254 resultados para 191-1179B


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A scheme of combining technology of lens array (LA) and smoothing by spectral dispersion (SSD) is introduced to improve the irradiation uniformity in laser fusion based on the earlier works on LA. The feasibility of the scheme is also analyzed by numerical simulation. It shows that a focal pattern with flat-top and sharp-edge profile could be obtained, and the irradiation nonuniformity can fall down from 14% with only LA to 3% with both SSD and LA. And this smoothing scheme is depended less on the incidence comparing to other smoothing methods. The preliminary experiment has demonstrated its effectiveness. (c) 2006 Elsevier B.V. All rights reserved.

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Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.

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The Yb (10%):GGG and Yb (30%): GGG crystals have been grown by the Czochralski method. The chemical compositions are: Yb1.07Gd1.74Ga5.19O12 and Yb0.33Gd1.47Ga5.2O12. The absorption and emission spectra of Yb:GGG crystal at room temperature have been measured. The spectroscopic parameters of Yb:GGG and Yb:YAG have been compared. Optical absorption spectra of Yb:GGG show 4f-4f transitions related to Gd3+ ion around 300 nm, and also an onset of charge transfer (CT) transitions from oxygen ligands to Gd3+ or Yb3+ cations below 240nm. The CT absorption of Yb3+ is largely overlapped by that of Gd3+ ions. (c) 2005 Elsevier B.V. All rights reserved.

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g-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec and etch pits density of (0.3-2.2) x 10(4) cm(-2) throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 mu m and becomes completely absorbing around 6.7 mu m wavelength. The optical absorption edge in near UV region is about 191 nm.

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利用Nd:YAG调Q单脉冲激光和自由脉冲激光对硬膜窄带干涉滤光片进行激光损伤阈值的测试,并且采用表面热透镜技术测量了滤光片的吸收率。实验发现:窄带干涉滤光片的吸收率和激光损伤阈值强烈依赖于辐照激光波长与窄带干涉滤光片通带的相对位置;在调Q单脉冲激光作用下,不同中心波长的滤光片损伤形貌存在明显的差别,而在自由脉冲激光作用下,各滤光片的损伤形貌则趋于相同.均表现为典型的热熔烧蚀破坏。根据实验结果,结合损伤形貌,通过驻波场理论对激光作用下滤光片内电场分布的分析与模拟.探讨了两种激光模式作用下滤光片的损伤特征和损

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为探索园林植物快繁的新方法、新途径,实现工厂化生产园林苗木。本项目自行设计了金字架式、园拱式、半地下式等薄膜繁殖棚,棚内装置有旋转式和直喷式自控雾化系统及架式插床,组成一套植物扦插快繁综合设施。设施具有良好光、温、湿效应和透气性,雾化程度高,使棚内相对湿度控制在90%以上,插床基质含水量10-12%;棚内光照度约1-2万勒克斯;棚内温度,冬春季比棚外高2-3℃,夏季保持28-30℃,适宜植物扦插繁殖。棚内增加架式插床,增加50%繁殖面积,提高单位面积利用系数。供试的67科191种共141142株插条快繁试验,95%以上种类均有出根,出根率79%以上,比常规扦插出根率高50%;一般30-50天可繁殖一批苗,出圃时间比常规提早3-12月;可周年大规模繁殖各种苗木,管理容易,效益较好,是工厂化生产苗木的有效途径。

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