed ytterbium-doped fiber amplifier

In this paper, a four-passed ytterbium-doped fiber amplifier (YDFA) is discussed. The gain and the pump and the signal light propagation characteristics of the four-passed YDFA are described. It is found that, while using a shorter length of the fiber, a four-passed fiber amplifier can realize the same output power as a single-pass fiber amplifier, and, for the same fiber lengths, a four-passed fiber amplifier offers a significantly higher power than its single-pass counterpart. (C) 2006 Elsevier Ltd. All rights reserved.

Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass for waveguide amplifier application

Tungsten-tellurite glass with molar composition of 60TeO(2)-30WO(3)-10Na(2)O has been investigated for developing planar broadband waveguide amplifier application. Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass have been discussed. The results show that the introduction Of WO3 increases significantly the glass transition temperature and the maximum phonon energy. Er3+-doped tungsten-tellurite glass exhibits high glass transition temperature (377 degrees C), large emission cross-section (0.91 x 10(-20) cm(2)) at 1532 nm and broad full width at half maximum (FWHM), which make it preferable for broadband Er3+-doped waveguide amplifier application. (c) 2005 Elsevier B.V. All rights reserved.

Gain and noise figure of a double-pass waveguide amplifier based on Er/Yb-doped phosphate glass

A waveguide amplifier is fabricated by Ag+-Na+ two-step ion exchange on Er/Yb-doped phosphate glass. The spectroscopic performance of glass and the properties of channel waveguide are characterized. A double-pass configuration is adopted to measure the gain and noise figure (NF) of the waveguide amplifier, and the comparison of gain and NF for the single and double-pass configuration of the waveguide amplifier is presented. The results show that the double-pass configuration can make the gain increase from 8.8dB (net gain 2.2dB/cm) of the single-pass one to 14.6 dB (net gain 3.65 dB/cm) for small input power at 1534 nm, and the NF are all lower than 5.5dB for both the configurations.

Spectroscopic properties of Er3+-doped tellurite glass for 1.55 mu m optical amplifier

Er3+-doped TeO2-BaO (Li2O, Na2O)-La2O3 tellurite glass system was prepared and their density, characteristic temperatures and optical properties were determined and investigated. For the TeO2-BaO-La2O3-Er2O3 system, composition with 10 mol% BaO presented the highest thermal stability and good infrared transmittance. Intense and broad 1.53 mu m infrared fluorescence were observed under 977 nm diode laser excitation and the most full width at half-maximum (FWHM) is similar to 60nm. According to absorption spectrum, we calculated the optical parameters by means of Judd-Ofelt and McCumber theory such as the fluorescence lifetimes which are about 2.72-3.25 ms and the maximum emission cross-sections which are similar to 1.0pm(2) at 1.531 mu m. The sigma(e) x FWHM value of composition with 10 mol% BaO for gain bandwidth is similar to 600 exceeding those in silicon and phosphate glasses. Our results indicated this kind of tellurite glasses could be used as an ideal host glass for optical amplifier. (c) 2005 Elsevier B.V. All rights reserved.

Bismuth-activated luminescent materials for broadband optical amplifier in WDM system

New broadband near infrared luminescence covering the whole work windows (1260-1625 nm) of the current wavelength division multiplexing (WDM) system was found from bismuth-activated M2O-Al2O3-SiO2 (M = Li, Na) and Li2O-Ta2O5-SiO2 glasses at room temperature in the case of 808 nm-laser excitation. But the near infrared luminescence mechanism of the bismuth-activated glasses is not well understood up to now. The figure-of-merits of bandwidth and gain of the glasses are better than those of Er3+-doped silicate glasses and Ti3+ doped sapphire, implying they are the promising gain-medium candidates for the broadband amplifiers and the widely tunable laser sources. (c) 2007 Elsevier B.V. All rights reserved.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.

Degenerate four-wave mixing based all-optical wavelength conversion in a semiconductor optical amplifier and highly-nonlinear photonic crystal fiber parametric loop mirror

The idler is separated from the co-propagating pump in a degenerate four-wave mixing (DFWM) with a symmetrical parametric loop mirror (PALM), which is composed of two identical SOAs and a 70 m highly-nonlinear photonic crystal fiber (HN-PCF). The signal and pump are coupled into the symmetrical PALM from different ports, respectively. After the DFWM based wavelength conversion (WC) in the clockwise and anticlockwise, the idler exits from the signal port, while the pump outputs from its input port. Therefore, the pump is effectively suppressed in the idler channel without a high-speed tunable filter. Contrast to a traditional PALM, the DFWM based conversion efficiency is increased greatly, and the functions of the amplification and the WC are integrated in the smart SOA and HN-PCF PALM. (C) 2008 Elsevier B.V. All rights reserved.

Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells

A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current. (C) 2004 Society of Photo-Optical Instrumentation Engineers.