Copolymerization of carbon dioxide and cyclohexene oxide catalyzed by aluminum porphyrin-quaternary ammonium salt in the presence of bulky lewis acid

Chloro( 5,10,15,20-tetraphenyl-porphyrinato)-aluminum/tetraethylammonium bromide ( Et4NBr) in combination with bulky Lewis acid was used for the copolymerization of CO2 and cyclohexene oxide ( CHO). Bulky Lewis acid having substituents at the ortho positions of the phenolate ligands, like methylaluminum bis(2,6-di-tert-butyl-4-methylphenolate), significantly shortened the induction period and raised the catalytic activity, the corresponding turnover frequency reached 44.9 h(-1) in 9 h, which was 23.8% higher than that from ( TPP)AlCl/Et4NBr binary catalyst. The resulting polycarbonate has carbonate linkage over 93% with number average molecular weight of ( 4.5-6.5) x 10(3) and polydispersity index below 1.10.

High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter

We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.

Interface Fracture Property Of Peo Ceramic Coatings On Aluminum Alloy

This paper combines the four-point bending test, SEM and finite element method to study the interface fracture property of PEO coatings on aluminum alloy. The interface failure mode of the coating on the compression side is revealed. The ceramic coating crack firstly along the 45 degrees to the interface, then the micro crack in the coating deduces the interface crack. The plastic deformation observed by SEM shows excellent adhesion property between the coating and substrate. The plastic deformation in the substrate is due to the interfacial crack extension, so the interface crack mode of PEO coatings is ductile crack. The results of FEM show that the compression strength is about 600 MPa. (C) 2008 Elsevier B.V. All rights reserved.

Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21 000 cd/cm(2), 6.5 cd/A, and 3.5 lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs2CO3) doped Alq(3) as the electron injection layer, where the efficiencies are only 4.5 cd/A and 2.2 lm/W.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency.

Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

Improved performances of organic light-emitting diodes with metal oxide as anode buffer

We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO). The significant features of MoO3 as a buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of MoO3 thickness. A green OLED with structure of ITO/MoO3/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidene (NPB)/NPB: tris(8-hydroxyquinoline) aluminum (Alq(3)):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/Alq(3)/LiF/Al shows a long lifetime of over 50 000 h at 100 cd/m(2) initial luminance, and the power efficiency reaches 15 lm/W. The turn-on voltage is 2.4 V, and the operational voltage at 1000 cd/m(2) luminance is only 6.9 V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and interface stability at anode.

A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

A dinuclear aluminum 8-hydroxyquinoline complex (DAlq(3)) with improved electron mobility was designed for organic light-emitting diodes. The electron mobility in DAlq(3) was determined via transient electroluminescence (EL) from bilayer devices with structure of indium tin oxide (ITO)/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidine (NPB)/DAlq(3)/Mg:Ag. It was found that the electron mobility in DAlq(3) is between 3.7-8.4x10(-6) cm(2)/Vs at electric fields ranging between 1.2x10(6) and 4.0x10(6) V/cm, which is a factor of two higher than that in Alq(3). The DAlq(3) also shows a higher EL efficiency of 2.2 cd/A (1.2 Lm/W), as compared to Alq(3) with an EL efficiency of 2.0 cd/A (1.0 Lm/W), which is attributed to more balanced electron and hole recombination due to the improved electron mobility of DAlq(3).

Epoxidation of propylene with dilute H2O2 over titanium silicalite containing trace aluminum

Titanium silicalite (TS-1) was successfully synthesized by using TPABr as the template and silica sol as silicon source in a 100 l stainless steel autoclave. IR, XRD, UV--vis, elemental analysis, and (2)7Al and (3)1P MAS NMR were used to characterize the synthesized products. The results show that the synthesized material has an MFI structure with high crystallinity and large crystal size and two kinds of titanium species. Trace aluminum in silica sol is also incorporated into the zeolite framework. The synthesized TS-1 exhibits high activity in the epoxidation of propylene with dilute H2O2 with high selectivity to methyl mono-ethers and low selectivity to propylene oxide (PO). The low selectivity toward PO is due to the residual acidity onto TS-1. The selectivity of PO can reach up to 90% through adjusting the pH of the reaction mixture. Extra amounts of base decrease the H2O2 utilization and the H2O2 conversion. However, in over acid-treated TS-1 in which part removal of extra-framework titanium takes place, the utilization of H2O2 is quite different: for the low Si/Ti ratio of TS-1, the H2O2 utilization increases. But the utilization of H2O2 does not change for the high Si/Ti ratio TS-1. Thermal analysis shows that the as-synthesized TS-1 exhibits high activity and thermal stability in the calcined range 540-900 degreesC.

Study on Mechanical Properties of Nanocrystal Surface Layer of an Aluminum Alloy

The nanocrystal surface layer of an aluminum alloy induced by High Speed Shot Peening (HSSP) was investigated in this paper. The results of nanoindentation experiment show that the elastic modulus and the hardness of nanocrystal surface layer increased,by 8% and 20%, respectively. The elastic modulus and the hardness appear to be independent of the distance from nanocrystalized surface and the process time.

Experimental investigation of the shear strength of a unidirectional carbon/aluminum composite under dynamic torsional loading

In this paper, the dynamic shear strength of a unidirectional C/A356.0 composite and A356.0 alloy, respectively, are measured with a split Hopkinson torsional bar (SHTB) technique. The results indicate that the carbon fibers make very little contribution to the enhancement of the shear strength of the matrix material. The microscopic inspections on the fracture surface of the composite show a multi-scale zigzag feature. This implies that there is a complicated shear failure mechanism in the unidirectional carbon/aluminum composite.