173 resultados para 331.105.44[82]


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岜盆保护区现有白头叶猴136只,分属19个两性群、5个独雄群和1个双雄群,平均群大小5.44只/群,群密度0.26群/km~(2),种群密度1.44只/km~(2),白头叶猴的年龄组成为:成年猴80只,占58.82%,青年猴36只,占26.47%,幼猴20只,占14.71%。

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利用在信阳农村养猪场中的2个3.3 m深的污水氧化塘进行光合细菌和水浮莲净化污水的研究。1#氧化塘加入8×108mL-1光合细菌50 L,2#氧化塘加入水浮莲(100株.m-2)。为期1 a的试验结果表明:经光合细菌和水浮莲的共同作用,总磷下降了41.8%~76.0%,总氮下降了61.8%~81.0%,COD下降了66.8%~79.1%,BOD5下降了64.8%~82.3%。显示光合细菌和水浮莲能够明显改善养猪场污水水质。

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长江中下游是我国淡水贝类资源分布最为集中的地区。由于人类活动加剧,该区域贝类受到严重威胁。为系统评估贝类物种现状,于2003年5月至2005年6月对13个典型湖泊进行了系统调查。共采集贝类69种,其中中国特有种44种。不同类型湖泊贝类的组成差别较大。通江湖泊的物种明显较丰富,尤其是适应流水生境的种类,如河螺属、短沟蜷属及蚌科的种类。大型通江湖泊鄱阳湖和洞庭湖的贝类分别有53种和57种,占总数的76.8%和82.6%。阻隔湖泊的物种较少,在4—19种之间。对67种贝类濒危等级的评价结果表明,近危及受威胁的种

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巨须裂腹鱼(Schizothorax macropogon)是雅鲁藏布江的重要经济鱼类。作者利用2004~2006年在雅鲁藏布江水系收集的293尾样本,以背鳍条磨片作为主要鉴定年龄的材料,对西藏雅鲁藏布江巨须裂腹鱼种群进行了年龄结构和生长特性的研究。结果表明,巨须裂腹鱼的雅鲁藏布江种群由2~14龄和16龄共14个龄组组成。其中优势龄组为4~6龄(占74.85%)。群体总性比为(♀∶♂)=1∶0.881。体长与体重的关系方程分别为:W♀=0.023L2.904(♀),W♂=0.018L2.962(♂),属于

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首次报道了亚东鲑在青藏高原河流中的生长特点。对1999—2002年间在亚东河共采集的462尾亚东鲑(体长范围为93—364mm)进行了年龄与生长的研究。通过鳞片对其中302尾进行年龄鉴定并建立Von Bertalanffy生长方程:雌性(♀)Lt=709.44[1-e-0.1656(t-0.0845)](R2=0.9993,n=132)和Wt=6017.46[1-e-0.1656(t-0.0845)]2.9724(R2=0.9845,n=132);雄性(♂)Lt=797.82[1-e-0.1428(t-0

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根据1999~2001年的野外调查数据,研究了湖北鄂州梁子湖自然保护区的生物多样性资源,并对其进行了评价。结果表明:有浮游藻类71种,高等植物331种,浮游动物89种,底栖动物49种,鱼类94种,两栖类8 种,爬行类15种,鸟类166种,兽类21种。其中:国家重点保护野生动物25种,占湖北省同类总种数的22.93%;湖北省省级重点保护野生动物64种,占湖北省同类总种数的44.75%;国家重点保护植物4种。认为梁子湖自然保护区水质污染轻,生态系统完整、自然,生物多样性十分丰富,在长江中下游湿地中具典型性和代

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Ptychobarbus dipogon is an endemic fish in the Yarlung Tsangpo River, but its biology is poorly known. We sampled 582 specimens (total length, TL, between 70.6 and 593.0 mm) from April 2004 to August 2006 in the Lhasa River, Tibet. We estimated ages based on the counts of alternating opaque and translucent zones (annuli) in thin transverse sections of lapilli otoliths. Ages ranged from 1(+) to 23(+) years for males and 1(+) to 44(+) for females. The observed 44(+) years was the oldest reported for schizothoracine fishes. Females attained a larger size than males. The TL weight relationship was W=7.12 x 10(-6)TL(3.006) for combined sexes. The growth parameters fitted von Bertalanffy growth functions were L-infinity = 598.66 mm, k=0.0898 year(-1), t(0)=-0.7261 year and W-infinity = 1585.38 g for females and L-infinity = 494.23mm, k=0.1197 year(-1), t(0)=-0.7296 year and W-infinity = 904.88g for males. The longevities of 32.7 year for females and 24.3 year for males were similar to the observed ages. Using an empirical model we estimated the instantaneous rate of total mortality (Z) at 0.28 per year in the lower reaches. Z in the upper and middle stocks was close to the M because of unexploited or lightly exploited stock. Protracted longevity, slow growth, low natural mortality and large body size were typical characteristics of P. dipogon. The current declining trend of P. dipogon could be prevented by altering fishing regulations.

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Recently, sonar signals and other sounds produced by cetaceans have been used for acoustic detection of individuals and groups in the wild. However, the detection probability ascertained by concomitant visual survey has not been demonstrated extensively. The finless porpoises (Neophocaena phocaenoides) have narrow band and high-frequency sonar signals, which are distinctive from background noises. Underwater sound monitoring with hydrophones (B&K8103) placed along the sides of a research vessel, concurrent with visual observations was conducted in the Yangtze River from Wuhan to Poyang Lake in 1998 in China. The peak to peak detection threshold was set at 133 dB re 1 mu Pa. With this threshold level, porpoises could be detected reliably within 300 m of the hydrophone. In a total of 774-km cruise, 588 finless porpoises were sighted by visual observation and 44 864 ultrasonic pulses were recorded by the acoustical observation system. The acoustic monitoring system could detect the presence of the finless porpoises 82% of the time. A false alarm in the system occurred with a frequency of 0.9%. The high-frequency acoustical observation is suggested as an effective method for field surveys of small cetaceans, which produce high-frequency sonar signals. (C) 2001 Acoustical Society of America.

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Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.

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High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics.

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We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

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Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

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Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

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Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.