The microstructures and mechanical properties of cast Mg-Zn-Al-RE alloys

The microstructures and mechanical properties of cast Mg-Zn-Al-RE alloys with 4 wt.% RE and variable Zn and At contents were investigated. The results show that the alloys mainly consist of alpha-Mg, Al2REZn2, Al4RE and tau-Mg-32(Al,Zn)(49) phases. and a little amount of the beta-Mg17Al12 phase will also be formed with certain Zn and At contents. When increasing the Zn or At content, the distribution of the Al2REZn2 and Al4RE phases will be changed from cluster to dispersed, and the content of tau-Mg-32(Al,Zn)(49) phase increased gradually. The distribution of the Al2REZn2 and Al4RE phases, and the content of beta- or tau-phase are critical to the mechanical properties of Mg-Zn-Al-RE alloys.

Effect of substituting cerium-rich mischmetal with lanthanum on microstructure and mechanical properties of die-cast Mg-Al-RE alloys

Die-cast Mg-4Al-4RE-0.4Mn (RE = Ce-rich mischmetal) and Mg-4Al-4La-0.4Mn magnesium alloys were prepared successfully and their microstructure, tensile and creep properties have been investigated. The results show that two binary Al-RE phases, Al11RE3 and Al2RE, are formed along grain boundaries in Mg-4Al-4RE-0.4Mn alloy, while the phase compositions of Mg-4Al-4La-0.4Mn alloy mainly consist of alpha-Mg phase and Al11La3 phase. And in Mg-4Al-4La-0.4Mn alloy the Al11La3 phase occupies a large grain boundary area and grows with complicated morphologies, which is characterized by scanning electron microscopy in detail. Changing the rare earth content of the alloy from Ce-rich mischmetal to lanthanum gives a further improvement in the tensile and creep properties, and the later could be attributed to the better thermal stability of Al11La3 phase in Mg-4Al-4La-0.4Mn alloy than that of Al11RE3 phase in Mg-4Al-4RE-0.4Mn alloy.

Preparation of W-Al-Mo ternary alloys by mechanical alloying

Single phase WxAl(50)Mo(50)-X (X=40, 30, 20 and 10) powders have been synthesized directly by mechanical alloying (MA). The structural evolutions during MA and subsequent as-milled powders by annealing at 1400 degrees C have been analyzed using X-ray diffraction (XRD). Different from the Mo50Al50 alloy, W40Al50Mo10 and W30Al50Mo20 alloys were stable at 1400 degrees C under vacuum. The results of high-pressure sintering indicated that the microhardnesses of two compositions, namely W40Al50Mo10 and W30Al50Mo20 alloys have higher values compared with W50Al50 alloy.

A Thermodynamic Constitutive Model for Stress Induced Phase Transformation in Shape Memory Alloys

In this paper a thermodynamic constitutive model is developed for stress induced phase transformation in single crystalline and polycrystalline shape memory alloys (SMAs). Volume fractions of different martensite variants are chosen as internal variables to describe the evolution of microstructure state in the material. This model is then used in prediction the transformation behavior of a SMA (Cu-Al-Zn-Mn) under complex thermomechanical load (including complete and incomplete transformation in mechanical cycling, and proportional/non-proportional loading). (C) 2002 Elsevier Science Ltd. All rights reserved.

Theory Of Phase Transformation And Reorientation In Single Crystalline Shape Memory Alloys

A constitutive model, based on an (n + 1)-phase mixture of the Mori-Tanaka average theory, has been developed for stress-induced martensitic transformation and reorientation in single crystalline shape memory alloys. Volume fractions of different martensite lattice correspondence variants are chosen as internal variables to describe microstructural evolution. Macroscopic Gibbs free energy for the phase transformation is derived with thermodynamics principles and the ensemble average method of micro-mechanics. The critical condition and the evolution equation are proposed for both the phase transition and reorientation. This model can also simulate interior hysteresis loops during loading/unloading by switching the critical driving forces when an opposite transition takes place.

Microstructure and mechanical properties of Zr-Cu-Al bulk metallic glasses

Zr49Cu46Al5 and Zr48.5Cu46.5Al5 bulk metallic glasses(BMGs) with diameter of 5 mm were prepared through water-cooled copper mold casting. The phase structures of the two alloys were identified by X-ray diffractometry(XRD). The thermal stability was examined by differential scanning calorimetry(DSC). Zr49Cu46Al5 alloy shows a glass transition temperature, T, of about 689 K, an crystallization temperature, T-x, of about 736 K. The Zr48.5Cu46.5Al5 alloy shows no obvious exothermic peak. The microstructure of the as-cast alloys was analyzed by transmission electron microscopy(TEM). The aggregations of CuZr and CuZr2 nanocrystals with grain size of about 20 nm are observed in Zr49Cu46Al5 nanocrystalline composite, while the Zr48.5Cu46.5Al5 alloy containing many CuZr martensite plates is crystallized seriously. Mechanical properties of bulk Zr49Cu46Al5 nanocrystalline composite and Zr48.5Cu46.5Al5 alloy measured by compression tests at room temperature show that the work hardening ability of Zr48.5Cu46.5Al5 alloy is larger than that of Zr48.5Cu46.5Al5 alloy.

Atomistic investigation of the effects of temperature and surface roughness on diffusion bonding between Cu and Al

Molecular dynamics (MD) simulations are carried out to analyze the diffusion bonding at Cu/Al interfaces. The results indicate that the thickness of the interfacial layer is temperature-dependent, with higher temperatures yielding larger thicknesses. At temperatures below 750 K, the interface thickness is found to increase in a stepwise manner as a function of time. At temperatures above 750 K, the thickness increases rapidly and smoothly. When surface roughness is present, the bonding process consists of three stages. In the first stage, surfaces deform under stress, resulting in increased contact areas. The second stage involves significant plastic deformation at the interface as temperature increases, resulting in the disappearance of interstices and full contact of the surface pair. The last stage entails the diffusion of atoms under constant temperature. The bonded specimens show tensile strengths reaching 88% of the ideal Cu/Al contact strength. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

原位生成TiC粒子在快凝Al-Fe合金中变化行为的研究

通过OM，SEM和TEM等手段研究了在常规铸态以及快速凝固Al-8wt％Fe合金中原位生成TiC粒子时棚组成及显微组织的变化。同时结合利用外加法制备的常规铸态和快速凝固Al-8wt％Fe/TiC合金的娃微组织变化，得出了原位反应TiC粒子的生成及其在合金熔体中的变化行为：在常舰铸态下生成的尺寸较大的八岍体TiC颗粒在快速凝固过程中将发生全部或部分溶解，在随后的怏冷过程中将重新析出并形成细小的TiC粒子，原位生成的TiC粒子在快速凝固过程中同样可以对α-Al起到促发形核的作用。

The mechanism of PEO process on Al–Si alloys with the bulk primary silicon

This study focuses on mechanism of ceramic coating on Al-Si alloys with bulk primary Si using plasma electrolytic oxidation (PEO) technology. Al-Si alloys with 27-32% Si in weight were used as substrates. The morphologies, composition and microstructure of PEO coatings were investigated by scanning electron microscopy (SEM) with energy dispersive X-ray system (EDX). Results showed that the PEO process had four different stages. The effect of bulk Si is greatly on the morphology and composition of coatings at first three stages. Anodic oxide films formed on Al and Si phases, respectively. When the voltage exceeded 40 V, glow appeared and concentrated on the localized zone of interface of Al and Si phase. Al-Si-O compounds formed and covered on the dendrite Si phase surface, and the coating on bulk Si, which was silicon oxide, was rougher than that on other phase. If the treatment time was long enough, the coatings with uniform surface morphologies and elements distribution will be obtained but the microstructure of inner layer is looser due to the bulk Si.

Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). AlInGaN quaternary alloys with different compositions were acquired by changing the Al cell's temperature. The streaky RHEED patterns were observed during AlInGaN quaternary alloys growth. Scanning Electron Microscope (SEM), Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN quaternary alloys grow on the GaN buffer in the layer-by-layer growth mode. When the Al cell's temperature is 920 degrees C, the Al/In ratio in the AlInGaN quaternary alloys is about 4.7, and the AlInGaN can acquire better crystal and optical quality. The X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectively.

Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

The temperature dependence of the formation of nano-scale indium clusters in InAlGaN quaternary alloys, which are grown by metalorganic chemical vapour deposition on GaN/Si(111) epilayers, is investigated. Firm evidence is provided to support the existence of phase separation, or nano-scale In-rich clusters, by the combined results of high-resolution transmission electron microscopy (HRTEM), high-resolution x-ray diffraction (HRXRD) and micro-Raman spectra. The results of HRXRD and Raman spectra indicate that the degree of phase separation is strong and the number of In clusters in the InAlGaN layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the In and Al incorporated into the InAlGaN quaternary alloys. The detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (LT-PL). We conclude that the ultraviolet (UV) emission observed in the quaternary InAlGaN alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters.

A study of the growth and optical properties of AlInGaN alloys

We have studied the growth and optical properties of AlInGaN alloys in this article. By the measurement of three samples, we found that the incorporation of In decreases with the increase of temperature, while there is nearly no change for the incorporation of Al. The sample grown at the lowest temperature had the best material and optical properties, which owes to the high In component, because the In component can reduce defects and improve the material quality. We also used the time-resolved photoluminescence(PL) to study the mechanism of recombination of carriers, and found that the time dependence of PL intensity was not in exponential decay, but in stretched-exponential decay. Through the study of the character of this decay, we come to the conclusion that the emission comes from the recombination of localized excitons. Once more, this localization exhibites the character of quantum dots, and the stretched, exponential decay results from the hopping of carriers between different localized states. In addition, we have used the relation of emission energy dependence of carrier's lifetime and the character of radiative recombination and non-radiative combination to confirm our conclusion.